Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument
A semiconductor device includes: a semiconductor substrate in which an integrated circuit is formed; an interconnect layer which includes a linear section and a land section connected with the linear section; and an underlayer disposed under the interconnect layer, and the land section includes a first section which is in contact with the underlayer, and a second section which is not in contact with the underlayer.
1. A semiconductor device comprising:
a semiconductor substrate in which an integrated circuit is farmed, the semiconductor substrate having an electrode;
an interconnect layer which includes a linear section and a land section connected with the linear section; and
an underlayer disposed under the interconnect layer, the underlayer having a portion disposed on the electrode, the underlayer having a first surface and a second surface opposite each other, the second surface facing the semiconductor substrate, the entire first surface being in contact with the interconnect layer,
wherein the land section includes a first section which is in contact with the underlayer, and a second section which is not in contact with the underlayer, the first section being a central portion of the land section, and the second section overhanging a space on the underlayer,
wherein the linear section of the interconnect layer has a portion disposed on the portion of the underlayer disposed on the electrode.
2. The semiconductor device as defined in claim 1 , further comprising: a resin layer formed on the semiconductor substrate,
wherein the land section is formed over the resin layer with the underlayer interposed, and
wherein a space exists between the second section of the land section and the resin layer.
3. The semiconductor device as defined in claim 2 , further comprising:
an insulating layer which covers the linear section and includes an opening which exposes a part of the land section,
wherein the space between the resin layer and the second section of the land section is filled with the insulating layer.
4. The semiconductor device as defined in claim 1 , further comprising an insulating layer which covers the linear section and includes an opening which exposes a part of the land section.
5. The semiconductor device as defined in claim 4 , wherein a width of the first section of the land section is smaller than a width of the part of the land section exposed from the insulating layer.
6. The semiconductor device as defined in claim 1 , the second section is positioned at an end portion of the land.
7. The semiconductor device as defined in claim 1 , wherein a planar shape of the first section of the land section is formed to be longer in a direction in which the linear section extends.
8. The semiconductor device as defined in claim 1 , wherein the underlayer is formed under only the land section.
9. The semiconductor device as defined in claim 1 , wherein the underlayer is formed under the linear section and the land section.
10. The semiconductor device as defined in claim 1 , wherein a thickness of the underlayer is greater than, a thickness of the interconnect layer.
11. The semiconductor device as defined in claim 1 , further comprising an external terminal formed on the land section.
12. A circuit board on which the semiconductor device as defined in claim 1 is mounted.
13. An electronic instrument having the semiconductor device as defined in claim 1 .