Isolation trench geometry for image sensors
View Patent ↗A pixel cell including a substrate having a top surface. A photo-conversion device is at a surface of the substrate and a trench is in the substrate adjacent the photo-conversion device. The trench has sidewalls and a bottom. At least one sidewall is angled less than approximately 85 degrees from the plane of the top surface of the substrate.
1. A pixel cell comprising:
a substrate having a top surface;
a photo-conversion device; and
a trench formed in the substrate adjacent the photo-conversion device, the trench having sidewalls, at least one sidewall on the side of the photo-conversion device being angled less than 85 degrees from a plane of a top surface of the substrate and at least a second sidewall being angled greater than or equal to 85 degrees with respect to the plane.
2. The pixel cell of claim 1 , wherein the trench is formed to a depth of approximately 500 Å to approximately 5000 Å.
3. The pixel cell of claim 2 , wherein the trench is formed to a depth of approximately 1000 Å to approximately 3000 Å.
4. The pixel cell of claim 1 , wherein the at least one angled sidewall has an angle within the range of approximately 15 degrees to approximately 70 degrees.
5. The pixel cell of claim 1 , wherein the at least one angled sidewall has an angle within the range of approximately 60 degrees to approximately 70 degrees.
6. The pixel cell of claim 1 , further comprising a doped well of a first conductivity type formed in the substrate surrounding the trench.
7. The pixel cell of claim 6 , wherein the photo-conversion device is a pinned photodiode comprising a doped surface layer of a first conductivity type.
8. The pixel cell of claim 7 , wherein the doped surface layer is connected to the doped well.
9. The pixel cell of claim 1 , wherein the photo-conversion device is a p-n type photodiode.
10. The pixel cell of claim 1 , wherein the photo-conversion device is a photoconductor.
11. The pixel cell of claim 1 , wherein the photo-conversion device is a photogate.
12. The pixel cell of claim 1 , wherein the trench is at least partially filled with a dielectric material.
13. The pixel cell of claim 1 , wherein the trench is lined with nitride.
14. The pixel cell of claim 13 , wherein the trench is lined with oxide.
15. The pixel cell of claim 14 , wherein the trench is filled with a dielectric material and the nitride liner is between the dielectric material and the oxide liner.
16. The pixel cell of claim 1 , wherein the trench is at least partially filled with a material selected from the group consisting of a silicon oxide, a nitride, silicon carbide, a high temperature polymer, and a high density plasma.
17. The pixel cell of claim 1 , wherein the pixel cell is part of a CMOS image sensor.
18. The pixel cell of claim 1 , wherein the pixel cell is part of a charge coupled device image sensor.
19. A pixel cell comprising:
a substrate having a top surface;
a photo-conversion device; and
a trench formed in the substrate adjacent to the photo-conversion device, the trench having sidewalls and being lined with a nitride liner, a sidewall being angled from a plane of a top surface of the substrate at a respective angle within the range of approximately 60 degrees to approximately 70 degrees and at least a second sidewall being angled greater than or equal to approximately 85 degrees with respect to the plane.
20. A pixel cell comprising:
a substrate having a top surface;
a pinned photodiode having a doped surface layer of a first conductivity type;
a trench formed in the substrate adjacent the pinned photodiode, the trench having sidewalls, at least one sidewall angled from a plane of a top surface of the substrate at a respective angle within the range of approximately 15 degrees to approximately 70 degrees and at least a second sidewall being angled greater than or equal to approximately 85 degrees with respect to the plane; and a doped well of the first conductivity type formed in the substrate surrounding the trench and being connected to the doped surface layer.
21. An image sensor comprising:
a substrate having a top surface; and
an array of pixel cells, at least one pixel cell comprising:
a photo-conversion device at a surface of the substrate; and
a trench formed in the substrate adjacent to the photo-conversion device, the trench having sidewalls, at least one sidewall on a side of the photo-conversion device being angled less than 85 degrees from a plane of a top surface of the substrate and at least a second sidewall being angled greater than or equal to 85 degrees with respect to the plane.
22. The image sensor of claim 21 , wherein the trench is formed to a depth of approximately 500 Å to approximately 5000 Å.
23. The image sensor of claim 22 , wherein the trench is formed to a depth of approximately 1000 Å to approximately 3000 Å.
24. The image sensor of claim 21 , wherein the at least one angled sidewall has an angle within the range of approximately 15 degrees to approximately 70 degrees with respect to the plane.
25. The image sensor of claim 21 , wherein the at least one angled sidewall has an angle within the range of approximately 60 degrees to approximately 70 degrees with respect to the plane.
26. The image sensor of claim 21 , further comprising a doped well of a first conductivity type formed in the substrate surrounding the trench.
27. The image sensor of claim 26 , wherein the photo-conversion device is a pinned photodiode comprising a doped surface layer of a first conductivity type.
28. The image sensor of claim 27 , wherein the doped surface layer is connected to the doped well.
29. The image sensor of claim 21 , wherein the photo-conversion device is a p-n type photodiode.
30. The image sensor of claim 21 , wherein the photo-conversion device is a photoconductor.
31. The image sensor of claim 21 , wherein the photo-conversion device is a photogate.
32. The image sensor of claim 21 , wherein the trench is lined with nitride.
33. The image sensor of claim 32 , wherein the trench is lined with oxide.
34. The image sensor of claim 33 , wherein the trench is filled with a dielectric material and the nitride liner is between the dielectric material and the oxide liner.
35. The image sensor of claim 21 , wherein the trench is at least partially filled with a dielectric material.
36. The image sensor of claim 21 , wherein the image sensor is a CMOS image sensor.
37. The image sensor of claim 21 , wherein the image sensor is a charge coupled device image sensor.
38. The pixel cell of claim 27 , further comprising forming a nitride layer inside the trench.
39. The pixel cell of claim 38 , further comprising forming an oxide layer inside the trench.
40. The pixel cell of claim 39 , further comprising filling the trench with a dielectric material, and wherein the act of forming the nitride liner comprises forming the nitride layer between the oxide layer and the dielectric material.
41. A pixel cell comprising:
a substrate having a top surface;
a photo-conversion device; and
a trench formed in the substrate adjacent the photo-conversion device, the trench having sidewalls, at least one sidewall being angled less than 85 degrees from a plane of a top surface of the substrate and at least a second sidewall being angled greater than or equal to 85 degrees with respect to the plane.