Chemically amplified resist composition, process for manufacturing semiconductor device and patterning process
View Patent ↗An objective of this invention is to prevent resist poisoning and sensitivity deterioration in a chemically amplified resist. The chemically amplified resist comprises a base resin, a photoacid generator and a salt exhibiting buffer effect in the base resin.
1. A chemically amplified resist composition comprising:
a base resin;
a photoacid generator which generates an acid by exposure; and
a salt exhibiting buffer effect in the base resin, wherein said salt exhibiting buffer effect generates an acid-base pair in a resist composition without neutralizing the acid generated by the photoacid generator and behaves as if it is a buffer.
2. The chemically amplified resist composition as claimed in claim 1 , wherein the salt comprises an anion of the acid generated from the photoacid generator by exposure.
3. The chemically amplified resist composition as claimed in claim 1 , wherein the salt is a sulfonate.
4. The chemically amplified resist composition as claimed in claim 1 , wherein the salt is an amine salt.
5. The chemically amplified resist composition as claimed in claim 1 , wherein the salt is a salt of an alkanolamine or alkoxyalkylamine with a sulfonic acid.
6. The chemically amplified resist composition as claimed in claim 1 , wherein the base resin is a resin whose alkali solubility is changed by the action of the acid.
7. The chemically amplified resist composition as claimed in claim 1 , wherein the salt exhibiting buffer effect is not decomposed by light irradiation.