Method of manufacturing semiconductor device
View Patent ↗The present invention provides a method of manufacturing semiconductor device. The method includes providing a semiconductor wafer having a main surface; defining a chip forming region which includes chip regions defined by scribe lines, and a peripheral region which surrounds the chip forming region, on the main surface; forming circuit elements and electrode pads connected to the circuit elements on the chip areas; forming an insulating film, which exposes respective portions of the electrode pads, on the main surface; forming protruded electrodes on the insulating film provided in the chip areas so that the protruded electrodes are arranged at predetermined intervals in the chip area; forming an encapsulating material, which exposes top faces of the protruded electrodes, on the insulating film; and cutting the semiconductor wafer along the scribe lines.
1. A method of manufacturing a semiconductor device, comprising:
(a) setting a semiconductor chip forming area, which includes semiconductor chip areas partitioned by scribe lines, and a peripheral area, which surrounds the semiconductor chip forming area, to a main surface of a semiconductor wafer;
(b) forming circuit elements, and circuit element connecting pads connected to the circuit elements, in the semiconductor chip areas;
(c) forming an insulating film, which exposes respective portions of the circuit element connecting pads, on the main surface;
(d) forming protruded electrodes over the insulating film provided on the semiconductor chip areas so that the protruded electrodes are arranged at equal intervals over the semiconductor chip forming area;
(e) forming an encapsulating portion, which exposes top faces of the protruded electrodes, on the insulating film; and
(f) cutting the semiconductor wafer along the scribe lines.
2. A method according to claim 1 , further comprising forming wirings which extend from the circuit element connecting pads to the protruded electrodes after said step (C).
3. A method of manufacturing a semiconductor device, comprising:
(a) setting a semiconductor chip forming area, which includes semiconductor chip areas partitioned by scribe lines, and a peripheral area, which surrounds the semiconductor chip forming area, to a main surface of a semiconductor wafer;
(b) forming circuit elements and circuit element connecting pads connected to the circuit elements in the semiconductor chip areas;
(c) forming an insulating film, which exposes respective portions of the circuit element connecting pads, on the main surface;
(d) forming protruded electrodes and dummy protruded electrodes over the insulating film provided on the semiconductor chip areas and the peripheral area so that the protruded electrodes and dummy protruded electrodes are arranged at equal intervals over the main surface of the semiconductor wafer;
(e) forming an encapsulating portion, which exposes top faces of the protruded electrodes, on the insulating film; and
(f) cutting the semiconductor wafer along the scribe lines.
4. A method according to claim 3 , further comprising forming wirings which extend from the circuit element connecting pads to the protruded electrodes after said step (c).
5. A method of manufacturing a semiconductor devices, comprising:
(a) providing a semiconductor wafer having a main surface;
(b) defining a chip forming region which includes chip regions defined by scribe lines, and a peripheral regions which surrounds the chip forming region, on the main surface;
(c) forming circuit elements and electrode pads connected to the circuit elements on the chip areas;
(d) forming an insulating film, which exposes respective portions of the electrode pads, on the main surface;
(e) forming protruded electrodes over the insulating film provided in the chip areas so that the protruded electrodes are arranged at equal intervals over the chip area;
(f) forming an encapsulating material, which exposes top faces of the protruded electrodes, on the insulating film; and
(g) cutting the semiconductor wafer along the scribe lines.
6. A method according to claim 5 , further comprising forming wirings which extend from the electrode pads to the protruded electrodes after said step (d).
7. A method of manufacturing a semiconductor device, comprising:
(a) providing a semiconductor wafer having a main surface;
(b) defining a chip forming region, which includes chip areas defined by scribe lines, and a peripheral region, which surrounds the chip forming region, to the main surface;
(c) forming circuit elements and circuit electrode pads connected to the circuit elements on the chip areas;
(d) forming an insulating film, which exposes respective portions of the electrode pads, on the main surface;
(e) forming protruded electrodes and dummy protruded electrodes over the insulating film provided on the chip regions and the peripheral region so that the protruded electrodes and dummy protruded electrodes are arranged at equal intervals over the main surface;
(f) forming an encapsulating material, which exposes top faces of the protruded electrodes and dummy protruded electrodes, on the insulating film; and
(g) cutting the semiconductor wafer along the scribe lines.
8. A method according to claim 7 , further comprising forming wirings which extend from the electrode pads to the protruded electrodes after said step (d).