CMOS transistor with dual high-k gate dielectric and method of manufacture thereof
View Patent ↗A CMOS device with transistors having different gate dielectric materials and a method of manufacture thereof. A CMOS device is formed on a workpiece having a first region and a second region. A first gate dielectric material is deposited over the second region. A first gate material is deposited over the first gate dielectric material. A second gate dielectric material comprising a different material than the first gate dielectric material is deposited over the first region of the workpiece. A second gate material is deposited over the second gate dielectric material. The first gate material, the first gate dielectric material, the second gate material, and the second gate dielectric material are then patterned to form a CMOS device having a symmetric V t for the PMOS and NMOS FETs.
1. A CMOS semiconductor device comprising:
a PMOS transistor formed in a first region of a workpiece, the PMOS transistor comprising:
a first source and a first drain disposed in the workpiece,
a first channel region disposed between the first source and the first drain,
a first gate dielectric consisting essentially of Al 2 O 3 , the first gate dielectric disposed over the first channel region, and
a first gate disposed over and abutting the first gate dielectric, the first gate comprising a polysilicon material; and
a NMOS transistor formed in a second region of the workpiece, the NMOS transistor comprising
a second source and a second drain disposed in the workpiece,
a second channel region disposed between the second source and the second drain,
a second gate dielectric consisting essentially of HfSiO x , the second gate dielectric disposed over the second channel region, and
a second gate disposed over and abutting the second gate dielectric, the second gate comprising a polysilicon material
wherein the PMOS transistor and the NMOS transistor comprise symmetric threshold voltages.