Electrode, method for forming an electrode, thin-film transistor, electronic circuit, organic electroluminescent element, display, and electronic equipment
View Patent ↗An electrode is provided that is economically produced and capable of efficiently injecting holes. Also provided are a method to form an electrode that is capable of easily manufacturing such an electrode, a highly reliable thin-film transistor, an electronic circuit using this thin-film transistor, an organic electroluminescent element, a display, and electronic equipment. A thin-film transistor is a top-gate thin-film transistor. The thin-film transistor includes a source electrode and a drain electrode that are placed separately from each other. The thin-film transistor also includes an organic semiconductor layer that is laid out between the source electrode and the drain electrode, and a gate insulating layer that is provided between the organic semiconductor layer and a gate electrode. This structure is mounted on a substrate. Each of the source electrode and the drain electrode is composed of two layers, that is, an underlying electrode layer and a surface electrode layer. The surface electrode layer includes an oxide containing at least one of Cu, Ni, Co, Ag.
1. An active matrix device having a plurality of data lines and a plurality of scan lines that intersect each other, a plurality of thin-film transistors provided at each of a plurality of intersections of the plurality of data lines and the plurality of scan lines, each of the plurality of thin-film transistors comprising: a gate electrode; an organic semiconductor layer including a p-type organic semiconductor material; a gate insulating layer positioned between the gate electrode and the organic semiconductor layer; and first and second electrodes contacting the organic semiconductor layer, at least the first electrode including a metal layer and a metal-oxide layer, the metal-oxide layer including Cu being disposed between the organic semiconductor layer and the metal layer.
2. An active matrix device having a plurality of data lines and a plurality of scan lines that intersect each other, a plurality of thin-film transistors provided at each of a plurality of intersections of the plurality of data lines and the plurality of scan lines, each of the plurality of thin-film transistors comprising: a gate electrode; an organic semiconductor layer including a p-type organic semiconductor material; a gate insulating layer positioned between the gate electrode and the organic semiconductor layer; and first and second electrodes contacting the organic semiconductor layer, at least the first electrode including a metal layer and a metal-oxide layer, the metal-oxide layer including Ni being disposed between the organic semiconductor layer and the metal layer.
3. An active matrix device having a plurality of data lines and a plurality of scan lines that intersect each other, a plurality of thin-film transistors provided at each of a plurality of intersections of the plurality of data lines and the plurality of scan lines, each of the plurality of thin-film transistors comprising: a gate electrode; an organic semiconductor layer including a p-type organic semiconductor material; a gate insulating layer positioned between the gate electrode and the organic semiconductor layer; and first and second electrodes contacting the organic semiconductor layer, at least the first electrode including a metal layer and a metal-oxide layer, the metal-oxide layer including Co being disposed between the organic semiconductor layer and the metal layer.
4. An active matrix device having a plurality of data lines and a plurality of scan lines that intersect each other, a plurality of thin-film transistors provided at each of a plurality of intersections of the plurality of data lines and the plurality of scan lines, each of the plurality of thin-film transistors comprising: a gate electrode; an organic semiconductor layer including a p-type organic semiconductor material; a gate insulating layer positioned between the gate electrode and the organic semiconductor layer; and first and second electrodes contacting the organic semiconductor layer, at least the first electrode including a metal layer and a metal-oxide layer, the metal-oxide layer including Ag being disposed between the organic semiconductor layer and the metal layer.
5. An active matrix device having a plurality of data lines and a plurality of scan lines that intersect each other, a plurality of thin-film transistors provided at each of a plurality of intersections of the plurality of data lines and the plurality of scan lines, each of the plurality of thin-film transistors comprising: a gate electrode; an organic semiconductor layer including a p-type organic semiconductor material; a gate insulating layer positioned between the gate electrode and the organic semiconductor layer; and first and second electrodes contacting the organic semiconductor layer, at least the first electrode including a metal layer and a metal-oxide layer, the metal-oxide layer including Al being disposed between the organic semiconductor layer and the metal layer.
6. An active matrix device having a plurality of data lines and a plurality of scan lines that intersect each other, a plurality of thin-film transistors provided at each of a plurality of intersections of the plurality of data lines and the plurality of scan lines, each of the plurality of thin-film transistors comprising: a gate electrode; an organic semiconductor layer including a p-type organic semiconductor material; a gate insulating layer positioned between the gate electrode and the organic semiconductor layer; and a first and second electrodes contacting the organic semiconductor layer, at least the first electrode including a metal layer and a metal sulfide layer, the metal sulfide layer being disposed between the organic semiconductor layer and the metal layer.
7. An active matrix device having a plurality of data lines and a plurality of scan lines that intersect each other, a plurality of thin-film transistors provided at each of a plurality of intersections of the plurality of data lines and the plurality of scan lines, each of the plurality of thin-film transistors comprising: a gate electrode; an organic semiconductor layer including a p-type organic semiconductor material; a gate insulating layer positioned between the gate electrode and the organic semiconductor layer; and a first and second electrodes contacting the organic semiconductor layer, at least the first electrode including a metal layer and a metal chloride layer, the metal chloride layer being disposed between the organic semiconductor layer and the metal layer.