Semiconductor device and method of manufacturing the same
View Patent ↗The present invention provides a semiconductor device capable of improving productivity while maintaining electrical characteristics, and a manufacturing method thereof. One characteristic point of the present invention is that a plating processing condition (A) for forming a metal wiring layer (redistribution wiring) corresponding to a first conductive layer and a plating processing condition (B) for forming a post electrode corresponding to a second conductive layer are made different from each other.
1. A semiconductor device, comprising:
a semiconductor substrate having a main surface with circuit elements formed thereon;
electrode pads formed on the main surface and respectively electrically connected to the circuit elements;
an insulating film which has openings each exposing part of the surface of each of the electrode pads and covers the main surface;
first conductive patterns each extending from the surface of the electrode pad to the surface of the insulating film and formed by a first plating process set to a first condition;
second conductive patterns each electrically connected to a respective first conductive pattern, each having a surface ground together with an encapsulating resin and formed by a second plating process set to a second condition different from the first condition;
the encapsulating resin which has a surface ground together with the second conductive patterns and covers the first conductive patterns and the insulating film; and
external terminals each formed on the surface of the respective second conductive patterns.
2. A semiconductor device according to claim 1 , wherein the first conductive pattern is a redistribution wiring of a wafer level chip size package.
3. A semiconductor device according to claim 1 , wherein the second conductive pattern is a protruded electrode having a top surface and a bottom surface, the top surface being ground with the encapsulating resin and the bottom surface being contacted to the first conductive pattern.
4. A semiconductor device according to claim 1 , wherein the respective surfaces of the second conductive patterns are flush with and in a same plane as, an upper surface of the encapsulating resin.
5. A semiconductor device according to claim 1 , further comprising an insulating layer disposed over said semiconductor substrate and under said electrode pads.
6. A semiconductor device according to claim 5 , further comprising a passivation film disposed over said insulating layer and under said insulating film.
7. A semiconductor device according to claim 1 , further comprising a passivation film disposed over said semiconductor substrate and under said insulating film.
8. A semiconductor device according to claim 1 , further comprising metal thin films, each being disposed between a respective electrode pad and a respective first conductive pattern.
9. A semiconductor device, comprising:
a semiconductor substrate having a main surface with a circuit element formed thereon;
at least one electrode pad formed on the main surface and being electrically connected to the circuit element;
an insulating film having an opening that exposes part of a surface of the electrode pad, and which covers the main surface;
at least one first conductive pattern extending from above the surface of the electrode pad to above the surface of the insulating film;
an encapsulating resin which covers the first conductive pattern and the insulating film;
at least one second conductive pattern electrically connected to the first conductive pattern, and having a top surface that is flush with and in a same plane as, a surface of the encapsulating resin; and
at least one external terminal formed on the surface of the second conductive pattern.
10. A semiconductor device according to claim 9 , wherein the second conductive pattern is a protruded electrode having the top surface and a bottom surface, the top surface being ground with the encapsulating resin and the bottom surface contacting the first conductive pattern.
11. A semiconductor device according to claim 9 , wherein the first conductive pattern is a redistribution wiring of a wafer level chip size package.
12. A semiconductor device according to claim 9 , further comprising an insulating layer disposed over said semiconductor substrate and under said electrode pad.
13. A semiconductor device according to claim 12 , further comprising a passivation film disposed over said insulating layer and under said insulating film.
14. A semiconductor device according to claim 9 , further comprising a passivation film disposed over said semiconductor substrate and under said insulating film.
15. A semiconductor device according to claim 9 , further comprising a metal thin film disposed between said electrode pad and said first conductive pattern.