Inkjet-fabricated integrated circuits
View Patent ↗A method for forming an integrated circuit including at least two interconnected electronic switching devices, the method comprising forming at least part of the electronic switching devices by ink-jet printing.
1. A method for forming an integrated circuit having at least two interconnected electronic switching devices, the devices including at least one insulating layer, the method comprising:
forming at least part of the electronic switching devices by ink-jet printing,
wherein the step of ink-jet printing comprises ink-jet printing a solvent onto at least one localized region of said at least one insulating layer of the devices without using a mask so as to dissolve said at least one insulating layer in the localized region to leave a void extending through said at least one insulating layer.
2. A method as claimed in claim 1 , comprising the step of depositing electrically conductive material in the voids.
3. A method for defining an electronic circuit from an electronic device array comprising a substrate and a plurality of transistors located on the substrate, each transistor having at least one interconnection electrode for allowing interconnection of the transistors, the method comprising:
defining a pattern of interconnection between at least two of the transistors wherein said defining step comprises ink-jet printing a solvent onto localized regions of at least one insulating layer of the devices without using a mask so as to dissolve the at least one insulating layer in the localized regions to leave voids extending through the at least one insulating layer, and depositing electrically conductive material in the voids so as to provide a conductive path between two of the interconnection electrodes.
4. A method for forming an integrated circuit having at least two interconnected electronic switching devices, the devices including at least one insulating layer, the method comprising:
forming at least part of the electronic switching devices by ink-jet printing,
wherein the step of ink-jet printing comprises ink-jet printing a solvent onto at least one localized region of said at least one insulating layers of the devices so as to dissolve said at least one insulating layers in the localized region to leave a void extending through said at least one insulating layer with material dissolved to form said void being redeposited at a side of the void.
5. A method as claimed in claim 4 , comprising the step of depositing electrically conductive material in the void.
6. A method for defining an electronic circuit from an electronic device array comprising a substrate and a plurality of transistors located on the substrate, each transistor having at least one interconnection electrode for allowing interconnection of the transistors, the method comprising:
defining a pattern of interconnection between at least two of the transistors wherein said defining step comprises ink-jet printing a solvent onto localized regions of at least one insulating layer of the devices so as to dissolve the at least one insulating layer in the localized regions to leave voids extending through the at least one insulating layer with material dissolved to form said voids being redeposited at a side of the voids, and depositing electrically conductive material in the voids so as to provide a conductive path between two of the interconnection electrodes.
7. A method for defining an electronic device from an electronic device array comprising:
a substrate and a plurality of transistors of functional blocks of transistors located on the substrate, each transistor or functional block having at least one interconnection electrode for allowing interconnection of the transistors;
the method comprising defining a material of conductive interconnection between at least two of the transistors including at least one of the following steps: ink-jet printing conductive material so as to provide a conductive path between two of the interconnection electrodes; and
opening a via-hole through an insulating layer of a transistor by local deposition of solvents on to an insulating layer of the transistor so as to dissolve the insulating layer to leave a void extending through the insulating layer, with material dissolved to form said void being redeposited at a side of the void.