Semiconductor integrated circuit

1. A semiconductor integrated circuit, comprising:

a memory that includes a plurality of memory banks, the memory being accessed by specifying access addresses, the access addresses including bank addresses, X addresses in each bank and Y addresses in each bank;

a self-tester which tests the memory in response to a test enable signal, control signals and address signals and generates test control codes for the memory and the access addresses, the address signals corresponding to the access addresses;

wherein the self-tester comprises

a test controller which receives the test enable signal, the control signals and the address signals, and generates select signals as test sequence commands that instruct test sequences, and

a plurality of test sequencers each of which corresponds to each of the test sequences, and is selected in response to the select signals, and

wherein the test sequences differ in a manner of scanning at least one of the X addresses, the Y addresses, and the bank addresses.

2. The semiconductor integrated circuit according to claim 1 ,

wherein the test sequences are selected from single bank X scanning that updates the bank addresses after one round of the X addresses, single bank Y scanning that updates the bank addresses after one round of the Y addresses, and multi-bank X scanning that updates the X addresses after one round of the bank addresses.

3. The semiconductor integrated circuit according to claim 1 ,

wherein the memory banks have plural dynamic memory cells arrayed in a matrix, and

wherein the semiconductor integrated circuit is configured as a synchronous DRAM.

4. A semiconductor integrated circuit, comprising:

a memory core which includes a plurality of memory banks accessed by specifying access addresses, the access addresses including one of bank addresses, one of X addresses and one of Y addresses;

an interface circuit which receives an external control signal and address signals from outside of the semiconductor integrated circuit and provides a test enable signal, an internal control signal and internal address signals; and

a self-tester which tests the memory core in response to the test enable signal, the internal control signal and the internal address signals and generates test control codes for the memory core and the access addresses,

wherein the self-tester comprises a test controller which receives the test enable signal, the internal control signals and the internal address signals, and which generates select signals as test sequence commands that instruct test sequences, and a plurality of test sequencers each of which corresponds to each of the test sequences and is selected in response to the select signals,

wherein the test sequences differ in a manner of scanning at least one of the X addresses, the Y addresses, and the bank access addresses; and

wherein the self tester has an address counter in accordance with the test sequences.

5. The semiconductor integrated circuit according to claim 4 ,

wherein the plurality of test sequences are selected from single bank X scanning that updates the bank addresses after one round of the X addresses, single bank Y scanning that updates the bank addresses after one round of the Y addresses, and multi-bank X scanning that updates the X addresses after one round of the bank addresses.

6. The semiconductor integrated circuit according to claim 5 , further comprising a write data generating circuit,

wherein the write data generating circuit generates write data for the plurality of test sequences using at least one shift register having at least one feedback loop,

wherein the write data generating circuit includes

a shift register of plural bits,

a first feedback loop through which an output of an output side start storage stage of the shift register is fed back to an input of an output side end storage stage,

a first selector that selectively feeds back the output of the output side start storage stage of the shift register to the input of the output side start storage stage, and

a second selector that selects between the output and the input of the output side start storage stage of the shift register, and

wherein the first selector and the second selector are controlled by the self-tester individually.

7. The semiconductor integrated circuit according to claim 4 , including a clock generating circuit that generates a clock signal for test supplied to the memory,

wherein the clock generating circuit comprises a ring oscillator capable of changing a number of gate stages of an oscillation loop, changeable frequency dividers that frequency-divide an output of the ring oscillator, and an oscillation frequency control circuit that controls the number of gate stages of the oscillation loop based on comparison between a predetermined output of the changeable frequency dividers and an external clock signal.

8. The semiconductor integrated circuit according to claim 7 , wherein the ring oscillator includes plural selectable oscillation loops that differ in the number of gate stages.

9. The semiconductor integrated circuit according to claim 8 ,

wherein the oscillation frequency control circuit includes a frequency comparator that compares a frequency of the predetermined output of the changeable frequency dividers with a frequency of the external clock signal, and a counter that increments or decrements a count value according to the comparison by the frequency comparator, and

wherein a count value of the counter is used to select an oscillation loop of the ring oscillator to match the frequency of the predetermined output of the changeable frequency dividers to the frequency of the external clock signal.