Method of fabricating silicon on glass via layer transfer

1. A method of fabricating a silicon-on-glass layer via layer transfer comprising:

seriatim

preparing a silicon substrate;

depositing a layer of SiGe on the silicon substrate;

depositing a layer of silicon on the SiGe layer;

preparing a glass substrate;

bonding the glass substrate to the silicon layer to form a composite wafer;

splitting the composite wafer to provide a split wafer having, in seriatim, a glass substrate, a layer of silicon; a layer of SiGe; and silicon layer split from the silicon substrate;

dry etching the split wafer to remove the silicon layer split from the silicon substrate and a portion of the SiGe layer;

annealing the split wafer to increase the bond between the silicon and the glass substrate;

selectively etching the split wafer to remove any remaining SiGe, thereby forming a silicon on glass wafer;

completing a desired IC device on the silicon on glass wafer.

2. The method of claim 1 wherein said depositing a layer of SiGe includes depositing a layer of SiGe to a thickness of between about 40 nm to 50 nm.

3. The method of claim 1 wherein said depositing a layer of silicon includes depositing a layer of silicon to a thickness of between about 10 nm to 50 nm.

4. The method of claim 3 wherein said depositing a layer of silicon includes depositing a layer of strained silicon.

5. The method of claim 3 wherein said depositing a layer of silicon includes depositing a layer of unstrained silicon.

6. The method of claim 1 wherein said splitting includes annealing the composite wafer at a temperature of less than 450° C. to avoid blistering of the silicon/SiGe/silicon layer, for between about one hour to three hours.

7. The method of claim 1 , which further includes, after said depositing a layer of SiGe on the silicon substrate, implanting hydrogen ions into the silicon substrate through the SiGe layer in a first hydrogen implantation step; annealing the silicon substrate and SiGe layer in a first annealing step to relax the SiGe layer; thereby forming a relaxed SiGe layer; and smoothing the relaxed SiGe layer; and wherein depositing a layer of silicon on the SiGe includes depositing a layer of strained silicon on the SiGe; implanting hydrogen ions in a second hydrogen implantation step through the strained silicon layer to facilitate splitting of the wafer; and wherein in said splitting includes splitting the composite wafer to provide a split wafer having, in seriatim, a glass substrate, a layer of strained silicon; a layer of relaxed SiGe; and silicon layer split from the silicon substrate.

8. The method of claim 7 wherein said first hydrogen implantation includes implanting H 2 + ions are implanted at an energy of between about 10 KeV and 100 KeV, at a dose of between about 2·10 14 cm −2 to 2·10 16 cm −2 .

9. The method of claim 7 wherein said wherein said second hydrogen implantation includes implanting H 2 + ions to an implant depth of between about 300 nm to 500 nm below the Si/SiGe interface, at an energy of about 140 keV, and a dose of about 4·10 16 cm −2 .

10. The method of claim 7 wherein said annealing the split wafer includes annealing the composite wafer at a temperature of between about 400° C. to 650° C. for between about thirty minutes to two hours.

11. The method of claim 1 wherein said preparing a glass substrate includes preparing a substrate taken from the group of substrate preparations consisting of preparing a plain glass substrate and preparing a glass substrate coated with an insulating layer, wherein the insulating layer is deposited by a deposition method taken from the group of deposition methods consisting of plasma deposition, CVD, sputtering, and other state-of-the art deposition methods.

12. The method of claim 11 wherein the insulating layer may be formed to a thickness of between about 10 nm to 1 μm.

13. A method of fabricating a silicon-on-glass layer via layer transfer comprising:

seriatim

preparing a silicon substrate;

depositing a layer of SiGe on the silicon substrate;

implanting hydrogen ions into the silicon substrate through the SiGe layer in a first hydrogen implantation step;

annealing the silicon substrate and SiGe layer in a first annealing step to relax the SiGe layer; thereby forming a relaxed SiGe layer;

smoothing the relaxed SiGe layer;

depositing a layer of silicon on the relaxed SiGe layer;

implanting hydrogen ions in a second hydrogen implantation step to facilitate splitting of the wafer;

preparing a glass substrate;

bonding the glass substrate to the strained silicon layer to form a composite wafer;

splitting the composite wafer to provide a split wafer having, in seriatim, a glass substrate, a layer of silicon; a layer of relaxed SiGe; and silicon layer split from the silicon substrate;

dry etching the split wafer to remove the silicon layer split from the silicon substrate and a portion of the relaxed SiGe layer;

annealing the split wafer to increase the bond between the silicon and the glass substrate in a second annealing step;

selectively etching the split wafer to remove any remaining SiGe, thereby forming a silicon on glass wafer;

completing a desired IC device on the silicon on glass wafer.

14. The method of claim 13 wherein said depositing a layer of SiGe includes depositing a layer of SiGe to a thickness of between about 40 nm to 500 nm.

15. The method of claim 13 wherein said first hydrogen implantation includes implanting H 2 + ions are implanted at an energy of between about 10 KeV and 100 KeV, at a dose of between about 2·10 14 cm −2 to 2·10 16 cm −2 .

16. The method of claim 13 wherein said depositing a layer of silicon includes depositing a layer of strained silicon to a thickness of between about 10 nm to 50 nm.

17. The method of claim 13 wherein said second hydrogen implantation includes implanting H 2 + ions to an implant depth of between about 300 nm to 500 nm below the Si/SiGe interface, at an energy of about 140 keV, and a dose of about 4·10 16 cm −2 .

18. The method of claim 13 wherein said splitting includes annealing the composite wafer at a temperature of less than 450° C. to avoid blistering of the silicon/SiGe/silicon layer, for between about one hour to three hours.

19. The method of claim 13 wherein said preparing a glass substrate includes preparing a substrate taken from the group of substrate preparations consisting of preparing a plain glass substrate and preparing a glass substrate coated with an insulating layer, wherein the insulating layer is deposited by a deposition method taken from the group of deposition methods consisting of plasma deposition, CVD, sputtering, and other state-of-the art deposition methods.

20. The method of claim 19 wherein the insulating layer may be formed to a thickness of between about 10 nm to 1 μm.

21. A method of fabricating a silicon-on-glass layer via layer transfer comprising:

seriatim

preparing a silicon substrate;

depositing a layer of SiGe on the silicon substrate;

implanting hydrogen ions into the silicon substrate through the SiGe layer in a first hydrogen implantation step;

annealing the silicon substrate and SiGe layer in a first annealing step to relax the SiGe layer; thereby forming a relaxed SiGe layer;

smoothing the relaxed SiGe layer;

depositing a layer of strained silicon on the relaxed SiGe layer;

implanting hydrogen ions in a second hydrogen implantation step to facilitate splitting of the wafer;

preparing a glass substrate;

bonding the glass substrate to the strained silicon layer to form a composite wafer;

splitting the composite wafer to provide a split wafer having, in seriatim, a glass substrate, a layer of strained silicon; a layer of relaxed SiGe; and silicon layer split from the silicon substrate;

dry etching the split wafer to remove the silicon layer split from the silicon substrate and a portion of the relaxed SiGe layer;

annealing the split wafer to increase the bond between the silicon and the glass substrate in a second annealing step;

selectively etching the split wafer to remove any remaining SiGe, thereby forming a silicon on glass wafer;

completing a desired IC device on the strained silicon on glass wafer.