In-plane switching mode liquid crystal display device and manufacturing method thereof

1. An array substrate for an in-plane switching liquid crystal display device, comprising:

a substrate;

a gate line and a data line on the substrate, the data line having at least one bent portion;

a thin film transistor at a crossing portion of the gate and data lines;

a passivation layer on an entire surface of the substrate including the thin film transistor, wherein the passivation layer is formed of one of silicon nitride film (SiN x ), silicon oxide film (SiO 2 ) and benzocyclobutene (BCB);

a plurality of common electrodes on the passivation layer, the plurality of common electrodes having at least one bent portion, wherein at least one of the plurality of common electrodes overlaps at least a portion of the data line;

a common line connected to the common electrodes; and

a plurality of pixel electrodes on the passivation layer, the plurality of pixel electrodes being alternated with the common electrodes, each pixel electrode having at least one bent portion.

2. The array substrate of claim 1 , further comprising a pixel line extending along a direction of the gate line and connected to the plurality of pixel electrodes.

3. The array substrate according to claim 2 , wherein the pixel line partially overlaps the common line.

4. The array substrate according to claim 2 , further comprising a storage capacitor located between the common line and the pixel line.

5. The array substrate according to claim 1 , wherein the at least one common electrode overlapping the data line is formed of a non-transparent material.

6. The array substrate according to claim 1 , wherein the common line is located adjacent to the gate line.

7. The array substrate of claim 1 , wherein the plurality of pixel electrodes and the common electrodes other than the at least one common electrode overlapping at least a portion of the data line are formed on a same layer.

8. A method of fabricating an array substrate, comprising:

forming a gate line, a gate electrode, and data line on a substrate, the data line having substantially zigzag shape;

forming a gate insulator on the gate line and gate electrode;

forming a thin film transistor at a crossing of the gate and data lines;

forming a passivation layer on an entire surface of the substrate including the thin film transistor, wherein the passivation layer is formed of one of silicon nitride film (SiN x ), silicon oxide film (SiO 2 ) and benzocyclobutene (BCB);

forming a plurality of common electrodes on the passivation layer, the plurality of common electrodes having a substantially zigzag shape, wherein at least one of the plurality of common electrodes overlaps at least a portion of the data line;

forming a common line connected to the plurality of common electrodes; and

forming a plurality of pixel electrodes and a pixel line on the passivation layer, the plurality of pixel electrodes having a substantially zigzag shape.

9. The method of claim 8 , wherein the pixel line partially overlaps the common line.

10. The method of claim 8 , wherein the at least one common electrode overlapping the data line is formed of a non-transparent material.

11. The method of claim 8 , further comprising forming a storage capacitor between the common line and the pixel line.

12. The method of claim 8 , wherein the common line is formed adjacent the gate line.

13. The method of claim 8 , wherein the plurality of pixel electrodes and the common electrodes other than the at least one common electrode overlapping at least a portion of the data line are formed on a same layer.

14. A method of fabricating an array substrate, comprising:

forming a gate line and gate electrode on a substrate;

forming a gate insulator on the gate line and gate electrode;

forming a data line, wherein the data line has a substantially zigzag shape;

forming a thin film transistor at a crossing portion of the gate line and data line;

forming a passivation layer on an entire surface of the substrate including the thin film transistor, wherein the passivation layer is formed of one of silicon nitride film (SiN x ), silicon oxide film (SiO 2 ) and benzocyclobutene (BCB);

forming a plurality of common electrodes and a plurality of pixel electrodes on the passivation layer, the common and pixel electrodes having a substantially zigzag shape and being alternated with each other, wherein at least one of the common electrodes overlaps a portion of the data line; and

forming a common line connected to the plurality of common electrodes.

15. The method of claim 14 , further comprising forming a pixel line extending along a direction of the gate line and connected to the plurality of pixel electrodes.

16. The method of claim 15 , wherein the pixel line partially overlaps the common line.

17. The method of claim 15 , further comprising forming a storage capacitor between the common line and the data line.

18. The method of claim 14 , wherein the at least one common electrode overlapping the data line is formed of a non-transparent material.

19. The method of claim 14 , wherein the plurality of pixel electrodes and the common electrodes other than the at least one common electrode overlapping at least a portion of the data line are formed on a same layer.