IP Library › Granted Patent US 6,898,225
Granted Patent B2
US 6,898,225 · App. 10/899,779 · Granted May 24, 2005

Coupled cavity high power semiconductor laser

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,898,225
App. No.
10/899,779
Granted
May 24, 2005
Kind
B2
Abstract

An active gain region sandwiched between a 100% reflective bottom Bragg mirror and an intermediate partially reflecting Bragg mirror is formed on a lower surface of a supporting substrate, to thereby provide the first (“active”) resonator cavity of a high power coupled cavity surface emitting laser device. The bottom mirror is preferably in direct thermal contact with an external heat sink for maximum heat removal effectiveness. The reflectivity of the intermediate mirror is kept low enough so that laser oscillation within the active gain region will not occur. The substrate is entirely outside the active cavity but is contained within a second (“passive”) resonator cavity defined by the intermediate mirror and a partially reflecting output mirror, where it is subjected to only a fraction of the light intensity that is circulating in the gain region. The active gain region is preferably electrically excited, with a circular bottom electrode formed by an oxide current aperture between the bottom mirror and the heat sink, and with an annular top electrode formed on an upper surface of the substrate.

Claims (14)

1. A method of manufacturing a surface emitting coupled cavity semiconductor laser device, comprising the following steps:

preparing a semiconductor substrate, the semiconductor substrate being doped with n-type dopants;

epitaxially growing an n-type Bragg mirror on the semiconductor substrate;

epitaxially growing an undoped gain medium on the n-type Bragg mirror;

epitaxially growing a p-type Bragg mirror on the gain medium, the n-type and the p-type Bragg mirrors defining a gain cavity; and

positioning an output mirror at the substrate side opposite to the P Bragg mirror, the output mirror and the p-type Bragg mirror defining a resonant cavity of the semiconductor laser device.

2. The method of claim 1 , further comprising the following steps:

coating a substrate surface facing the output mirror with anti-reflective materials;

positioning an oxide aperture on the p-type Bragg mirror opposite to the gain medium; and

positioning a heat sink on the oxide aperture.

3. The method of claim 1 , prior to the step of positioning the output mirror, further comprising the following steps:

etching the substrate surface to a predetermined curved shape;

coating the curved substrate surface with anti-reflective materials; and

monolithically positioning the output mirror directly adjacent to the curved substrate surface.