Solid-state imaging device and method for manufacturing the same
View Patent ↗A solid-state imaging device, comprises: a semiconductor substrate having a first surface; a solid-state imaging element in the first surface of semiconductor substrate, the solid-state imaging element comprising a light-receiving region; a light-transmission member having a second surface and a third surface, the second surface being opposite to the third surface, wherein the light-transmission member and the first surface of the semiconductor substrate define a gap between the second surface of the light-transmission member and an outer surface of the light-receiving region; and an external connection terminal connected to the solid-state imaging element, wherein the light-transmission member comprises low α-ray glass.
1. A method for manufacturing a solid-state imaging device, comprising the steps of:
forming a plurality of solid-state imaging elements in a surface of a semiconductor substrate, each of the solid-state imaging elements comprising a light-receiving region;
forming a sealing cover member in which a plurality of light-transmission members and a plurality of indentation sections are integrally formed, wherein the forming the sealing cover member comprising: (i) adhering a first silicon substrate to a light-transmission member that comprises low α-ray glass; (ii) etching regions of the first silicon substrate so as to form a plurality of spacers and indentation sections between the spacers; (iii) adhering a second silicon substrate to the light-transmission member on the side opposite to the first silicon substrate; and (iv) etching a region of the light-transmission member and the second silicon substrate so as to form an indentation between every pair of spacers;
connecting the sealing cover member to the surface of the semiconductor substrate, so as to define gaps each of which is located between the light-transmission member and an outer surface of the light-receiving region, to form an integrated member;
forming external connection terminals corresponding to the solid-state imaging elements, to form an integrated member with the external connection terminals; and
separating the integrated member with the external connection terminals, for each of the solid-state imaging elements.
2. The method for manufacturing a solid-state imaging device according to claim 1 , wherein the connecting step is performed at a temperature that does not exceed 80° C.,
and the connecting step uses an adhesive which cures at a temperature lower than 80° C.
3. The method for manufacturing a solid-state imaging device according to claim 2 , wherein the connecting step is a step using a room temperature-curing type adhesive.
4. The method for manufacturing a solid-state imaging device according to claim 2 , wherein the connecting step is a step using a photo-curing type adhesive.
5. The method for manufacturing a solid-state imaging device according to claim 1 , wherein
the semiconductor substrate has a first surface,
each of the solid-state imaging elements is in the first surface of the semiconductor substrate,
each of the plurality of light-transmission members has a second surface and a third surface, the second surface being opposite to the third surface,
each of the plurality of light-transmission members and the first surface of the semiconductor substrate define the gaps which are located between the second surface and the outer surface of the light-receiving region,
each of the external connection terminal is connected to the corresponding solid-state imaging element, and
each of the spacers are between the second surface and the first surface.
6. The method for manufacturing a solid-state imaging device according to claim 5 , wherein
each of the plurality of light-transmission members has an α-ray threshold limit value of 0.002 or less (DPH/cm 2 ).
7. The method for manufacturing a solid-state imaging device according to claim 5 , wherein
the distance between the out surface of the light-receiving region and the third surface is set to be a predetermined value.
8. The method for manufacturing a solid-state imaging device according to claim 5 , wherein
the distance between the outer surface of the light-receiving region and the third surface is 0.5 mm or more.
9. The method for manufacturing a solid-state imaging device according to claim 5 , wherein
the distance between the outer surface of the light-receiving region and the third surface does not exceed 1.5 mm.
10. The method for manufacturing a solid-state imaging device according to claim 5 , wherein
each of the spacers is connected to at least one of the first surface and the second surface via a temperature-curing type adhesive.
11. The method for manufacturing a solid-state imaging device according to claim 5 , wherein
each of the spacers is connected to at least one of the first surface and the second surface via a photo-curing type adhesive.
12. The method for manufacturing a solid-state imaging device according to claim 5 , wherein
the width of each of the spacers is 100 to 500 μm.