Power switching circuit with active clamp disconnect for load dump protection
View Patent ↗A power switching circuit supplying electrical power to a load comprising a power MOSFET semiconductor switch having a gate electrode and two main current carrying electrodes and a back biased body zener diode, an active clamp for clamping a voltage between one of the main current carrying electrodes provided with a supply voltage and the gate electrode at a first specified voltage when the supply voltage increases beyond a predetermined voltage; and a circuit for disconnecting the active clamp when the supply voltage increases a predetermined amount above the predetermined voltage, allowing the body zener diode to avalanche at a second specified voltage that is greater than the first specified voltage thereby to clamp the voltage across the power semiconductor switch.
1. A power switching circuit supplying electrical power to a load comprising:
a power MOSFET semiconductor switch having a gate electrode and two main current carrying electrodes and a back biased body zener diode;
an active clamp for clamping a voltage between one of the main current carrying electrodes provided with a supply voltage and the gate electrode at a first specified voltage when the supply voltage increases beyond a predetermined voltage; and
a circuit for disconnecting the active clamp when the supply voltage increases a predetermined amount above the predetermined voltage, allowing the body zener diode to avalanche at a second specified voltage that is greater than the first specified voltage thereby to clamp the voltage across the power semiconductor switch.
2. The power switching circuit of claim 1 , wherein the circuit for disconnecting the active clamp comprises:
a transistor connected in series with the active clamp having a control electrode;
a series circuit comprising a resistor and a first zener diode, the resistor and first zener diode being connected across the supply voltage; and
the control electrode of the transistor being connected to a common connection of the first zener diode and resistor, such that at the predetermined amount above the predetermined voltage, the transistor is turned off, thereby disconnecting the active clamp from providing a clamped voltage to the power semiconductor switch.
3. The power switching circuit of claim 2 , wherein the active clamp comprises a second zener diode.
4. The power switching circuit of claim 3 , wherein the active clamp further comprises a second transistor coupled as an emitter-follower to the second zener diode for providing a clamped voltage to the gate electrode of the power semiconductor switch with respect to the supply voltage.
5. A method of protecting a power semiconductor switching circuit against load dumps on a supply voltage to a power semiconductor MOSFET switch of the power semiconductor switching circuit, the method comprising:
providing a power MOSFET semiconductor switch having a gate electrode and two main current carrying electrodes and a back biased body zener diode;
clamping a voltage between one of the main current carrying electrodes provided with a supply voltage and the gate electrode at a first specified voltage when the supply voltage increases beyond a predetermined voltage; and
disconnecting the active clamp when the supply voltage increases a predetermined amount above the predetermined voltage, allowing the body zener diode to avalanche at a second specified voltage that is greater than the first specified voltage to clamp the voltage across the power semiconductor switch.