Semiconductor light-emitting device and method for fabricating the device
View Patent ↗An n-type AlAs/n-type Al 0.5 Ga 0.5 As DBR layer and a p-type (Al 0.2 Ga 0.8 ) 0.5 In 0.5 P/p-type Al 0.5 In 0.5 P DBR layer are formed on an n-type GaAs substrate at specified intervals so that a reflection spectrum is centered at 650 nm and the resonance wavelength becomes 650 nm. A quantum well active layer (light-emitting layer) is formed so that the light emission peak wavelength becomes 650 nm in the belly position of the standing wave generated in a resonator constructed of both the DBR layers. A grating pattern is formed on the surface of a p-type Al 0.5 Ga 0.5 As light diffusion layer that serves as a light-emitting surface surrounded by a p-type electrode. By thus roughening the light-emitting surface, light emitted from the light-emitting layer is diffused in various directions, reducing the radiation angle dependency of the emission light wavelength.
1. A method for fabricating a semiconductor light-emitting device comprising a resonator including a pair of multi-layer reflection films formed with interposition of a specified interval on a GaAs substrate and a light-emitting layer formed in a belly position of a standing wave in the resonator, the method comprising:
a process for forming a semiconductor layer including two or more layers, including a layer comprising Al y Ga z In 1-y-z P (0≦y≦1, 0≦z≦1), on the multi-layer reflection film located on the opposite side of the GaAs substrate with respect to the light-emitting layer; and
a process for roughening a surface of an uppermost layer of the semiconductor layer, wherein the roughening reduces radiation angle dependency of an emission light wavelength.
2. A semiconductor light-emitting device fabricating method as claimed in claim 1 , wherein the roughening of the surface of the uppermost layer of the semiconductor layer is performed by forming a light-diffusing pattern by photolithography and etching.
3. A semiconductor light-emitting device fabricating method as claimed in claim 1 , wherein the roughening of the surface of the uppermost layer of the semiconductor layer is performed by abrasion.
4. A semiconductor light-emitting device fabricating method as claimed in claim 1 , wherein the roughening of the surface of the uppermost layer of the semiconductor layer is performed by scalding at least the semiconductor layer in hydrochloric acid.
5. A method for fabricating a semiconductor light-emitting device comprising a resonator including a pair of multi-layer reflection films formed with interposition of a specified interval on a GaAs substrate and a light-emitting layer formed in a belly position of a standing wave in the resonator, the method comprising:
a process for forming a semiconductor layer including two or more layers including a layer comprising Al y Ga z In 1-y-z P (0≦y≦1, 0≦z≦1) whose lattice constant differs from the GaAs substrate by 0.5% or more on a multi-layer reflection film located on the opposite side of the GaAs substrate with respect to the light-emitting layer, thereby roughening a surface of an uppermost layer of the semiconductor layer, wherein the roughening reduces radiation angle dependency of an emission light wavelength.