Light emitting diode and method for manufacturing the same
View Patent ↗A light emitting diode and a method for manufacturing the same are disclosed. The light emitting diode comprises: a transparent substrate; a reflective layer located on a surface of the transparent substrate; a solder layer located on the other surface of the transparent substrate; a semiconductor epitaxial structure located on the solder layer, wherein the semiconductor epitaxial structure comprises a n-type contact layer, and the n-type contact layer can be a structure having a continuous flat surface, a structure having a continuous reticulate or bar surface, or a cylinder or prism structure having a discontinuous surface; and a transparent conductive layer located on the n-type contact layer of the semiconductor epitaxial structure.
1. A light emitting diode, comprising:
a transparent substrate;
a reflective layer located on a surface of the transparent substrate;
a solder layer on the other surface of the transparent substrate;
a semiconductor epitaxial structure located on the solder layer;
a transparent conductive layer located on the semiconductor epitaxial structure, wherein the semiconductor epitaxial structure comprises a p-type semiconductor contact layer, a p-type semiconductor cladding layer, a multiple quantum well active layer, a n-type semiconductor cladding layer and a n-type semiconductor contact layer stacked in sequence, wherein the p-type semiconductor layer contacts the solder layer, and the transparent conductive layer covers the n-type semiconductor contact layer, wherein
the material of the p-type semiconductor contact layer is AIGaInAsP;
the material of the p-type semiconductor cladding layer is AlGaInP;
the multiple quantum well active layer comprises an AIGaInP/GaInP structure;
the material of the n-type semiconductor cladding layer is AlGaInP; and
the material of the n-type semiconductor contact layer is GaAs.
2. The light emitting diode according to claim 1 , wherein the n-type semiconductor contact layer is a continuous surface structure.
3. The light emitting diode according to claim 1 , wherein the n-type semiconductor contact layer is a discontinuous surface structure, and the discontinuous surface structure is selected from the group consisting a cylinder structure and an prism structure.
4. A light emitting diode, comprising:
a transparent substrate;
a reflective layer located on a surface of the transparent substrate;
a solder layer on the other surface of the transparent substrate;
a semiconductor epitaxial structure located on the solder layer, wherein the semiconductor epitaxial structure comprises:
a p-type semiconductor contact layer located on the solder layer, wherein the material of the p-type semiconductor contact layer is AIGaInAsP;
a p-type semiconductor cladding layer located on a portion of a surface of the p-type semiconductor contact layer, and the other portion of the surface of the p-type semiconductor contact layer is exposed, wherein the material of the p-type semiconductor cladding layer is AIGaInP;
a multiple quantum well active layer located on the p-type semiconductor cladding layer, wherein the multiple quantum well active layer comprises an AIGaInP/GaInP structure;
a n-type semiconductor cladding layer located on the multiple quantum well active layer, wherein the material of the n-type semiconductor cladding layer is AIGaInP; and
a n-type semiconductor contact layer located on the n-type semiconductor cladding layer, wherein the material of the n-type semiconductor contact layer is GaAs; and
a transparent conductive layer located on the n-type semiconductor contact layer.
5. The light emitting diode according to claim 4 , wherein the n-type semiconductor contact layer is a continuous surface structure.
6. The light emitting diode according to claim 4 , wherein the n-type semiconductor contact layer is a discontinuous surface structure, and the discontinuous surface structure is selected from the group consisting a cylinder structure and an prism structure.
7. The light emitting diode according to claim 4 , further comprising a n-type contact pad on a portion of the transparent conductive layer and a p-type contact pad on the exposed portion of the surface of the p-type semiconductor contact layer.