Vertical MOS transistor
View Patent ↗A vertical MOS transistor has a high concentration drain region, a low concentration drain region disposed on the high concentration drain region, a body region disposed on the low concentration drain region, a high concentration body contact region disposed on the body region, and a high concentration source region formed on a portion of the body region outside of the high concentration body contact region. A first silicon trench passes through the body region and the high concentration source region and extends into the low concentration drain region. A second silicon trench is disposed in contact with the high concentration body contact region but not in contact with the high concentration source region. A gate insulator film is formed in each of the first and second silicon trenches. High concentration polycrystalline silicon gates are embedded within the respective first and second trenches and are surrounded by the gate insulator film.
1. A vertical MOS transistor comprising:
a first-conductivity type semiconductor substrate forming a high concentration drain region;
a first-conductivity type epitaxial growth layer forming a low concentration drain region disposed on the semiconductor substrate;
a second-conductivity type body region disposed on the epitaxial growth layer;
a second-conductivity type high concentration body contact region disposed on a front surface of a portion of the body region;
a first-conductivity type high concentration source region formed on a region of the front surface of the body region outside of the high concentration body contact region;
a first silicon trench passing completely through the body region and the high concentration source region to a depth that reaches an internal portion of the epitaxial growth layer;
a second silicon trench disposed so that the high concentration body contact region contacts the second silicon trench and the high concentration source region does not contact the second silicon trench;
a gate insulator film formed along a wall surface and a floor surface of each of the first and second silicon trenches; and
high concentration polycrystalline silicon gates embedded within the respective first and second trenches and surrounded by the gate insulator film.
2. A vertical MOS transistor according to claim 1 wherein the first and second silicon trenches have different widths.
3. A vertical MOS transistor according to claim 1 wherein the first and second silicon trenches have different widths and extend to different depths.
4. A vertical MOS transistor according to claim 3 wherein the width and the depth of the second silicon trench are larger than the width and the depth, respectively, of the first silicon trench.
5. A vertical MOS transistor comprising:
a first-conductivity type semiconductor substrate forming a high concentration drain region;
a first-conductivity type epitaxial growth layer forming a low concentration drain region disposed on the semiconductor substrate;
a second-conductivity type body region disposed on the epitaxial growth layer;
a second-conductivity type high concentration body contact region disposed on a front surface of a portion of the body region;
a first-conductivity type high concentration source region formed on a region of the front surface of the body region outside of the high concentration body contact region;
a first silicon trench passing completely through the body region and the high concentration source region to a depth that reaches an internal portion of the type epitaxial growth layer;
a second silicon trench formed at an outermost circumference of a plurality of unit transistor cells arranged planarly and repeatedly, the unit transistor cells comprising the high concentration body contact region and the high concentration source region;
a gate insulator film formed along a wall surface and a floor surface of each of the first and second silicon trenches; and
high concentration polycrystalline silicon gates embedded within the respective first and second trenches and surrounded by the gate insulator film.
6. A vertical MOS transistor according to claim 5 wherein the high concentration body contact region contacts an inner side of the second silicon trench.
7. A vertical MOS transistor according to claim 1 wherein a width of the second silicon trench is larger than a width of the first silicon trench.
8. A vertical MOS transistor according to claim 5 wherein the first and second silicon trenches have different widths.
9. A vertical MOS transistor according to claim 5 wherein a width of the second silicon trench is larger than a width of the first silicon trench.
10. A vertical MOS transistor according to claim 5 wherein the first and second silicon trenches have different widths and extend to different depths.
11. A vertical MOS transistor according to claim 10 wherein the width and the depth of the second silicon trench are larger than the width and the depth, respectively, of the first silicon trench.
12. A vertical MOS transistor comprising:
a first-conductivity type semiconductor substrate forming a high concentration drain region;
a first-conductivity type epitaxial growth layer forming a low concentration drain region disposed on the semiconductor substrate;
a second-conductivity type body region disposed on the epitaxial growth layer;
a second-conductivity type high concentration body contact region disposed on a front surface of a portion of the body region, the high concentration body contact region having a generally rectangular cross-section;
a first-conductivity type high concentration source region surrounding the high concentration body contact region and formed on a region of the front surface of the body region outside of the high concentration body contact region, the high concentration source region having an outer circumference with eight sides including a first group of four sides disposed generally parallel to the high concentration body contact region and a second group of four sides not disposed generally parallel to the high concentration body contact region;
a first silicon trench passing completely through the body region and the high concentration source region to a depth that reaches an internal portion of the epitaxial growth layer, the first silicon trench contacting the first group of four sides of the high concentration source region;
a second silicon trench contacting the second group of four sides of the high concentration source region;
a plurality of unit cells each having an octagonal shape and comprising the high concentration body contact region and the high concentration source region, the unit cells being arranged repeatedly and planarly through the first and second silicon trenches;
a gate insulator film formed along a wall surface and a floor surface of each of the first and second silicon trenches; and
high concentration polycrystalline silicon gates embedded within the respective first and second trenches and surrounded by the gate insulator film.
13. A vertical MOS transistor according to claim 12 wherein a crystalline surface of a trench sidewall of the first silicon trench is a 100 surface, and a crystalline surface of a trench sidewall of the second silicon trench is a 110 surface.
14. A vertical MOS transistor according to claim 12 wherein the first and second silicon trenches have different widths.
15. A vertical MOS transistor according to claim 12 wherein a width of the second silicon trench is larger than a width of the first silicon trench.
16. A vertical MOS transistor according to claim 12 wherein the first and second silicon trenches have different widths and extend to different depths.
17. A vertical MOS transistor according to claim 16 wherein the width and the depth of the second silicon trench are larger than the width and the depth, respectively, of the first silicon trench.
18. A vertical MOS transistor comprising:
a first-conductivity type semiconductor substrate forming a high concentration drain region;
a first-conductivity type epitaxial growth layer forming a low concentration drain region disposed on the semiconductor substrate;
a second-conductivity type body region disposed on the epitaxial growth layer;
a second-conductivity type high concentration body contact region disposed on a front surface of a portion of the body region;
a first-conductivity type high concentration source region formed on a region of the front surface of the body region outside of the high concentration body contact region;
a first silicon trench passing completely through the body region and the high concentration source region to a depth that reaches an internal portion of the epitaxial growth layer, the first silicon trench having a width equal to or greater than 0.8 μm;
a second silicon trench having a width equal to or greater than 1.5 μm;
a gate insulator film formed along a wall surface and a floor surface of each of the first and second silicon trenches; and
high concentration polycrystalline silicon gates embedded within the respective first and second trenches and surrounded by the gate insulator film.
19. A vertical MOS transistor comprising:
a high concentration drain region;
a low concentration drain region disposed on the high concentration drain region;
a body region disposed on the low concentration drain region;
a high concentration body contact region disposed on the body region;
a high concentration source region formed on a portion of the body region outside of the high concentration body contact region;
a first silicon trench passing through the body region and the high concentration source region and extending into the low concentration drain region;
a second silicon trench disposed in contact with the high concentration body contact region but not in contact with the high concentration source region;
a gate insulator film formed in each of the first and second silicon trenches; and
high concentration polycrystalline silicon gates embedded within the respective first and second trenches and surrounded by the gate insulator film.
20. A vertical MOS transistor according to claim 19 wherein each of the high concentration drain region, the low concentration drain region and the high concentration source region is of a first conductivity type; and wherein each of the body region and the body contact region is of a second-conductivity type different from the first-conductivity type.