Display device and method of manufacturing the same
View Patent ↗Disclosed herein is a display device, including a display element, a first scanning line, a second scanning line, a data signal line, a switching element having a first terminal and a second terminal of a first conduction type, the first terminal being connected to the data signal line, for being held in a conducting state or a non-conducting state according to a voltage applied to the first scanning line, and a storage capacitance having a first electrode and a second electrode that shares the second scanning line, wherein the second terminal of the switching element is connected to the display element and connected to the first electrode of the storage capacitance including a semiconductor film of a second conduction type different from the second terminal.
1. A method of manufacturing a display device, said method comprising the steps of:
forming a conductive first scanning line and a conductive second scanning line arranged in parallel with each other, a first insulating film covering said first scanning line and said second scanning line, and a semiconductor film covering said first insulating film;
forming a first protective mask and a second protective mask for protecting a first channel region and a second channel region, respectively, of said semiconductor film, the first channel region and the second channel region being opposed to said first scanning line and said second scanning line, respectively; and
injecting an impurity of a first conduction type and an impurity of a second conduction type into a switching element region for forming a switching element including said first scanning line and a storage capacitance region for forming a storage capacitance including said second scanning line, respectively, in said semiconductor film, in a state in which said first protective mask and said second protective mask are formed.
2. The method of manufacturing a display device as set forth in claim 1 , said method further comprising the steps of:
forming a second insulating film so as to cover the semiconductor film having said switching element region and said storage capacitance region injected with the impurity of the first conduction type and the impurity of the second conduction type, respectively, and said first protective mask and said second protective mask;
forming, in said second insulating film, a first contact hole and a third contact hole reaching semiconductor regions of the first conduction type on both sides of said first scanning line;
forming, in said second insulating film, a second contact hole reaching a semiconductor region of the second conduction type on one side of said second scanning line;
connecting the semiconductor region of the first conduction type on one side of said first scanning line with the semiconductor region of the second conduction type on one side of said second scanning line by depositing a conductive material in said first contact hole and said second contact hole; and
forming a data signal line by depositing a conductive material in said third contact hole.
3. The method of manufacturing a display device as set forth in claim 2 ,
wherein said first contact hole is a same contact hole as said second contact hole.
4. The method of manufacturing a display device as set forth in claim 2 ,
wherein the conductive material deposited in said first contact hole and said second contact hole is a same material as the conductive material deposited in said third contact hole.
5. A method of manufacturing a display device, said method comprising the steps of:
forming a semiconductor film, an insulating film covering said semiconductor film, and a conductive first scanning line and a conductive second scanning line arranged in parallel with each other on said insulating film; and
injecting, from a side of said first scanning line and said second scanning line, an impurity of a first conduction type and an impurity of a second conduction type into a switching element region for forming a switching element including said first scanning line and a storage capacitance region for forming a storage capacitance including said second scanning line, respectively, in said semiconductor film.