Etchant and array substrate having copper lines etched by the etchant
View Patent ↗An etchant includes hydrogen peroxide (H 2 O 2 ), and a mixed solution including at least one of an organic acid, an inorganic acid, and a neutral salt.
1. An etchant, comprising:
a first concentration of hydrogen peroxide (H 2 O 2 ) for oxidizing Mo and Cu;
a second concentration of sulfuric acid (H 2 SO 4 ) for reacting with the oxidized Cu; and
a hydrogen peroxide (H 2 O 2 ) stabilizer,
wherein respective amounts of the first and second concentrations are such that the etchant is capable of simultaneously etching a double-layered metal layer, which includes a copper (Cu) layer on a molybdenum (Mo) layer, to form a double-layered metal line having the molybdenum layer extending outwardly from underneath an edge of the copper layer,
wherein the sulfuric acid (H 2 SO 4 ) has a weight percent of 5 wt %, and
wherein a molar ratio of hydrogen peroxide (H 2 O 2 ) to sulfuric acid (H 2 SO 4 ) is between 1 and 3.
2. The etchant of claim 1 , wherein the first and second concentrations are such that the etchant is capable of etching about 300 to about 2000 Angstroms of Mo per minute.
3. The etchant of claim 1 , wherein the first and second concentrations are such that the etchant is capable of etching about 1000 Angstroms of Cu in about 2 to about 17 seconds.
4. The etchant of claim 3 , wherein the first and second concentrations are such that the etchant is capable of etching about 300 to about 2000 Angstroms of Mo per minute.