Method of fabricating liquid crystal display device

1. A method of fabricating a liquid crystal display (LCD) device, comprising:

preparing a substrate having a plurality of LCD panel regions within each of a plurality of main exposure regions;

forming a photoresist layer on the substrate;

performing a main exposure process at the LCD panel regions to define a non-exposure region of the photoresist layer between the main exposure regions and exposed regions of the photoresist layer within the main exposure regions; and

performing a sub exposure process at the non-exposure region of the photoresist layer between the main exposure portions.

2. The method of claim 1 , wherein the sub exposure process is performed by an edge exposing device having a mask.

3. The method of claim 2 , wherein the mask includes a plurality of slits.

4. The method of claim 2 , wherein the sub exposure process includes forming a photoresist pattern of a mask pattern at the non-exposure region.

5. The method of claim 4 , wherein the mask pattern is shaped as a stripe.

6. A method of fabricating an LCD device, comprising:

preparing a substrate having a plurality of LCD panel regions within each of a plurality of main exposure regions;

forming a metal layer on the substrate;

forming a photoresist layer on the metal layer;

performing a main exposure process on the photoresist layer to define a non-exposure region of the photoresist layer between the main exposure regions;

performing a sub exposure process at the non-exposure region of the photoresist layer using an edge exposing device where a mask having a predetermined pattern is mounted;

using the photoresist layer to etch the metal layer to form a gate electrode and to form a patterned metal layer in the non-exposure region;

forming an active layer on the gate electrode;

forming source and drain electrodes on the active layer;

forming a passivation layer on the source and drain electrodes; and

forming a pixel electrode on the passivation layer.

7. The method of claim 6 , wherein the sub exposure process includes forming a photoresist pattern of the mask pattern at the non-exposure region.

8. The method of claim 6 , wherein forming the active layer includes:

forming an amorphous silicon layer and a high impurity layer on the substrate;

forming a photoresist on the high impurity layer;

performing the main exposure process at the LCD panel regions;

performing the sub exposure process at the non-exposure region formed between the main exposure regions; and

developing the photoresist to form an active layer.

9. The method of claim 6 , wherein forming the source and drain electrodes comprises:

forming a conductive layer on the substrate;

forming a photoresist on the conductive layer;

performing the main exposure process at the LCD panel regions;

performing the sub exposure process at the non-exposure region formed between main exposure regions; and

developing the photoresist to form source and drain electrodes.

10. The method of claim 6 , wherein the sub exposure process includes forming a pattern of a concavo-concave shape at the non-exposure region.

11. The method of claim 10 , wherein the concavo-concave pattern is a stripe type.