Semiconductor laser with side mode suppression
View Patent ↗Systems and methods for stripping an optical mode from a semiconductor laser. A waveguide layer is included in the semiconductor laser and is typically arranged beneath the active region. The waveguide layer is configured to match the phase of the second order mode. The waveguide layer does not substantially match the primary optical mode of the laser. By matching the phase of the second order mode, the confinement of the second order mode is reduced and the second order mode strongly couples with the waveguide layer. The optical confinement of the primary mode is not substantially reduced. The side-mode suppression ratio is thereby improved by stripping the second order mode from the active region.
1. A semiconductor laser for reducing a second order mode, the laser comprising:
a substrate;
an active region arranged over the substrate, wherein the active region includes one or more quantum wells that produce a primary mode and a second order mode; and
a waveguide layer arranged over the substrate and having a thickness wherein a confinement of the second order mode in the active region is reduced by the waveguide layer more than a confinement of the primary mode in the active region so as to suppress the second order mode;
wherein the waveguide layer and the active layer are part of the same epitaxial structure; and
a semiconductor layer between the waveguide layer and the active region, wherein the materials of the active region, the waveguide layer, and the semiconductor layer and the thicknesses of the semiconductor layer and the waveguide layer are selected such that the modal index of waveguide layer for the secondary mode substantially matches the modal index of the active layer for the second order mode and the modal index of the waveguide layer for the fundamental mode does not match the modal index of the active layer for the primary mode such that the second order mode couples into the waveguide layer more than the first order mode.
2. A laser as defined in claim 1 , wherein the waveguide layer has a thickness of about 115 nanometers when a photoluminescence of the active region is about 1300 nanometers.
3. A laser as defined in claim 1 , wherein the waveguide layer is InGaAsP and is lattice matched to InP.
4. A laser as defined in claim 1 , further comprising:
a grating arranged over the active region; and
a ridge arranged over the grating.
5. A laser as defined in claim 1 , wherein the semiconductor layer between the active region and the waveguide layer is an n-type semiconductor layer.
6. A laser as defined in claim 5 , wherein the n-type semiconductor layer has a thickness on the order of 1.3 micrometers.
7. A laser as defined in claim 1 , wherein the waveguide layer comprises multiple layers.
8. A laser as defined in claim 7 , wherein the multiple layers arc distributed Bragg layers.
9. A semiconductor laser with an improved side mode suppression ratio, the semiconductor laser comprising:
a substrate;
an active region arranged over the substrate, the active region including a plurality of quantum wells separated by barrier layers and having a first order mode and a second order mode;
a grating arranged over the active region;
a ridge formed over the grating;
a waveguide layer arranged at least partially between the active region and the substrate and having a thickness, wherein the waveguide layer is separated from the active region by a distance, and wherein the materials of the active region and the waveguide layer, the distance, and the thickness are chosen such that the phase velocity of second order mode in the waveguide layer substantially matches the phase velocity of the second order mode in the active region, and the phase velocity of the first order mode in the active region does not match the phase velocity of the first order mode in the waveguide layer, such that the second order mode couples into the waveguide layer more than the first order mode, thereby suppressing the second order mode of the semiconductor laser;
wherein the waveguide layer and the active layer are part of the same epitaxial structure.
10. A semiconductor laser as defined in claim 9 , wherein the waveguide layer is arranged between the active region and the substrate, the semiconductor laser further comprising:
a second semiconductor layer formed between the active region and the grating.
11. A semiconductor laser as defined in claim 9 , wherein the waveguide layer further comprises distributed Bragg layers.
12. A semiconductor laser as defined in claim 9 , wherein the phase velocity of the waveguide layer is wavelength dependent.
13. A semiconductor laser as defined in claim 9 , wherein the waveguide layer is InGaAsP and is lattice matched to InP.
14. A semiconductor laser as defined in claim 9 , wherein the waveguide layer has a thickness of about 115 nanometers and a photolumineseence peak of about 1200 nanometers.
15. A semiconductor laser as defined in claim 14 , wherein a photoluminescence peak of the active region is about 1300 nanometers.
16. A laser as defined in claim 1 , wherein the laser is an edge emitting laser.
17. A laser as defined in claim 16 , wherein the laser is a DFB or a DBR laser.