Image sensor and manufacturing method thereof
View Patent ↗An image sensor has a three-dimensional structure in which a sensor element array having a plurality of sensor elements consisting of CdTe, arranged in a two-dimensional matrix, is mounted to an IC substrate via a connection layer. The connection layer has a plurality of stud bumps and a plurality of thin film layers. The stud bumps are formed on an electrode of each IC and are provided in the connection layer in order to fetch a signal detected by each sensor element. The thin film layers are formed at the distal end of each stud bump, and are electrically connected with an electrode of each sensor element.
1. A method of manufacturing an image sensor comprising:
forming a stud bump on each electrode pad of the predetermined number of IC chips provided in a first substrate, the stud bump on each electrode pad including two or more bumps laminated together;
carrying out indium plating with respect to a second substrate;
transferring said plated indium to said second substrate to the distal end of each of said stud bump so that a plurality of thin film layers can be formed;
connecting each of said thin film layers with the electrode of each of sensor elements so that a sensor element array having the plurality of said sensor elements arrayed like two-dimensional matrix is mounted to each of IC chips of said first substrate by flip chip mounting; and
injecting an insulating resin between said first substrate and said sensor element array, and thereafter, hardening said insulating resin.
2. The method of manufacturing said image sensor, according to claim 1 , wherein each of said stud bump is made of gold, and each of said thin film layers is made of indium.
3. The method of manufacturing said image sensor, according to claim 1 , wherein said sensor element is CdTe element.
4. The method of manufacturing said image sensor, according to claim 1 , wherein each of the two or more bumps laminated has a projection-shape.