Coated article with improved barrier layer structure and method of making the same
View Patent ↗A coated article, and a corresponding method of making the same are provided. The coated article includes a coating supported by a substrate, the coating including a thin metal or metal nitride contact layer (e.g., NiCr, Ni, Cr, CrN x or NiCrN x ) located directly between and contacting an infrared (IR) reflecting layer (e.g., Ag) and an oxide barrier layer (e.g., NiCrO x ).
1. A method of making a coated article, the method comprising:
providing a glass substrate;
depositing a first layer so as to be supported by the substrate;
depositing a layer comprising silver on the substrate over at least the first layer;
depositing, using a first sputtering target, a metal inclusive contact layer on the substrate directly over and in contact with the layer comprising silver;
depositing, using a second sputtering target, a layer comprising an oxide of NiCr on the substrate directly over and in contact with the metal inclusive contact layer; and
depositing at least one additional layer on the substrate over the layer comprising an oxide of NiCr.
2. The method of claim 1 , wherein said metal inclusive contact layer is either metallic or a metal nitride.
3. The method of claim 1 , wherein said metal inclusive contact layer comprises nickel.
4. The method of claim 1 , wherein each of said first and second sputtering targets comprise nickel.
5. The method of claim 1 , wherein said first layer comprises silicon nitride.
6. The method of claim 1 , wherein said layer comprising an oxide of NiCr is more metallic at a first location closer to said metal inclusive contact layer than at a second location further from said metal inclusive contact layer.
7. The method of claim 1 , wherein said metal inclusive contact layer is less oxidized than is said layer comprising an oxide of NiCr.
8. The method of claim 1 , further comprising heat treating the coated article.
9. The method of claim 1 , wherein said contact layer comprises a metal nitride.