IP Library Granted Patent US 7,089,648
Granted Patent B2
US 7,089,648 · App. 10/896,886 · Granted Aug 15, 2006

Method for fabricating a magnetoresistive head

Assignee: Hitachi, Ltd.
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Quick Facts
Patent No.
US 7,089,648
App. No.
10/896,886
Granted
Aug 15, 2006
Kind
B2
Abstract

There is provided a magnetoresistive head which can realize high sensitivity and low noise even when the reading track is being reduced. Longitudinal biasing is performed to a ferromagnetic free layer whose magnetization is rotated according to an external magnetic field by providing unidirectional magnetic anisotropy by exchange coupling to an antiferromagnetic layer. A hard magnetic film is arranged at the edge of a magnetoresistive film to reduce an effective reading track width.

Claims (10)

1. Method for fabricating a magnetoresistive head comprising:

making a magnetoresistive element having a first ferromagnetic layer, a second magnetic layer, a nonmagnetic conductive layer or a nonmagnetic tunneling barrier layer formed between said first ferromagnetic layer and said second ferromagnetic layer, a first antiferromagnetic layer formed on the first ferromagnetic layer opposite to the nonmagnetic conductive layer or a nonmagnetic tunneling barrier layer, and a second antiferromagnetic layer formed on the second ferromagnetic layer opposite to the nonmagnetic conductive layer or a nonmagnetic tunneling barrier layer,

wherein a blocking temperature T B1 of the first antiferromagnetic layer is higher than a blocking temperature T B2 of the second antiferromagnetic layer,

providing unidirectional magnetic anisotropy to the first ferromagnetic layer by the first antiferromagnetic layer, by heating higher than T B2′ and applying a magnetic field enough to saturate a magnetization direction of the first ferromagnetic layer in the element height direction,

providing unidirectional magnetic anisotropy to the second ferromagnetic layer by the second antiferromagnetic layer, by heating lower than T B1′ and applying a magnetic field enough to saturate a magnetization direction of the second ferromagnetic layer in the track width.

2. Method for fabricating a magnetoresistive head according to claim 1 , wherein the magnetoresistive element has a hard magnetic film formed so as to provide a magnetic field to the second ferromagnetic layer.

3. Method for fabricating a magnetoresistive head according to claim 1 , wherein the magnetoresistive element has a pair of electrodes for flowing a sense current to the magnetoresistive element.

4. Method for fabricating a magnetoresistive head according to claim 1 , wherein the magnetoresistive element has a flux guide for guiding an external magnetic field to the second ferromagnetic layer.

5. Method for fabricating a magnetoresistive head according to claim 4 , wherein the magnetoresistive element has a third antiferromagnetic layer arranged so as to provide unidirectional magnetic anisotropy to the magnetic flux guide.

6. Method for fabricating a magnetoresistive head according to claim 5 , wherein a blocking temperature of the third antiferromagnetic layer is T B3′ providing the unidirectional magnetic anisotropy to the first ferromagnetic layer, the second ferromagnetic layer and the third ferromagnetic layer to annealing tin the magnetic field under conditions of a temperature set from high to low in order of decreasing blocking temperature.

Priority Claims (1)
JP 2001-257265 · Aug 28, 2001 · national
Continuity (2)
Continuation 1007528600 · Feb 15, 2002
Related Publication 20050000085A1 · Jan 6, 2005