Semiconductor device using a conductive film and method of manufacturing the same
View Patent ↗A semiconductor device has a capacitive element including a first conductive film formed on the bottom and wall surfaces of an opening formed in an insulating film on a substrate, a dielectric film formed on the first conductive film, and a second conductive film formed on the dielectric film. The dielectric film of the capacitive element is crystallized. The first and second conductive films are made of a polycrystal of an oxide, a nitride or an oxynitride of a noble metal.
1. A semiconductor device comprising a capacitive element including a first conductive film formed on the bottom and wall surfaces of an opening formed in an insulating film on a substrate, a dielectric film formed on the first conductive film, and a second conductive film formed on the dielectric film,
wherein the dielectric film of the capacitive element is crystallized,
each of the first and second conductive films is made of a polycrystal of an oxide, a nitride or an oxynitride of a noble metal, and
the size of grains constituting the polycrystal of at least one of the first and second conductive films is one-third or less of the thickness of the conductive film.
2. The semiconductor device of claim 1 , wherein at least one of the first and second conductive films includes a refractory metal.
3. The semiconductor device of claim 1 , further comprising an adhesion layer for enhancing the adhesion of the first conductive film to the insulating film between the insulating film and the first conductive film.
4. The semiconductor device of claim 3 , wherein the adhesion layer is made of a conductive material hardly oxidized by a process for improving the quality of the dielectric film.
5. A semiconductor device comprising a capacitive element including a first conductive film formed on the bottom and wall surfaces of an opening formed in an insulating film on a substrate, a dielectric film formed on the first conductive film, and a second conductive film formed on the dielectric film,
wherein the dielectric film of the capacitive element is crystallized,
each of the first and second conductive films is made of a polycrystal of an oxide, a nitride or an oxynitride of a noble metal,
at least one of the first and second conductive films includes a refractory metal, and
the percentage of the refractory metal present in the first or second conductive film is between 0.5 weight % and 30 weight % both inclusive.
6. A semiconductor device comprising a capacitive element including a first conductive film formed on the bottom and wall surfaces of an opening formed in an insulating film on a substrate, a dielectric film formed on the first conductive film, and a second conductive film formed on the dielectric film,
wherein the dielectric film of the capacitive element is crystallized,
at least the first conductive film is made of a polycrystal of an oxide, a nitride or an oxynitride of a noble metal, and
the noble metal includes iridium as its main ingredient.
7. The semiconductor device of claim 1 , wherein the dielectric film is a ferroelectric film of a perovskite oxide.
8. A semiconductor device comprising:
a first conductive film formed in the form of an island on an insulating film on a substrate or formed on an insulating film of an uneven shape in cross section and along its uneven shape;
a dielectric film formed on the first conductive film; and
a second conductive film formed on the dielectric film,
wherein the first and second conductive films are made of an oxide, a nitride or an oxynitride of a noble metal,
at least one of the first and second conductive films contains a refractory metal, and
the noble metal includes iridium as its main ingredient.
9. The semiconductor device of claim 8 , further comprising
an adhesion layer for enhancing the adhesion of the first conductive film to the insulating film between the insulating film and the first conductive film.
10. The semiconductor device of claim 9 , wherein
the adhesion layer is made of a conductive material hardly oxidized by a process for improving the quality of the dielectric film.
11. The semiconductor device of claim 8 , wherein
the percentage of the refractory metal present in the first or second conductive film is between 0.5 weight % and 30 weight % both inclusive.
12. The semiconductor device of claim 8 , wherein
the dielectric film is a ferroelectric film of a perovskite oxide.
13. The semiconductor device of claim 5 or 6 , wherein the size of grains constituting the polycrystal of at least one of the first and second conductive films is one-third or less of the thickness of the conductive film.
14. The semiconductor device of claim 6 , wherein at least one of the first and second conductive films includes a refractory metal.
15. The semiconductor device of claim 5 or 6 , further comprising an adhesion layer for enhancing the adhesion of the first conductive film to the insulating film between the insulating film and the first conductive film.
16. The semiconductor device of claim 15 , wherein the adhesion layer is made of a conductive material hardly oxidized by a process for improving the quality of the dielectric film.
17. The semiconductor device of claim 5 , wherein the noble metal includes iridium as its main ingredient.
18. The semiconductor device of claim 5 or 6 , wherein the dielectric film is a ferroelectric film of a perovskite oxide.
19. The semiconductor device of claim 8 ,
wherein each of the first and second conductive films is made of a polycrystal, and
the size of grains constituting the polycrystal of at least one of the first and second conductive films is one-third or less of the thickness of the conductive film.
20. The semiconductor device of claim 1 , 5 , 6 , or 8 ,
wherein a film thickness ratio between the thinnest and thickest parts of at least one of the first and second conductive films is 0.8 through 1.0.
21. The semiconductor device of claim 1 , 5 , or 6 , wherein an aspect ratio of the opening is 2 or less.
22. The semiconductor device of claim 1 , 5 , 6 , or 8 , further comprising an oxygen barrier film formed under the first conductive film.
23. The semiconductor device of claim 22 , wherein the oxygen barrier film consists of at least two of titanium aluminum nitride, titanium aluminum oxynitride, titanium nitride, iridium oxide, iridium, ruthenium oxide, or ruthenium.
24. The semiconductor device of claims 1 , 5 , 6 , or 8 , wherein the dielectric film consists of a barium strontium titanate, lead zirconium titanate, lead lanthanum zirconium titanate, strontium bismuth titanate, or bismuth lanthanum titanate.