Solid-state imaging device and method for manufacturing the same
View Patent ↗A solid-state imaging device, comprises: a semiconductor substrate having a first surface; a solid-state imaging element in the first surface of the semiconductor substrate, the solid-state imaging element comprising a light-receiving region; a light-transmission member having a second surface and a third surface, the second surface being opposite to the third surface, wherein the light-transmission member and the first surface of the semiconductor substrate define a gap between the second surface of the light-transmission member and an outer surface of the light-receiving region; and an external connection terminal connected to the solid-state imaging element, wherein a distance between the outer surface of the light-receiving region and the third surface of the light-transmission member is 0.5 mm or more.
1. A method for manufacturing a solid-state imaging device, comprising the steps of:
forming a plurality of solid-state imaging elements in a first surface of a semiconductor substrate, each of the solid-state imaging elements comprising a light-receiving region;
forming a sealing cover member in which a plurality of light-transmission members and a plurality of indentation sections are integrally formed, each of the light-transmission members having a second surface and a third surface opposite to the second surface, wherein the forming the sealing cover member comprising: (i) adhering a first silicon substrate to a light-transmission member; (ii) etching regions of the first silicon substrate so as to form a plurality of spacers and indentation sections between the spacers; (iii) adhering a second silicon substrate to the light-transmission member on the side opposite to the first silicon substrate; and (iv) etching a region of the light-transmission member and the second silicon substrate so as to form an indentation between every pair of spacers;
connecting the sealing cover member to the first surface of the semiconductor substrate so as to define gaps, each of which is located between the second surface of the light-transmission member and an outer surface of the light-receiving region, to form an integrated member;
forming external connection terminals corresponding to the solid-state imaging elements, to form an integrated member with the external connection terminals; and
separating the integrated member with the external connection terminals, for each of the solid-state imaging elements,
wherein the gaps are adjusted so that a distance between the outer surface of the light-receiving region and the third surface of the light-transmission member is 0.5 to 1.5 mm.
2. The method for manufacturing a solid-state imaging device according to claim 1 , wherein, in the connecting step, the light-transmission member is connected to the first surface of the semiconductor substrate via the spacers so that a distance between the outer surface of the light-receiving region and the second surface of the light-transmission member is 0.08 mm or more.
3. The method for manufacturing a solid-state imaging device according to claim 2 , wherein the connecting step is a step using a room temperature-curing type adhesive.
4. The method for manufacturing a solid-state imaging device according to claim 2 , wherein the connecting step is a step using a photo-curing type adhesive.
5. The method for manufacturing a solid-state imaging device according to claim 2 , wherein the connecting step is using an adhesive which cures at a temperature lower than 80° C.
6. The method according to claim 1 , wherein
a distance between the outer surface of the light-receiving region and the second surface is 0.08 mm or more.
7. The method according to claim 1 , wherein
the spacers are connected to at least one of the first surface and the second surface via a room-temperature curing type adhesive.
8. The method according to claim 1 , wherein
the spacers are connected to at least one of the first surface and the second surface via a photo-curing type adhesive.
9. The method according to claim 1 , wherein
the width of each of the spacer is 100 to 500 μm.
10. The method according to claim 1 , wherein
the light-transmission member is bonded to the semiconductor substrate through the spacer with an adhesive at the bonding temperature within a range of 20° C to 80° C.