IP Library Granted Patent US 7,714,820
Granted Patent B2
US 7,714,820 · App. 10/877,388 · Granted May 11, 2010

Contact structure of conductive films and thin film transistor array panel including the same

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Quick Facts
Patent No.
US 7,714,820
App. No.
10/877,388
Granted
May 11, 2010
Kind
B2
Abstract

A thin film transistor array panel is provided, which includes: a display cell array circuit including a plurality of gate lines, a plurality of data lines, a plurality of thin film transistors, and a plurality of pixel electrodes; a gate driving circuit supplying gate signals to the gate lines; and a signal line connected to the gate driving circuit and including first and second line segments separated from each other and a connection member connected to the first and second line segments through at least a contact hole exposing at least one of the first and the second line segments.

Claims (45)

1. A thin film transistor array panel, comprising:

a display cell array circuit including a plurality of gate lines, a plurality of data lines, a plurality of thin film transistors, and a plurality of pixel electrodes;

a gate driving circuit supplying gate signals to the gate lines; and

a signal line connected to the gate driving circuit and including first and second line segments separated from each other;

a first insulating layer formed on the first line segment, the second line segment being formed on the first insulating layer;

a second insulating layer formed on the second line segment; and

a connection member formed on the second insulating layer and connected to the first and second line segments through at least a contact hole exposing at least one of the first and the second line segments,

wherein the contact hole has a toothed or sinuous boundary.

2. The thin film transistor array panel of claim 1 , wherein the at least a contact hole includes a first contact hole extending though the first insulating layer and the second insulating layer and exposing the first line segment at least in part.

3. The thin film transistor array panel of claim 2 , wherein the first contact hole exposes an edge of the first line segment.

4. The thin film transistor array panel of claim 3 , wherein the exposed edge of the first line segment is a toothed edge.

5. The thin film transistor array panel of claim 2 , wherein the first line segment includes a lower film and an upper film on the lower film.

6. The thin film transistor array panel of claim 5 , wherein the upper film includes Al, Al alloy, Ag or Ag alloy and the lower film includes Cr, Mo, Ti or Ta.

7. The thin film transistor array panel of claim 6 , wherein the first contact hole exposes the lower film of the first line segment.

8. The thin film transistor array panel of claim 2 , further comprising:

a second contact hole provided in the second insulating layer and exposing the second line segment at least in part.

9. The thin film transistor array panel of claim 1 , wherein the first line segment includes the same layer as the gate lines and the second line segment includes the same layer as the data lines.

10. The thin film transistor array panel of claim 1 , wherein the connection member includes the same layer as the pixel electrodes.

11. The thin film transistor array panel of claim 1 , wherein the gate driving circuit comprises a shift register including a plurality of stages connected in sequence and the signal line transmits to the gate driving circuit one of a plurality of clock signals having phase shifts, and a voltage.

12. The thin film transistor array panel of claim 1 , further comprising a data driving circuit supplying data signals to the data lines.

13. A thin film transistor array panel, comprising:

a display cell array circuit including a plurality of gate lines, a plurality of data lines, a plurality of thin film transistors, and a plurality of pixel electrodes;

a gate driving circuit supplying gate signals to the gate lines; and

a signal line connected to the gate driving circuit and including first and second line segments separated from each other;

a first insulating layer formed on the first line segment, the second line segment being formed on the first insulating layer;

a second insulating layer formed on the second line segment; and

a connection member formed on the second insulating layer and connected to the first and second line segments through at least a contact hole exposing at least one of the first and the second line segments,

wherein at least portions of edges of the first and the second line segments are toothed and engage with each other.

14. The thin film transistor array panel of claim 13 , wherein the at least a contact hole includes a first contact hole exposing the first line segment at least in part.

15. The thin film transistor array panel of claim 14 , wherein the first contact hole exposes an edge of the first line segment.

16. The thin film transistor array panel of claim 14 , wherein the first contact hole further exposes the second line segment at least in part.

17. The thin film transistor array panel of claim 14 , wherein the at least a contact hole further includes a second contact hole exposing the second line segment at least in part.

18. The thin film transistor array panel of claim 13 , wherein the first line segment includes the same layer as the gate lines and the second line segment includes the same layer as the data lines.

19. The thin film transistor array panel of claim 13 , wherein the connection member includes the same layer as the pixel electrodes.

20. A contact structure of conductive films, the contact structure comprising:

first and second conductive layers;

a first insulating layer formed on the first conductive layer, the second conductive layer being formed on the first insulating layer;

a second insulating layer formed on the second conductive layer;

a contact hole exposing a portion of the first conductive layer and a portion of the second conductive layer; and

a connection member formed on the second insulating layer and connected to the first conductive layer and the second conductive layer through the contact hole,

wherein at least a portion of an edge of at least one of the contact hole, the first conductive layer and the second conductive layer is serpentine, toothed or sinuous.

21. The contact structure of claim 20 , wherein the contact hole exposes an edge of the first conductive layer.

22. The contact structure of claim 21 , wherein the exposed edge of the first conductive layer is toothed.

23. The contact structure of claim 20 , wherein the first and the second conductive layers have toothed edges engaging with each other.

24. The contact structure of claim 21 , wherein the contact hole further exposes the second conductive layer at least in part.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 20, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 028991/0922 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 25, 2004
From: PARK, MYUNG-JAE; KONG, HYANG-SHIK; HUR, MYUNG-KOO; CHANG, JONG-WOONG; LEE, SEONG-YOUNG; KIM, DONG-GYU
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 015526/0305 →