Storage device

1. A storage device comprising a plurality of storage cells arranged and each having a storage element and an active element comprising a MOS transistor which controls access to said storage element, and in which, by applying a voltage to said storage element, a resistance value of said storage element changes and information is recorded;

wherein when recording operation to change the resistance value of said storage element from a high state to a low state is defined as information writing, and recording operation to change the resistance value of said storage element from a low state to a high state is defined as information erasure;

if when erasing said written information the voltage applied to said storage cell is Ve and a voltage applied to a gate of said active element is Vg, a minimum voltage necessary when erasing said information is Vt, and a drain current flowing in said active element for a voltage V across a source and drain of said active element when said active element is in an ON state is represented by a function {I(Vg,V)}, then

a resistance value R of said storage element after said information has been written satisfies a relation:

R≧Vt/{I ( Vg,Ve−Vt )}.

2. A storage device comprising a plurality of storage cells arranged and each having a storage element and an active element comprising a MOS transistor which controls access to said storage element, and in which, by applying a voltage to said storage element, a resistance value of said storage element changes and information is recorded;

wherein when recording operation to change the resistance value of said storage element from a high state to a low state is defined as information writing, and recording operation to change the resistance value of said storage element from a low state to a high state is defined as information erasure, then;

the resistance value R of said storage element after said information is written satisfies a relation:

R≧1.7 kΩ.

3. A storage device comprising a plurality of storage cells arranged and each having a storage element and an active element comprising a MOS transistor which controls access to said storage element, and in which, by applying a voltage to said storage element, a resistance value of said storage element changes and information is recorded;

wherein when recording operation to change the resistance value of said storage element from a high state to a low state is defined as information writing, and recording operation to change the resistance value of said storage element from a low state to a high state is defined as information erasure;

if when writing said information the voltage applied to said storage cell is Vw (V) and the time over which said voltage is applied to said storage cell is Tw (sec), when erasing said written information the voltage applied to said storage cell is Ve (V), a voltage applied to a gate of said active element is Vg (V) and a minimum voltage necessary when erasing said information is Vt (V), and if with said active element in an ON state, a drain current flowing in said active element for a voltage V across a source and drain of said active element is represented by a function {I(Vg,V)}, then a relation:

10 {−0.275·log(Tw)+3.175−0.15·(Vw)} ≧Vt/{I ( Vg,Ve−Vt )}

 is satisfied.

4. A storage device comprising a plurality of storage cells arranged and each having a storage element and an active element comprising a MOS transistor which controls access to said storage element, and in which, by applying a voltage to said storage element, a resistance value of said storage element changes and information is recorded,

wherein when recording operation to change the resistance value of said storage element from a high state to a low state is defined as information writing, and recording operation to change the resistance value of said storage element from a low state to a high state is defined as information erasure,

if when writing said information the voltage applied to said storage cell is Vw (V) and the time over which said voltage is applied to said storage cell is Tw (sec), then a relation:

10 {−0.275·log(Tw)+3.175−0.15·(Vw)} ≧1700

 is satisfied.

5. A storage device comprising a plurality of storage cells arranged and each having a storage element and an active element comprising a MOS transistor which controls access to said storage element, and in which, by applying a voltage to said storage element a resistance value of said storage element changes and information is recorded, and a load circuit that is used when said information is read from said storage elements is provided; wherein

when recording operation to change the resistance value of said storage element from a high state to a low state is defined as information writing, and recording operation to change the resistance value of said storage element from a low state to a high state is defined as information erasure,

if the resistance value of said storage element after said information has been written is R and the resistance value of said load circuit is Rlo, then a relation:

R+Rlo≦ 250 kΩ.

 is satisfied.

6. A storage device comprising a plurality of storage cells arranged and each having a storage element and an active element comprising a MOS transistor which controls access to said storage element, and in which, by applying a voltage to said storage element, the resistance value of said storage element changes and information is recorded,

wherein when recording operation to change the resistance value of said storage element from a high state to a low state is defined as information writing, and recording operation to change the resistance value of said storage element from a low state to a high state is defined as information erasure,

a resistance R of said storage element after information has been written satisfies a relation:

R≦125 kΩ.

7. A storage device comprising a plurality of storage cells arranged and each having a storage element and an active element comprising a MOS transistor which controls access to said storage element, and in which, by applying a voltage to said storage element, a resistance value of said storage element changes and information is recorded,

wherein when recording operation to change the resistance value of said storage element from a high state to a low state is defined as information writing, and recording operation to change the resistance value of said storage element from a low state to a high state is defined as information erasure,

if when writing said information the voltage applied to said storage cell is Vw (V) and a time over which said voltage is applied to said storage cell is Tw (sec), then a relation:

10 {−0.275·log(Tw)+3.175−0.15·(Vw)} ≦125000

 is satisfied.

8. A storage device comprising a plurality of storage cells arranged and each having a storage element and an active element comprising a MOS transistor which controls access to said storage element, and in which, by applying a voltage to said storage element, the resistance value of said storage element changes and information is recorded,

wherein when recording operation to change the resistance value of said storage element from a high state to a low state is defined as information writing, and recording operation to change the resistance value of said storage element from a low state to a high state is defined as information erasure, when writing said information said voltage applied to said storage cell is higher than a power supply voltage applied to peripheral circuitry, other than said storage cells, not subjected to increases in voltage, or is higher than a standard operating voltage of said active element.

9. The storage device according to claim 8 , wherein

when said information writing is performed, if the voltage applied to said storage cell is Vw, a maximum rated voltage of said active element is Vo 2 , and a drain current flowing in said active element is IVo 2 when said active element is in an ON state and a voltage across a source and drain of said active element is Vo 2 ,

then a resistance R of said storage element after said information writing is performed satisfies a relation:

R≧ ( Vw−Vo 2 )/ IVo 2 .

10. The storage device according to claim 9 , wherein

a gate length of said active element of said storage cell is longer than a gate length of active elements other than in said storage cells.

11. The storage device according to claim 8 , wherein

when said information writing is performed, if the voltage applied to said storage cell is Vw, a standard operating voltage of said active element is Vo 3 , and a drain current flowing in said active element is IVo 3 when said active element is in an ON state and a voltage across a source and drain of said active element is Vo 3 ,

then a resistance R of said storage element after said information writing is performed satisfies a relation:

R≧ ( Vw−Vo 3 )/ IVo 3 .

12. The storage device according to claim 8 , wherein

when said information writing is performed, if a time of application of said voltage to said storage cell is Tw (sec), a voltage applied to said storage cell is Vw (V), a maximum rated voltage of said active element is Vo 2 (V), and a drain current flowing in said active element when said active element is in an ON state and a voltage across a source and drain of said active element is Vo 2 (V) is IVo 2 (A), then a relation:

10 {−0.275·log(Tw)+3.175−0.15·(Vw)} ≧( Vw−Vo 2 )/ IVo 2

 is satisfied.

13. The storage device according to claim 12 , wherein

a gate length of said active element of said storage cell is longer than a gate length of active elements other than in said storage cells.

14. The storage device according to claim 8 , wherein

when said information writing is performed, if a time of application of said voltage to said storage cell is Tw (sec), a voltage applied to said storage cell is Vw (V), a standard operating voltage of said active element is Vo 3 (V), and a drain current flowing in said active element, when said active element is in an ON state and a voltage across a source and drain of said active element is Vo 3 (V), is IVo 3 (A), then a relation:

10 {−0.275·log(Tw)+3.175−0.15·(Vw)} ≧( Vw−Vo 3 )/ IVo 3

 is satisfied.