Radial pulsed arc discharge gun for synthesizing nanopowders
View Patent ↗A system and method for synthesizing nanopowder which provides for precursor material ablation from two opposing electrodes that are spaced apart within a gaseous atmosphere, where a plasma is created by a high power pulsed electrical discharge between the electrodes, such pulse being of short duration to inertially confine the plasma, thereby creating a high temperature and high density plasma having high quench and/or reaction rates with the gaseous atmosphere for improved nanopowder synthesis.
1. An apparatus for synthesizing nanopowders, which comprises:
a first hollow ablative body composed of a first precursor material and having a first outer diameter, and further having a first axial bore of a second diameter;
an anode electrode of a second precursor material having a third diameter smaller than said second diameter, and fitted within said first axial bore but electrically isolated from said first hollow ablative body;
a second hollow ablative body composed of a third precursor material and having a fourth outer diameter, and further having a second axial bore of a fifth diameter;
a cathode electrode of a fourth precursor material having a sixth diameter and fitted within said second axial bore but electrically isolated from said second hollow ablative body, and wherein said first hollow ablative body and said second hollow ablative body are spaced apart in a gaseous atmosphere; and
a power supply which is in electrical communication with said anode electrode and said cathode electrode, and which effects a high power pulsed electrical discharge to ablate said first hollow ablative body and said second hollow ablative body to produce said nanopowders.
2. The apparatus of claim 1 , wherein said gaseous atmosphere consists of one of an inert gas, a reactive gas, and a mixture of inert and reactive gases.
3. The apparatus of claim 1 , wherein said gaseous atmosphere is a mixture of inert gases.
4. The apparatus of claim 1 , wherein said anode electrode, said cathode electrode, said first hollow ablative body, and said second hollow ablative body are composed of a same material.
5. The apparatus of claim 1 , wherein said first hollow ablative body and said second hollow ablative body are composed of a first material, said anode electrode and said cathode electrode are composed of a second material, and said first material is different from said second material.
6. The apparatus of claim 1 , wherein said first hollow ablative body and said second hollow ablative body are made of nonconducting material, and are without electrical insulation.
7. The apparatus of claim 1 , wherein electrical insulation is provided by a first annular insulator placed between said anode electrode and said first hollow ablative body, and by a second annular insulator placed between said cathode electrode and said second hollow ablative body.
8. The apparatus of claim 1 , wherein said first hollow ablative body and said anode electrode form a first composite electrode, said second hollow ablative body and said cathode electrode form a second composite electrode, and said first composite electrode and said second composite electrode radially center said pulsed electrical discharge and substantially prevent axial expansion of a plasma created from ablation of said precursor material.
9. The apparatus of claim 8 , wherein said pulsed electrical discharge is of a duration short enough to inertially confine said plasma.
10. The apparatus of claim 8 , wherein said plasma is of a high temperature and high density to accommodate more rapid quenching by and more rapid reaction with said gaseous atmosphere for improved nanopowder production rates.
11. The apparatus of claim 10 , wherein said high temperature is of the order of 50,000° K.
12. The apparatus of claim 1 , wherein said nanopowders are comprised substantially of unagglomerated nanopowder.
13. The apparatus of claim 1 , wherein said first hollow ablative body, and said second hollow ablative body, are both one of conductor, semiconductor, and nonconductor.
14. The method of claim 1 , wherein the first outer diameter is the same as the fourth outer diameter.
15. The method of claim 1 , wherein the second diameter is the same as the fifth diameter.
16. The method of claim 1 , wherein the third diameter is the same as the sixth diameter.
17. The method of claim 1 , wherein the first precursor material is the same as the third precursor material.
18. The method of claim 1 , wherein the second precursor material is the same as the fourth precursor material.
19. The method of claim 1 , wherein:
the first outer diameter is the same as the fourth outer diameter;
the second diameter is the same as the fifth diameter;
the third diameter is the same as the sixth diameter;
the first precursor material is the same as the third precursor material; and
the second precursor material is the same as the fourth precursor material.