Liquid crystal display device and fabrication method thereof

1. A fabrication method of a liquid crystal display device, comprising:

providing a substrate;

forming a storage electrode extending from a storage line wherein the storage electrode is formed directly on the substrate;

forming an active pattern on the substrate;

forming a first insulating layer on the substrate;

forming a gate electrode and a pixel electrode on the substrate, wherein the storage electrode constitutes the pixel electrode and a storage capacitor having the first insulating layer interposed therebetween;

forming a second insulating layer provided with contact holes on the substrate;

forming source and drain electrodes respectively connected to a source region and a drain region through the contact hole; and

removing a conductive layer remaining on the pixel electrode.

2. The method of claim 1 , wherein the active pattern is formed of a silicon thin film.

3. The method of claim 2 , wherein the silicon thin film is a crystallized silicon thin film.

4. The method of claim 1 , further comprising forming the storage electrode at a pixel region with the same material as the active pattern at the time of forming the active pattern.

5. The method of claim 1 , further comprising a step of forming the source region and the drain region by injecting impurity ions into a predetermined region of the active pattern using the gate electrode as a mask after forming the gate electrode.

6. The method of claim 5 , wherein the impurity ion belongs to a fifth group such as P.

7. The method of claim 5 , wherein the impurity ion belongs to a third group such as B.

8. The method of claim 1 , wherein a part of the source electrode is extended and connects to a data line.

9. The method of claim 1 , wherein a part of the drain electrode is extended towards a pixel region and electrically connects to the pixel electrode.

10. A fabrication method of a liquid crystal display device, comprising:

providing a substrate;

forming an active pattern on the substrate;

forming a first insulating layer on the substrate;

forming a gate electrode and a pixel electrode on the substrate;

forming a second insulating layer provided with contact holes on the substrate; and

forming source and drain electrodes respectively connected to a source region and a drain region through the contact hole; wherein forming the gate electrode and the pixel electrode comprises:

sequentially forming a first conductive metal layer and a second conductive metal layer on the substrate;

patterning the second and first conductive metal layers and thereby forming a gate electrode pattern and a pixel electrode pattern;

forming a second insulating layer on the substrate;

partially removing the second insulating layer and the first insulating layer to form a contact hole that partially exposes the source region and the drain region, and removing the second insulating layer on the pixel electrode pattern; and

removing the second conductive metal pattern remaining on the pixel electrode pattern.

11. The method of claim 10 , wherein the first conductive metal layer or the second conductive metal layer is made of a transparent conductive material selected from indium-tin-oxide and indium-zinc-oxide.

12. The method of claim 10 , wherein the second conductive metal layer is an opaque conductive material such as Al, Al alloy, W, Cu, and Mo.

13. The method of claim 10 , wherein a contact hole mask for forming the contact hole includes a pixel electrode pattern, and the second insulating layer on the pixel electrode pattern is removed using the mask.