Flat panel display having light blocking layer

1. A light-emitting display device, comprising:

an insulating substrate having a thin film transistor formed thereon, the thin film transistor having at least one of a source electrode and a drain electrode;

a passivation layer formed on the insulating substrate over at least a portion of the thin film transistor, the passivation layer having a via hole formed therein, the via hole electrically couples the drain electrode to a pixel electrode;

a light-blocking layer formed over an entire upper surface of the passivation layer except for an area corresponding to the pixel electrode; and

a planarization layer formed on an upper surface of the light-blocking layer except for an area thereof corresponding to the pixel electrode,

wherein the planarization layer further includes a light-blocking shield formed on at least one side of the via hole and extending downward from a lower surface of the planarization layer into at least one recess formed in and extending from an upper side of the light-blocking layer to a lower side thereof, and

wherein the light-blocking shield extends further downward from the lower side of the light-blocking layer into at least one recess formed in and extending from an upper side to a lower side of the passivation layer.

2. The light-emitting display device of claim 1 , wherein the light-blocking shield is formed of a material that forms the planarization layer.

3. The light-emitting display device of claim 1 , wherein the light-blocking layer is a thin film metal insulator hybrid layer, the metal insulator hybrid layer having a concentration gradient of a metal material and a concentration gradient of a transparent material.

4. The light-emitting display device of claim 3 , wherein the concentration gradient of the metal material increases toward the passivation layer, and wherein the concentration gradient of the transparent material increases toward the planarization layer.

5. The light-emitting display device of claim 4 , wherein the transparent material is a transparent insulation material.

6. The light-emitting display device of claim 4 , wherein the transparent insulation material is a nitride layer.

7. The light-emitting display device of claim 4 , wherein the transparent insulation material is an oxide layer.

8. The light-emitting display device of claim 4 , wherein the transparent material is a transparent conductive material.

9. The light-emitting display device of claim 4 , wherein the transparent conductive material is indium tin oxide or indium zinc oxide.

10. The light-emitting display device of claim 1 , wherein the light-blocking layer is a thin film metal insulator hybrid layer, the metal insulator hybrid layer having a concentration gradient of an organic insulating material and a concentration gradient of a transparent material.

11. The light-emitting display device of claim 10 , wherein the organic insulating material is selected from a group consisting of Cr, CrOx, and carbon black.

12. The light-emitting display device of claim 10 , wherein the transparent material is a transparent conductive material.

13. The light-emitting display device of claim 12 , wherein the transparent conductive material is indium tin oxide or indium zinc oxide.

14. A light-emitting display device, comprising:

an insulating substrate having a thin film transistor formed thereon, the thin film transistor having at least one of a source electrode and a drain electrode;

a passivation layer formed on the insulating substrate over at least a portion of the thin film transistor, the passivation layer having a via hole formed therein, the via hole electrically couples the drain electrode to a pixel electrode;

a light-blocking layer formed over an entire upper surface of the passivation layer except for an area corresponding to the pixel electrode;

a planarization layer formed on an upper surface of the light-blocking layer except for an area thereof correspondin to the pixel electrode; and

an electrode element formed on a surface of the insulating substrate, the electrode element including a lower electrode, an organic emission layer, and an upper electrode covering the organic emission layer, wherein the organic emission layer contacts the lower electrode, and wherein the lower electrode includes a reflection layer and is connected to one of the source or drain electrodes,

wherein the planarization layer further includes a light-blocking shield formed on at least one side of the via hole and extending downward from a lower surface of the planarization layer into at least one recess formed in and extending from an upper side of the light-blocking layer to a lower side thereof, and

wherein the light-blocking shield extends further downward from the lower side of the light-blocking layer into at least one recess formed in and extending from an upper side to a lower side of the passivation layer.

15. The light-emitting display device of claim 14 , wherein the light-blocking shield is formed of a material that forms the planarization layer.

16. The light-emitting display device of claim 14 , wherein the light-blocking layer is a thin film metal insulator hybrid layer, the thin film metal insulator hybrid layer having a concentration gradient of a metal material and a concentration gradient of a transparent material.

17. The light-emitting display device of claim 16 , wherein the concentration gradient of the metal material increases toward the passivation layer, and wherein the concentration gradient of the transparent material increases toward the planarization layer.

18. The light-emitting display device of claim 17 , wherein the transparent material is a transparent insulation material.

19. The organic light-emitting display device of claim 18 , wherein the transparent insulation material is a nitride layer.

20. The light-emitting display device of claim 18 , wherein the transparent insulation material is an oxide layer.

21. The light-emitting display device of claim 18 , wherein the transparent material is a transparent conductive material.

22. The light-emitting display device of claim 18 , wherein the transparent conductive material is indium tin oxide or indium zinc oxide.

23. The light-emitting display device of claim 14 , wherein the light-blocking layer is a thin film metal insulator hybrid layer, the thin film metal insulator hybrid layer having a concentration gradient of an organic insulating material and a concentration gradient of a transparent material.

24. The light-emitting display device of claim 23 , wherein the organic insulating material is selected from a group consisting of Cr, CrOx, and carbon black.

25. The light-emitting display device of claim 23 , wherein the transparent material is a transparent conductive material.

26. The light-emitting display device of claim 25 , wherein the transparent conductive material is indium tin oxide or indium zinc oxide.

27. A light-emitting display device, comprising:

an insulating substrate on which a thin film transistor having a source electrode and a drain electrode is formed;

a first insulating layer formed on an entire surface of the substrate;

a second insulating layer formed on the first insulating layer;

a via hole formed on the first insulating layer and the second insulating layer to expose a first electrode;

an electrode element having a lower electrode formed on the second insulating layer, an organic thin film layer and an upper electrode, wherein the organic thin film layer contacts the lower electrode;

a light-blocking shield formed under the lower electrode; and

a light-blocking layer formed on an entire surface of the first insulating layer, and separated from the via hole by the light-blocking shield.

28. The light-emitting display device of claim 27 , wherein the first electrode is one of a source electrode or a drain electrode.

29. The light-emitting display device of claim 28 , wherein the light-blocking shield contacts both a portion of the light-blocking layer and a portion of the first insulating layer.

30. The light-emitting display device of claim 28 , wherein the light-blocking shield has a groove pattern to separate the light-blocking layer from a portion of the lower electrode formed in the via hole.

31. The light-emitting display device of claim 28 , wherein the light-blocking shield is formed in a groove pattern under the lower electrode to enclose the via hole.

32. The light-emitting display device of claim 27 , wherein the light-blocking shield extends outwards from a surface of the light-blocking layer.

33. The light-emitting display device of claim 27 , wherein the light-blocking layer is a thin film metal insulator hybrid layer, the thin film metal insulator hybrid layer having a concentration gradient of a metal material and a concentration gradient of a transparent material.

34. The light-emitting display device of claim 33 , wherein the first insulating layer is a passivation layer, and wherein the second insulating layer is a planarization layer.

35. The organic light-emitting display device of claim 34 , wherein the concentration gradient of the metal material increases toward the passivation layer, and wherein the concentration gradient of the transparent material increases toward the planarization layer.

36. The light-emitting display device of claim 35 , wherein the transparent material is a transparent insulation material.

37. The light-emitting display device of claim 36 , wherein the transparent insulation material is a nitride layer.

38. The light-emitting display device of claim 36 , wherein the transparent insulation material is an oxide layer.

39. The light-emitting display device of claim 36 , wherein the transparent material is a transparent conductive material.

40. The light-emitting display device of claim 39 , wherein the transparent conductive material is indium tin oxide or indium zinc oxide.

41. The light-emitting display device of claim 27 , wherein the light-blocking layer is a thin film metal insulator hybrid layer, the thin film metal insulator hybrid layer having a concentration gradient of an organic insulating material and a concentration gradient of a transparent material.

42. The light-emitting display device of claim 41 , wherein the organic insulating material is selected from a group consisting of Cr, CrOx, and carbon black.

43. The light-emitting display device of claim 41 , wherein the transparent material is a transparent conductive material.

44. The light-emitting display device of claim 43 , wherein the transparent conductive material is indium tin oxide or indium zinc oxide.