Method of fabricating liquid crystal display device

1. A method of fabricating a liquid crystal display device, comprising:

forming a first active layer on a substrate;

forming a first gate insulating film on the first active layer;

forming a first gate electrode on the first gate insulating film;

forming a first interlayer insulating layer on the first gate electrode;

forming a pixel electrode on the first interlayer insulating layer;

forming at least one insulating film to cover the pixel electrode;

forming a first plurality of contact holes in the first interlayer insulating layer and the at least one insulating film, the first plurality of contact holes including a first source contact hole to expose a first source area of the first active layer and a first drain contact hole to expose a first drain area of the first active layer;

forming a pixel contact hole in the at least one insulating film to expose the pixel electrode;

performing a hydrogenating treatment to the substrate including the first source contact hole and first source area, the first drain contact hole and the first drain area, and the pixel contact hole and the pixel electrode; and

forming a first source electrode contacting the first source area of the first active layer, and a first drain electrode contacting the direct drain area of the first active layer and connected to the pixel electrode.

2. The method according to claim 1 , wherein the step of forming the at least one insulating film includes:

forming a second interlayer insulating layer on the first interlayer insulating layer to cover the pixel electrode; and

forming a passivation film on the second interlayer insulating layer.

3. The method of claim 2 , wherein the step of forming the first source contact hole to expose the first source area of the first active layer, the first drain contact hole to expose the first drain area of the first active layer, and the pixel contact hole to expose the pixel electrode includes:

forming the first source contact hole and the first drain contact hole passing through the first gate insulating film, the first interlayer insulating layer, the second interlayer insulating layer and the passivation film; and

forming the pixel contact hole passing through the second interlayer insulating layer and the passivation film.

4. The method according to claim 1 , wherein the first gate insulating film, the first interlayer insulating layer, and the insulating film layer include etchant reactable silicon oxide SiO x .

5. The method according to claim 4 , wherein the first gate insulating film, the first interlayer insulating layer, and the insulating film are wet-etched by an etchant having one of buffereal oxide etchant BOB and hydrogen fluoride HF.

6. The method according to claim 1 , wherein the first gate insulating film, the first interlayer insulating layer, and the insulating film include etching gas reactable silicon oxide SiO x .

7. The method according to claim 1 , further comprising:

forming a second active layer on the substrate;

forming a second gate electrode on the first gate insulating film over the second active layer;

forming a second plurality of contact holes in the first interlayer insulating layer and the at least one insulating film, the second plurality of contact holes including a second source contact hole to expose a second source area of the second active layer and a second drain contact hole to expose a second drain area of the second active layer;

forming a second source electrode and a second drain electrode on the at least one insulating film, the second source electrode connected to the second source area of the second active layer through the second source contact hole and the second drain electrode connected to the second drain area of the second active layer through the second drain contact hole,

wherein the second plurality of contact holes are disposed within a driving circuit part of the liquid crystal display device for generating driving signals to drive liquid crystal cells disposed within an image display part of the liquid crystal display device.

8. The method according to claim 7 , further comprising:

injecting a first impurity into the first active layer using the first gate electrode as a mask; and

injecting a second impurity into the second active layer using the second gate electrode as a mask.

9. The method according to claim 7 , wherein the forming the first and second pluralities of contact holes is performed simultaneously.

10. The method according to claim 1 , further comprising forming a storage capacitor on the first gate insulating film, the storage capacitor including a storage electrode formed simultaneously with the first gate electrode and the pixel electrode formed to overlap the storage electrode with the first interlayer insulating layer therebetween.

11. A method of fabricating a liquid crystal display device, comprising:

forming a plurality of active layers on a substrate;

forming a gate insulating film on each of the plurality of active layers;

forming a plurality of gate electrodes on the gate insulating film, each of the plurality of gate electrodes corresponds with each of the plurality of active layers;

forming an interlayer insulating layer on the plurality of gate electrodes;

forming a pixel electrode on the interlayer insulating layer;

forming at least one insulating film to cover the pixel electrode;

forming a plurality of contact holes in the interlayer insulating layer and the at least one insulating film, each of the plurality of contact holes exposing portions of each of the plurality of active layers and the pixel electrode;

performing a hydrogenating treatment to the substrate including the plurality of contact holes and the exposed portions of each of the plurality of active layers and the pixel electrode;

forming a plurality of electrodes contacting each of the exposed portions of each of the plurality of active layers through the plurality of contact holes,

wherein at least one of the plurality of electrodes electrically interconnects one of the exposed portions of the plurality of active layers with the pixel electrode.