Coated article with ion treated underlayer and corresponding method
View Patent ↗A coated article is provided that may be used as a vehicle windshield, insulating glass (IG) window unit, or the like. Ion beam treatment is performed on a layer(s) of the coating. For example, a silicon nitride layer of a low-E coating may be ion beam treated. It has been found that ion beam treatment, for example, of a silicon nitride underlayer is advantageous in that sodium migration from the glass substrate toward the IR reflecting layer(s) can be reduced during heat treatment.
1. A method of making a coated article, the method comprising:
providing a glass substrate;
forming a layer comprising silicon nitride via sputtering on the substrate;
after said sputtering, ion beam treating the layer comprising silicon nitride in a manner so as to cause at least part of the layer comprising silicon nitride to comprise nitrogen-doped Si 3 N 4 , and wherein said ion beam treating is performed using nitrogen gas and an ion energy of from about 600-1100 eV per N 2 + ion and to cause stress of the layer comprising silicon nitride to change from tensile stress to compressive stress due to the ion beam treating; and
forming an infrared (IR) reflecting layer comprising silver on the substrate over at least the ion beam treated layer comprising silicon nitride.
2. The method of claim 1 , wherein said ion beam treating causes the layer comprising silicon nitride to realize an average hardness of at least 20 GPa.
3. The method of claim 1 , wherein said ion beam treating causes the layer comprising silicon nitride to realize an average hardness of at least 22 GPa.
4. The method of claim 1 , wherein said ion beam treating causes the layer comprising silicon nitride to realize an average hardness of at least 24 GPa.
5. The method of claim 1 , further comprising forming at least one layer comprising zinc oxide between the layer comprising silicon nitride and the IR reflecting layer.
6. The method of claim 1 , further comprising sputtering another layer on the substrate so as to be located between the glass substrate and the layer comprising silicon nitride.
7. The method of claim 1 , further comprising forming at least a layer comprising NiCr on the substrate over at least the IR reflecting layer.
8. The method of claim 1 , wherein said ion beam treating causes the layer comprising silicon nitride to include Si 3 N 4 doped with at least 2% nitrogen.
9. The method of claim 1 , wherein the layer comprising silicon nitride following said ion beam treating has compressive stress of from 50 MPa to 2 GPa.
10. The method of claim 1 , further comprising heat treating the coated article in a manner sufficient for at least one of tempering and heat bending, so that following said heat treating the coated article has a visible transmission of at least 70% and a sheet resistance (R s ) of no greater than 5.5 ohms/square.
11. The method of claim 1 , further comprising heat treating the coated article in a manner sufficient for at least one of tempering and heat bending, so that following said heat treating the coated article has a visible transmission of at least 75% and a sheet resistance (R s ) of no greater than 2.5 ohms/square.
12. The method of claim 1 , wherein prior to any optional heat treating, the coated article in monolithic form has a visible transmission of at least 70% and a sheet resistance (R s ) of no greater than 6.0 ohms/square.
13. The method of claim 1 , further comprising forming a layer comprising zinc oxide on the glass substrate over at least the IR reflecting layer, thereafter forming an overcoat layer comprising silicon nitride on the glass substrate, and ion beam treating the overcoat layer comprising silicon nitride.
14. The method of claim 1 , wherein the layer comprising silicon nitride further comprises from about 1-10% aluminum, and wherein said ion beam treating comprises ion beam treating the layer comprising silicon nitride after the layer comprising silicon nitride has been formed by only sputtering.
15. The method of claim 1 , wherein said ion beam treating causes at least part of the layer comprising silicon nitride to include Si 3 N 4 doped with from about 0.5 to 20% nitrogen.
16. The method of claim 1 , wherein said ion beam treating causes the layer comprising silicon nitride to include Si 3 N 4 doped with from about 2 to 10% nitrogen.
17. The method of claim 1 , wherein the ion beam treated layer comprising silicon nitride is in direct contact with the glass substrate.