Apparatus and method for chemical mechanical polishing process

1. An apparatus for use with a chemical mechanical polishing (CMP) process comprising:

a polishing part configured to perform a CMP process to a polishing endpoint for a polishing target deposited on a substrate;

a cleaning part configured to clean the substrate;

a resistance measurement part configured to measure a sheet resistance of the substrate; and

a CMP control part configured to determine based on the sheet resistance whether a residual target exists, to estimate re-polishing time, and to control the polishing part to perform a re-polishing process if the residual target exists.

2. The method as defined by claim 1 , wherein the CMP control part comprises:

a residual thickness calculation module configured to calculate a thickness of the residual target based on the sheet resistance measured by the resistance measurement part and a specific resistance of the polishing target;

a saving module configured to save information including at least one of a specific resistance associated with the polishing target, the thickness of a residual target, a polishing degree, or a polishing speed;

a polishing time estimation module configured to estimate re-polishing time based on at least one of the polishing speed or the thickness of the residual target; and

a control module configured to control a linkage of the modules, to determine whether the residual target exists based on the sheet resistance, to transfer the re-polishing time to the polishing part, and to make the polishing part perform a re-polishing process if the residual target exists.

3. A method for a chemical mechanical polishing (CMP) process comprising:

performing a CMP process for a polishing target on a substrate to a polishing endpoint;

measuring a sheet resistance of the substrate;

determining whether a residual target exists based on the sheet resistance;

calculating the thickness of the residual target based on the sheet resistance and the specific resistance of the polishing target material;

estimating re-polishing time based on the thickness of the residual target and the polishing speed for the polishing target material; and

performing a CMP process for the polishing target on the substrate during the re-polishing time.

4. The device as defined by claim 3 , further comprising cleaning the substrate before the sheet resistance is measured.

5. The device as defined by claim 3 , wherein the polishing target on the substrate comprises at least one metallic material.