IP Library › Granted Patent US 7,112,476
Granted Patent B2
US 7,112,476 · App. 10/876,629 · Granted Sep 26, 2006

Polycrystalline silicon liquid crystal display device and fabrication method thereof

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Quick Facts
Patent No.
US 7,112,476
App. No.
10/876,629
Granted
Sep 26, 2006
Kind
B2
Abstract

A method for fabricating a poly-silicon liquid crystal display device includes forming a poly-silicon layer including a TFT region and a storage capacitor region on a substrate, wherein the capacitor region includes an impurity injection region having a N-type impurity injection region and a P-type impurity injection region; forming a gate electrode and a storage capacitor electrode on the poly-silicon layer; injecting an N-type impurity ion with a high doping density into the N-type impurity injection region and the TFT region; injecting a P-type impurity ion with a high doping density into the P-type impurity injection region; forming an insulating layer on the gate electrode and the storage electrode; and forming a pixel electrode on the insulating layer, wherein the pixel electrode is electrically connected to the impurity injection region in the storage capacitor region. Because the number of masks used for forming the storage capacitor is reduced, the fabricating process of a poly-silicon liquid crystal display device can be simplified.

Claims (17)

1. A method for fabricating a poly-silicon liquid crystal display (LCD) device comprising:

forming a poly-silicon layer including a TFT region and a storage capacitor region on a substrate, wherein the capacitor region includes an impurity injection region having a N-type impurity injection region and a P-type impurity injection region;

forming a gate electrode and a storage capacitor electrode on the poly-silicon layer,

injecting an N-type impurity ion with a high doping density into the N-type impurity injection region and the TFT region;

injecting a P-type impurity ion with a high doping density into the P-type impurity injection region;

forming an insulating layer on the gate electrode and the storage electrode; and

forming a pixel electrode on the insulating layer, wherein the pixel electrode is electrically connected to the impurity injection region in the storage capacitor region.

2. The method of claim 1 , injecting a P-type impurity ion with a high doping density into the P-type impurity injection region further includes blocking the N-type impurity injection region and the TFT region.

3. The method of claim 1 , injecting a N-type impurity ion with a high doping density into the N-type impurity injection region further includes blocking the P-type impurity injection region and the channel region of the TFT region.

4. The method of claim 2 , wherein a photosensitive film is used in blocking.

5. The method of claim 3 , wherein a photosensitive film is used in blocking.

6. The method of claim 1 , wherein forming a poly-silicon layer further includes:

forming an amorphous silicon layer on the substrate;

crystallizing the amorphous silicon layer; and

patterning the crystallized silicon layer.

7. The method of claim 1 , further comprising injecting an N-type impurity with a low doping density in the impurity injection region.

8. The method of claim 1 , further comprising forming a conductive layer on the insulating layer, the conductive layer is used as a conduit to electrically connect the pixel electrode to the impurity injection region.