Thin film transistor type optical sensor
View Patent ↗A image detector comprises a light source for radiating light in accordance with a predetermined signal; a window for transmitting the light from the light source; a thin film phototransistor for generating an optical current in accordance with the intensity of external light; a storage capacitor for storing charge information transmitted from the thin film phototransistor; a thin film switching transistor for outputting the information stored in the storage capacitor in accordance with an external control signal; an insulating layer for covering the window, the thin film phototransistor, the storage capacitor, and the thin film switching transistor; a protecting layer formed on the insulating layer; and a conductive object detection pattern formed on the protecting layer to apply an electrical power supply signal to the light source when a conductive living object contacts the conductive objecting detecting pattern.
1. A thin film transistor type optical sensor, comprising:
a light source for radiating light in accordance with a predetermined signal;
a window for transmitting the light radiated by the light source;
a thin film phototransistor for generating an optical current in accordance with an intensity of received light;
a storage capacitor for storing charge information produced by the optical current generated by the thin film phototransistor;
a switching thin film transistor for outputting the information stored in the storage capacitor in accordance with an external control signal;
an insulating layer for covering the window, the thin film phototransistor, the storage capacitor, and the switching thin film transistor;
a protecting layer formed on the insulating layer; and
a living object detection pattern formed on the protecting layer for supplying an electrical power supply signal to the light source when a living object contracts the living object detection pattern.
2. The thin film transistor type optical sensor of claim 1 wherein the conductive object detection pattern is made of a material selected from the group consisting of indium tin oxide, tin oxide and TiOx.
3. The thin film transistor type optical sensor of claim 1 wherein the conductive object detection pattern comprises first and second electrodes spaced apart from each other at a predetermined distance.