Thin film electrode for high-quality GaN optical devices
View Patent ↗A thin film electrode for ohmic contact of a p-type GaN semiconductor includes first and second electrode layers sequentially stacked on a p-type GaN layer. The first electrode layer may include an Ni-based alloy, a Cu-based alloy, a Co-based alloy, or a solid solution capable of forming a p-type thermo-electronic oxide or may include a Ni-oxide doped with at least one selected from Al, Ga, and In. The second electrode layer may include at least one selected from the group consisting of Au, Pd, Pt, Ru, Re, Sc, Mg, Zn, V, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Ca, Na, Sb, Li, In, Sn, Al, Ni, Cu, and Co. Furthermore, a method of fabricating the thin film electrode is provided.
1. A thin film electrode for ohmic contact of a p-type GaN semiconductor, comprising:
a first electrode layer stacked on a p-type GaN layer, the first electrode layer including one selected from the group consisting of an Ni-based alloy or solid solution (Ni—X), a Co-based alloy or solid solution (Co—X), and a nickel oxide doped with at least one selected from the group consisting of Al, Ga, and In, wherein the first electrode layer is a p-type thermo-electronic oxide; and
a second electrode layer stacked on the first electrode layer, the second electrode layer including at least one selected from the group consisting of Au, Pd, Pt, Ru, Re, Sc, Mg, Zn, V, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Ca, Na, Sb, Li, In, Sn, Al, Ni, Cu, and Co,
wherein the Ni-based alloy or solid solution (Ni—X) uses Ni as a base element and the X element comprises one selected from the group consisting of Na, Ca, K, Cs, Sr, and Ba.
2. The thin film electrode for ohmic contact of a p-type GaN semiconductor of claim 1 , wherein the additive rate of the X element is 1˜99 atomic %.
3. The thin film electrode for ohmic contact of a p-type GaN semiconductor of claim 1 , wherein thicknesses of the first and second electrode layers are 1˜10,000 Å and 1˜50,000 Å, respectively.
4. The thin film electrode for ohmic contact of a p-type GaN semiconductor of claim 1 , further comprising a pure metal layer formed between the p-type GaN layer and the first electrode layer, the pure metal layer including at least one selected from the group consisting of Ni, Au, Pd, Pt, Rh, Re, Ru, and Ir, and being adapted to transmit light.
5. The thin film electrode for ohmic contact of a p-type GaN semiconductor of claim 4 , wherein the thickness of the pure metal layer is 1˜1,000 Å.
6. The thin film electrode for ohmic contact of a p-type GaN semiconductor of claim 1 , wherein the p-type GaN layer is formed of Al x In y Ga z N (where 0<x, y, z<1 and x+y+z=1).
7. The thin film electrode for ohmic contact of a p-type GaN semiconductor of claim 4 , wherein the p-type GaN layer is formed of Al x In y Ga z N (where 0<x, y, z<1 and x+y+z=1).
8. The thin film electrode for ohmic contact of a p-type GaN semiconductor of claim 1 , wherein the second electrode layer includes at least one selected from the group consisting of Pd, Ru, Re, Sc, Mg, Zn, V, Hf, Ta, Rh, Ir, W, Ti, Cr, Mo, Nb, Ca, Na, Sb, Li, In, Sn, Al, Ni, Cu, and Co.
9. A thin film electrode for ohmic contact of a p-type GaN semiconductor, comprising:
a first electrode layer stacked on a p-type GaN layer, the first electrode layer including one selected from the group consisting of an Ni-based alloy or solid solution (Ni—X), a Cu-based alloy or solid solution (Cu—X), a Co-based alloy or solid solution (Co—X), and a nickel oxide doped with at least one selected from the group consisting of Al, Ga, and In, wherein the first electrode layer is a p-type thermo-electronic oxide;
a pure metal layer formed between the p-type GaN layer and the first electrode layer, the pure metal layer including at least one selected from the group consisting of Ni, Au, Pd, Pt, Rh, Re, Ru, and Ir, and being adapted to transmit light; and
a second electrode layer stacked on the first electrode layer, the second electrode layer including at least one selected from the group consisting of Au, Pd, Pt, Ru, Re, Sc, Mg, Zn, V, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Ca, Na, Sb, Li, In, Sn, Al, Ni, Cu, and Co,
wherein the Ni-based alloy or solid solution (Ni—X) uses Ni as a base element and the X element comprises one selected from the group consisting of Na, Ca, K, and the X element comprises one selected from the group consisting of Na, Ca, K, Cs, Sr, and Ba,
wherein the Cu-based alloy or solid solution (Cu—X) uses Cu as a base element and the X element comprises at least one selected from the group consisting of Group I elements, Group II elements, Group III elements on the periodic table of the elements, as well as Zn, Pd, Rh, Re, Pt, Ru, Ir, Zr, and Ti.
10. The thin film electrode for ohmic contact of a p-type GaN semiconductor of claim 9 , wherein the additive rate of the X element is 1˜99 atomic %.
11. The thin film electrode for ohmic contact of a p-type GaN semiconductor of claim 9 , wherein thicknesses of the first and second electrode layers are 1˜10,000 Å and 1˜50,000 Å, respectively.
12. The thin film electrode for ohmic contact of a p-type GaN semiconductor of claim 9 , wherein the thickness of the pure metal layer is 1˜1,000 Å.
13. The thin film electrode for ohmic contact of a p-type GaN semiconductor of claim 9 , wherein the p-type GaN layer is formed of Al x In y Ga z N (where 0<x, y, z<1 and x+y+z=1).