Transistor in semiconductor devices and method of fabricating the same
View Patent ↗Disclosed are a transistor in the semiconductor device and method of fabricating the same. A gate oxide film is formed using a nitrification oxide film in a low voltage device region and a gate oxide film is formed to have a stack structure of a nitrification oxide film/oxide film/nitrification oxide film in a high voltage device region. An electrical thickness by an increased dielectric constant could be reduced even when a physical thickness of the gate oxide film is increased. The leakage current and diffusion and infiltration of a dopant into the gate oxide film or the channel region could be prevented. Furthermore, an electrical characteristic of the device could be improved by reducing the leakage current.
1. A transistor in a semiconductor device, comprising:
a first gate insulator formed of a first nitrification oxide film on a low voltage device region of a semiconductor substrate;
a first gate electrode formed on the first gate insulator;
a second gate insulator formed of a second nitrification oxide film, an oxide film and a third nitrification oxide film on a high voltage device region of the semiconductor substrate, wherein the first gate insulator and the third nitrification oxide film have a dielectric constant of 3 to 6.5;
a second gate electrode formed on the second gate insulator; and
sources and drains formed in the semiconductor substrate at both corners of the first and second gate electrode.
2. The transistor as claimed in claim 1 , wherein the concentration of nitrogen in the first nitrification oxide film is 10 ˜15%.
3. The transistor as claimed in claim 1 , wherein the concentration of nitrogen in the second nitrification oxide film or the third nitrification oxide film is 0.1 ˜3%.
4. The transistor as claimed in claim 1 , wherein a thickness of the first nitrification oxide film is 12 Ř20 Å and a sum total thickness of the oxide film, the second nitrification oxide film and the third nitrification oxide film is 35 Ř55 Å.
5. The transistor as claimed in claim 1 , wherein a plurality of silicide layers are formed on the first gate electrode and the second gate electrode.
6. The transistor as claimed in claim 5 , wherein the silicide layers are formed on the semiconductor substrate and adjacent to said sources and drains thereby decreasing contact resistance of the first and second gate electrodes and the sources and drains.
7. The transistor as claimed in claim 5 , wherein the silicide layers are cobalt silicide layers.
8. The transistor as claimed in claim 5 , wherein the silicode layers are cobalt silicide layers.
9. The transistor as claimed in claim 8 , wherein a side wall of the second gate electrode facing the side wall of the second electrode has a spacer including a buffer oxide film and a silicon nitride film.
10. A transistor in a semiconductor device, comprising:
a first gate insulator formed of a first nitrification oxide film on a low voltage device region of a semiconductor substrate;
a first gate electrode formed on the first gate insulator;
a second gate insulator formed on a high voltage device region of the semiconductor substrate, wherein the first gate insulator and a top portion of the second gate insulator have a dielectric constant of 3 to 6.5;
a second gate electrode formed on the second gate insulator; and
sources and drains formed in the semiconductor substrate at both corners of the first and second gate electrode.
11. The transistor as claimed in claim 10 , wherein the second gate insulator includes a second nitrification oxide film, an oxide film and a third nitrification oxide film.
12. The transistor as claimed in claim 10 , wherein a side wall of the second gate electrode has a spacer including a buffer oxide film and a silicon nitride film.
13. The transistor as claimed in claim 10 , wherein a side wall of the first gate electrode facing the side wall of the second gate electrode has a spacer including a buffer oxide film and a silicon nitride film.