IP Library Granted Patent US 7,070,698
Granted Patent B2
US 7,070,698 · App. 10/881,278 · Granted Jul 4, 2006

Methods of fabricating magnetic write heads with side and trailing shield structures

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Quick Facts
Patent No.
US 7,070,698
App. No.
10/881,278
Granted
Jul 4, 2006
Kind
B2
Abstract

One illustrative method of fabricating magnetic write heads includes the acts of forming a pole tip structure at least partially over a magnetic shaping layer; forming non-magnetic materials around and over the pole tip structure; etching side shield voids within the non-magnetic materials adjacent the pole tip structure while leaving non-magnetic materials around the pole tip structure; electroplating side shield materials within the side shield voids; and forming, over the non-magnetic materials above the pole tip structure, trailing shield materials which connect with the side shield materials adjacent the pole tip structure. Preferably, the non-magnetic materials are etched with use of a reactive ion etching (RIE) process. For etching the side shield voids and electroplating the side shield materials, the method may include the additional acts of forming a stop layer over the non-magnetic materials; forming a resist layer over the stop layer; patterning side shield openings through the resist layer; etching the side shield voids in the non-magnetic materials with the patterned resist layer in place; removing the patterned resist layer; electroplating the side shield materials over the non-magnetic materials and within the side shield voids; and performing a chemical-mechanical polishing (CMP) until the stop layer is reached.

Claims (145)

1. A method of fabricating a magnetic head, comprising:

forming a pole tip structure at least partially over a magnetic shaping layer;

forming non-magnetic materials around and over the pole tip structure;

etching side shield voids within the non-magnetic materials adjacent the pole tip structure while leaving non-magnetic materials around the pole tip structure;

electroplating side shield materials within the side shield voids; and

forming, over the side shield materials and the non-magnetic materials above the pole tip structure, trailing shield materials which connect with the side shield materials.

2. The method of claim 1 , wherein the act of etching side shield voids comprises the further acts of:

forming a resist layer over the non-magnetic materials;

patterning and developing side shield openings through the resist layer;

etching, with the patterned resist layer in place, the non-magnetic materials to produce the side shield voids; and

removing the patterned resist layer.

3. The method of claim 1 , wherein the acts of etching side shield voids and electroplating side shield materials within the side shield voids comprise the acts of:

forming one or more resist layers over the non-magnetic materials;

patterning and developing side shield openings through the resist layer;

etching, with the patterned resist layer in place, the non-magnetic materials to produce the side shield voids;

removing the patterned resist layer;

electroplating the side shield materials over the non-magnetic materials and within the side shield voids; and

performing a planarization process over the side shield materials.

4. The method of claim 1 , wherein the acts of etching side shield voids and electroplating side shield materials within the side shield voids comprise the acts of:

forming a stop layer over the non-magnetic materials;

forming one or more resist layers over the stop layer;

patterning and developing side shield openings through the resist layer;

etching, with the patterned resist layer in place, the non-magnetic materials to produce the side shield voids;

removing the patterned resist layer;

electroplating the side shield materials over the non-magnetic materials and within the side shield voids; and

performing a planarization process until the stop layer is reached.

5. The method of claim 1 , wherein the act of etching the side shield voids comprises reactive ion etching (RIE).

6. The method of claim 1 , wherein an aspect ratio of each side shield void is one of 1:1 and 1:1.5.

7. The method of claim 1 , wherein the act of forming the trailing shield materials comprises the further acts of:

forming a resist layer over the non-magnetic and side shield materials;

patterning a trailing shield opening through the resist layer over the non-magnetic materials above the pole tip structure;

etching, with the patterned resist layer in place, the non-magnetic materials to produce a trailing, shield void; and

electroplating the trailing shield materials within the trailing shield void.

8. The method of claim 1 , wherein the non-magnetic materials comprise hard mask materials and wherein the act of etching the side shield voids comprises reactive ion etching (RIE).

9. The method of claim 1 , wherein the acts of forming the pole tip structure and forming the non-magnetic materials around the pole tip structure comprise the further acts of:

forming one or more pole tip structure layers;

forming a stop layer over the pole tip structure;

forming one or more resist layers over the stop layer;

patterning the resist for defining the pole tip structure;

etching, with the patterned resist layer in place, the pole tip structure layer to form the pole tip structure;

depositing the non-magnetic materials with the patterned resist layer in place; and

performing a planarization process until the stop layer is reached.

10. The method of claim 1 , wherein the pole tip structure comprises alternating layers of magnetic and non-magnetic materials.

11. A method of fabricating a magnetic head, comprising:

providing a partially constructed magnetic head having a return pole layer, side studs formed over the return pole layer at an air bearing surface (ABS), and a magnetic shaping layer with a front edge that is recessed behind the ABS;

forming a pole tip structure at least partially over the magnetic shaping layer with a front edge at the ABS;

forming non-magnetic materials around and over the pole tip structure;

etching side shield voids within the non-magnetic materials adjacent the pole tip structure while leaving non-magnetic materials around the pole tip structure;

electroplating side shield materials within the side shield voids over the side studs; and

forming, over the side shield materials and the non-magnetic materials above the pole tip structure, trailing shield materials which connect with the side shield materials.

12. The method of claim 11 , wherein the act of etching side shield voids comprises the further acts of:

forming a resist layer over the non-magnetic materials;

patterning side shield openings through the resist layer;

etching, with the patterned resist layer in place, the non-magnetic materials to produce the side shield voids; and

removing the patterned resist layer.

13. The method of claim 11 , wherein the acts of etching side shield voids and electroplating side shield materials within the side shield voids comprise the acts of:

forming one or more resist layers over the non-magnetic materials;

patterning side shield openings through the resist layer;

etching, with the patterned resist layer in place, the non-magnetic materials to produce the side shield voids;

removing the patterned resist layer;

electroplating the side shield materials over the non-magnetic materials and within the side shield voids; and

performing a planarization process over the side shield materials.

14. The method of claim 11 , wherein an aspect ratio of each side shield void is one of 1:1 and 1:1.5.

15. The method of claim 11 , wherein the act of etching the side shield voids comprises reactive ion etching (RIE) and the non-magnetic materials comprise hard mask materials.

16. The method of claim 11 , wherein the act of forming the trailing shield materials comprises the further acts of:

forming a resist layer over the non-magnetic and side shield materials;

patterning a trailing shield opening through the resist layer over the non-magnetic materials above the pole tip structure;

etching, with the patterned resist layer in place, the non-magnetic materials to produce a trailing shield void; and

electroplating the trailing shield materials within the trailing shield void.

17. The method of claim 11 , wherein the act of forming the pole tip structure comprises the further acts of:

forming one or more pole tip layers;

forming a resist layer over the pole tip layer;

patterning the resist for defining the pole tip structure; and

etching, with the patterned resist layer in place, the pole tip layer to form the pole tip structure.

18. The method of claim 11 , wherein the acts of forming the pole tip structure and forming the non-magnetic materials around the pole tip structure comprise the further acts of:

forming one or more pole tip layers;

forming a stop layer over the pole tip layer;

forming one or more resist layers over the stop layer;

patterning the resist for defining the pole tip structure;

etching, with the patterned resist layer in place, the pole tip layer to form the pole tip structure;

depositing the non-magnetic materials with the patterned resist layer in place; and

performing a planarization process until the stop layer is reached.

19. The method of claim 11 , wherein at least a portion of the non-magnetic materials serve as a write gap layer between the pole tip structure and the trailing shield materials.

20. A method of fabricating a magnetic head, comprising:

forming a pole tip structure at least partially over a magnetic shaping layer;

forming non-magnetic materials around and over the pole tip structure;

forming one or more resist layers over the non-magnetic materials;

patterning and developing side shield openings through the resist layer;

with the patterned resist layer in place: performing a reactive ion etch (RIE) on the non-magnetic materials to produce side shield voids through the non-magnetic materials; and

electroplating side shield materials within the side shield voids of the non-magnetic materials.

21. The method of claim 20 , further comprising:

forming, over the non-magnetic materials above the pole tip structure, trailing shield materials which connect with the side shield materials adjacent the pole tip structure.

22. The method of claim 20 , further comprising:

prior to forming the one or more resist layers, forming a stop layer over the non-magnetic materials; and

performing a planarization process over the side shield materials until the stop layer is reached.

23. The method of claim 20 , wherein the non-magnetic materials include one of Ta, Ta 2 O 5 , SiON X , SiO 2 , Si 3 N 4 , and Ta 3 N 5 .

24. The method of claim 20 , wherein an aspect ratio of each side shield void is one of 1:1 and 1:1.5.

25. The method of claim 20 , wherein the non-magnetic materials comprise hard mask materials.

26. The method of claim 20 , wherein the acts of forming the pole tip structure and forming the non-magnetic materials around the pole tip structure comprise the further acts of:

forming one or more pole tip structure layers;

forming a stop layer over the pole tip structure layer;

forming one or more resist layers over the stop layer;

patterning the resist for defining the pole tip structure;

etching, with the patterned resist layer in place, the pole tip structure layer to form the pole tip structure;

depositing the non-magnetic materials with the patterned resist layer in place; and

performing a planarization process until the stop layer is reached.

27. The method of claim 20 , wherein the acts of forming the pole tip structure and forming the non-magnetic materials around the pole tip structure the comprise the further acts of:

forming a plurality of pole tip layers made of alternating magnetic and non-magnetic materials;

forming a stop layer over the pole tip layers;

forming one or more resist layers over the stop layer;

patterning the resist for defining the pole tip structure;

etching, with the patterned resist layer in place, the pole tip layers to form the pole tip structure;

depositing the non-magnetic materials with the patterned resist layer in place; and

performing a planarization process until the stop layer is reached.

28. The method of claim 20 , wherein the acts of forming the pole tip structure and forming the non-magnetic materials around the pole tip structure the comprise the further acts of:

forming one or more pole tip layers;

forming a stop layer over the pole tip layer;

wherein the stop layer comprises carbon (C);

forming one or more resist layers over the stop layer;

patterning the resist for defining the pole tip structure;

etching, with the patterned resist layer in place, the pole tip layer to form the pole tip structure;

depositing the non-magnetic materials with the patterned resist layer in place; and

performing a planarization process until the stop layer is reached.

29. The method of claim 20 , wherein the acts of forming the pole tip structure and forming the non-magnetic materials around the pole tip structure the comprise the further acts of:

forming one or more pole tip layers;

forming a stop layer over the pole tip layer;

forming one or more resist layers over the stop layer;

patterning the resist for defining the pole tip structure;

etching, with the patterned resist layer in place, the pole tip layer to form the pole tip structure;

depositing the non-magnetic materials with the patterned resist layer in place;

performing a planarization process until the stop layer is reached; and

wherein the planarization process comprises a chemical-mechanical polishing (CMP).

30. The method of claim 20 , further comprising:

forming, over the non-magnetic materials above the pole tip structure, trailing shield materials which connect with the side shield materials adjacent the pole tip structure;

wherein the act of forming the trailing shield materials comprises the further acts of:

forming a resist layer over the non-magnetic and side shield materials;

patterning a trailing shield opening through the resist layer over the non-magnetic materials above the pole tip structure;

etching, with the patterned resist layer in place, the non-magnetic materials to produce a trailing shield void; and

electroplating the trailing shield materials over the non-magnetic materials and within the trailing shield void.

31. A method of forming a trailing shield for a magnetic head, comprising:

forming, over non-magnetic materials above a pole, tip structure, magnetic trailing shield materials which connect with side shield materials adjacent the pole tip structure by:

forming a resist layer over the non-magnetic and side shield materials;

patterning a trailing shield opening through the resist layer over the non-magnetic materials above the pole tip structure;

etching, with the patterned resist layer in place, the non-magnetic materials to produce a trailing shield void; and

electroplating the trailing shield materials over the non-magnetic materials and within the trailing shield void.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2016
From: HGST NETHERLANDS B.V.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 040819/0450 →
CHANGE OF NAME Recorded Oct 25, 2012
From: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
To: HGST NETHERLANDS B.V.
Reel/Frame 029341/0777 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 30, 2004
From: LE, QUANG
To: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
Reel/Frame 015542/0874 →