Electromechanical resonator and method for fabricating such a resonator

1. An electromechanical resonator, comprising:

a monocrystalline-silicon substrate provided with an active zone delimited by an insulating region;

a vibrating beam anchored by at least one of its free ends on the insulating region and comprising a monocrystalline-silicon vibrating central part; and

a control electrode arranged above the vibrating beam and bearing on the active zone, the central part of the vibrating beam being separated from the active zone and from the control electrode.

2. The resonator according to claim 1 , wherein the vibrating beam is made of doped monocrystalline silicon, and in that the end part or parts of the vibrating beam, by which it is anchored on the insulating region, is or are made of doped polycrystalline silicon.

3. The resonator according to claim 1 , including at least one detection electrode connected to the active zone.

4. The resonator according to one of claim 3 , including two detection electrodes in contact with the active zone and arranged above the central part, on either side of the control electrode, while being separated from the beam.

5. The resonator according to claim 1 , wherein, the space between the vibrating beam, on the one hand, and the substrate and the control electrode, on the other hand, being obtained by selective etching of a sacrificial-material layer, and wherein the resonator includes at least a first encapsulation-material layer provided with access holes for access to the sacrificial-material layer and a second encapsulation-material layer used for plugging the access holes after the sacrificial-material layer has been etched through the access holes.

6. The resonator according to claim 5 , further including electrical-contact vias for access to the control electrode and to the vibrating beam.

7. The resonator according to claim 5 , wherein the vibrating beam is made of doped monocrystalline silicon, and in that the end part or parts of the vibrating beam, by which it is anchored on the insulating region, is or are made of doped polycrystalline silicon.

8. An integrated circuit comprising:

a circuit supporting substrate; and

a plurality of electromechanical resonators disposed on the circuit supporting substrate, each of the plurality of electromechanical resonators comprising:

a monocrystalline-silicon substrate provided with an active zone delimited by an insulating region;

a vibrating beam anchored by at least one of its free ends on the insulating region and comprising a monocrystalline-silicon vibrating central part; and

a control electrode arranged above the vibrating beam and bearing on the active zone, the central part of the vibrating beam being separated from the active zone and from the control electrode.

9. The integrated circuit according to claim 8 , wherein the vibrating beam is made of doped monocrystalline silicon, and in that the end part or parts of the vibrating beam, by which it is anchored on the insulating region, is or are made of doped polycrystalline silicon.

10. The integrated circuit according to claim 8 , including at least one detection electrode connected to the active zone.

11. The integrated circuit according to one of claim 10 , including two detection electrodes in contact with the active zone and arranged above the central part, on either side of the control electrode, while being separated from the beam.

12. The integrated circuit according to claim 8 , wherein, the space between the vibrating beam, on the one hand, and the substrate and the control electrode, on the other hand, being obtained by selective etching of a sacrificial-material layer, and wherein the resonator includes at least a first encapsulation-material layer provided with access holes for access to the sacrificial-material layer and a second encapsulation-material layer used for plugging the access holes after the sacrificial-material layer has been etched through the access holes.

13. The integrated circuit according to claim 12 , further including electrical-contact vias for access to the control electrode and to the vibrating beam.

14. The integrated circuit according to claim 13 , wherein the vibrating beam is made of doped monocrystalline silicon, and in that the end part or parts of the vibrating beam, by which it is anchored on the insulating region, is or are made of doped polycrystalline silicon.