Linearity semi-conductive pressure sensor
View Patent ↗A pressure sensor system involves a semi-conductive diaphragm electrode overlying a cavity in a semiconductor chip, with the center of the diaphragm secured to a mesa extending upwardly from the cavity. A second electrode is implemented by a heavily doped raised ring between the mesa and the periphery of the chip at the ring of maximum deflection of the diaphragm. The raised ring electrode is heavily doped with one polarity, with light doping near the base of the raised area, and the remainder of the cavity is heavily doped with the opposite polarity. The plot of Linearity Error versus width of the ring electrode, has a minimum, and the width of the ring electrode and related constructional features are selected to conform to the minimum point of the linearity function. The reference capacitor is arcuate in configuration and extends part way around and in immediate proximity to the sensor diaphragm.
1. A pressure sensor system comprising:
a semiconductor chip;
a diaphragm constituting a first electrode, formed on said chip; said diaphragm being formed of semi-conductive material; said diaphragm facing a cavity in said chip with a second electrode in the form of a doped semiconductor raised area facing said diaphragm; said first and second electrodes constituting a sensing capacitor with a capacitance that varies with deflection of said diaphragm;
a reference capacitor formed on the surface of said chip in an arcuate configuration adjacent said diaphragm, said reference capacitor having a capacitance in the same order of magnitude as said sensing capacitor;
said cavity having a raised mesa secured to the center of said diaphragm;
said second electrode being substantially in the form of a raised ring extending around said mesa, and with said raised ring located between said mesa and the periphery of the diaphragm;
said semiconductor chip having a p-n junction substantially at the base of the raised ring forming the second electrode;
circuitry formed on said chip for converting capacitance variations of said diaphragm relative to said reference capacitor, to a substantially linear output with changes in pressure applied to said diaphragm; and
bonding pads mounted on said chip to receive leads for coupling to external circuitry.
2. A pressure sensor system as defined in claim 1 wherein said capacitance of said reference capacitor is substantially equal to that of the variable sensing capacitor.
3. A pressure sensor system as defined in claim 1 wherein the dimensions of said raised ring and the doping thereof are selected to conform to the minimum of the function of output signal linearity error versus the width of the ring electrode.
4. A pressure sensor system as defined in claim 1 wherein the ring shaped electrode is heavily doped with one semi-conductive polarity at the surface thereof facing the diaphragm, and has lesser doping concentration toward the base of the ring, and the remainder of the cavity is doped with the opposite semi-conductive polarity.
5. A pressure sensor system as defined in claim 1 wherein said reference capacitor extends around said diaphragm for substantially equal to or less than half way around said diaphragm.
6. A pressure sensor system comprising:
a semiconductor chip;
a diaphragm formed on said chip; said diaphragm constituting a first electrode formed of semi-conductive material; said diaphragm facing a cavity in said chip with a second electrode in the form of a doped semiconductor raised area facing said diaphragm; said first and second electrodes constituting a sensing capacitor with a capacitance that varies with deflection of said diaphragm;
a reference capacitor formed on the surface of said chip in an arcuate configuration adjacent said diaphragm;
circuitry formed on said chip for converting capacitance variations of said diaphragm relative to said reference capacitor, to a substantially linear output with changes in pressure applied to said diaphragm; and
bonding pads also mounted on said chip to receive leads for coupling to external circuitry.
7. A pressure sensor system as defined in claim 6 wherein said capacitance of said reference capacitor is substantially equal to that of the variable sensing capacitor.
8. A pressure sensor system as defined in claim 6 wherein the dimensions of said second electrode and the doping thereof provide a capacitance selected to minimize the linearity error in output voltage versus pressure applied to deflect said diaphragm.
9. A pressure sensor system as defined in claim 5 wherein the second electrode is heavily doped with one semi-conductive polarity at the surface thereof facing the diaphragm, and has a lesser doping concentration of the same polarity toward the base of the second electrode, and the remainder of the cavity is doped with the opposite semi-conductive polarity.
10. A pressure sensor system comprising:
a semiconductor chip;
a diaphragm constituting a first electrode, formed on said chip; said diaphragm being formed of semi-conductive material; said diaphragm facing a cavity in said chip with a second electrode in the form of a doped semiconductor raised area facing said diaphragm; said first and second electrodes constituting a sensing capacitor with a capacitance that varies with deflection of said diaphragm; and
a reference capacitor formed on the surface of said chip in an arcuate configuration adjacent said diaphragm, said reference capacitor having a capacitance in the same order of magnitude as said sensing capacitor.
11. A pressure sensor system as defined in claim 10 wherein said capacitance of said reference capacitor is substantially equal to that of the variable sensing capacitor.
12. A pressure sensor system as defined in claim 10 wherein the dimensions of said raised ring and the doping thereof are selected to conform to the minimum of the function of output signal linearity error versus the width of the ring electrode.
13. A pressure sensor system as defined in claim 10 wherein said reference capacitor extends around said diaphragm for substantially equal to or less than half way around said diaphragm.
14. A pressure sensor system comprising:
a semiconductor chip;
a diaphragm formed on said chip; said diaphragm constituting a first electrode formed of semi-conductive material; said diaphragm facing a cavity in said chip with a second electrode in the form of a doped semiconductor raised area facing said diaphragm;
said first and second electrodes constituting a sensing capacitor with a capacitance that varies with deflection of said diaphragm;
a reference capacitor formed on the surface of said chip in an arcuate configuration adjacent said diaphragm; and
the second electrode being heavily doped with one semi-conductive polarity at the surface thereof facing the diaphragm, and having lesser doping concentration toward the base of the second electrode and the remainder of the cavity being doped with the opposite semi-conductive polarity.
15. A pressure sensor system as defined in claim 14 wherein said capacitance of said reference capacitor is substantially equal to that of the variable sensing capacitor.
16. A pressure sensor system as defined in claim 14 wherein the dimensions of said raised ring and the doping thereof are selected to conform to the minimum of the function of output signal linearity error versus the width of the ring electrode.
17. A pressure sensor system as defined in claim 14 further comprising a raised mesa secured to the center of said diaphragm.
18. A pressure sensitive system as defined in claim 14 wherein the second electrode is in the form of a ring.
19. A pressure sensor system comprising:
a semiconductor chip;
a diaphragm constituting a first electrode, formed on said chip; said diaphragm being formed of semi-conductive material; said diaphragm facing a cavity in said chip with a second electrode in the form of a doped semiconductor area facing said diaphragm; said first and second electrodes constituting a sensing capacitor with a capacitance that varies with deflection of said diaphragm;
a reference capacitor formed on the surface of said chip;
said cavity having a raised mesa secured to the center of said diaphragm;
said second electrode being substantially in the form of a ring extending around said mesa, and with said electrode being located between said mesa and the periphery of the diaphragm; and
said electrode being heavily doped with one semi-conductive polarity, and the remainder of said cavity being doped with the opposite semi-conductive polarity.
20. A pressure sensor system as defined in claim 19 wherein the dimensions of said second electrode and the doping thereof are selected to conform to the minimum of the function of the output signal linearity error versus the width of the second electrode.
21. A pressure sensor system comprising:
a semiconductor chip;
a diaphragm constituting a first electrode, formed on said chip; said diaphragm being formed of semi-conductive material; said diaphragm facing a cavity in said chip with a second electrode in the form of a doped semiconductor area facing said diaphragm; said first and second electrodes constituting a sensing capacitor with a capacitance that varies with deflection of said diaphragm;
a reference capacitor formed on the surface of said chip;
said second electrode being heavily doped with one semi-conductive polarity, and the remainder of said cavity being doped with the opposite semi-conductive polarity; and
the dimensions of said second electrode and the doping thereof are selected to conform to the minimum of the function of the output signal linearity error versus the area of the second electrode.