Coupled superconducting charge quantum bit device and controlled-not gate using the same
View Patent ↗A control quantum bit circuit and a target quantum bit circuit each have a quantum box electrode including a superconductor, a counter electrode coupled to the quantum box electrode through a tunnel barrier, and a gate electrode coupled to the quantum box electrode through a gate capacitor. The quantum box electrode of the control quantum bit circuit is coupled to the quantum box electrode of the target quantum bit circuit through a box-electrode coupling capacitor.
1. A superconducting charge quantum multi-bit device, comprising:
a first superconducting charge quantum bit device serving as a target quantum bit circuit;
a second superconducting charge quantum bit device serving as a control quantum bit circuit; and
an electric capacitor coupling the first and second superconducting charge quantum bit devices.
2. The device according to claim 1 , wherein
each of the first and second superconducting charge quantum bit devices includes a quantum box electrode comprising a superconductor, a counter electrode coupled to the quantum box electrode through a tunnel barrier, and a gate electrode coupled to the quantum box electrode through a gate electrostatic capacitor, and
the quantum box electrode of the first superconducting charge quantum bit device is coupled to the quantum box electrode of the second superconducting charge quantum bit device through the electric capacitor.
3. A controlled-NOT gate using coupled superconducting charge quantum bits including first and second superconducting bit devices, wherein
each of the first and second superconducting bit devices includes a quantum box electrode comprising a superconductor, a counter electrode coupled to the quantum box electrode through a tunnel barrier, and a gate electrode coupled to the quantum box electrode through a first electrostatic capacitor,
the quantum box electrode of the first superconducting bit device is coupled to the quantum box electrode of the second superconducting bit device through a second electrostatic capacitor, and
the gate electrode of the second superconducting bit device further includes pulse supply means for supplying a predetermined pulse.
4. The controlled-NOT gate according to claim 3 , wherein the predetermined pulse includes a voltage, of which a peak value is determined by the first electrostatic capacitor of the second superconducting bit device, and a duration of the peak value is determined by a Josephson coupling energy produced between the corresponding superconducting box electrode and the counter electrode.
5. The controlled-NOT gate according to claim 3 , wherein the predetermined pulse includes a trapezoidal pulse.
6. The controlled-NOT gate according to claim 3 , wherein the pulse supply means supplies a microwave pulse as the predetermined pulse to the gate electrode of the second superconducting bit device.
7. The device of claim 1 , as applied to provide a controlled-NOT gate function.
8. The device of claim 2 , wherein a voltage determined by the gate electrostatic capacitor is applied to a corresponding gate electrode of each of the first and second superconducting bit devices for a predetermined time.
9. The device of claim 8 , wherein the voltage determined by the gate electrostatic capacitor is obtained by dividing an elementary charge by the capacitance of the gate electrostatic capacitor.
10. The device of claim 2 , wherein a respective DC bias is applied to the gate electrodes of the first and second superconducting charge quantum bit devices.
11. The device of claim 10 , wherein a pulse signal is applied to at least one of the gate electrodes to thereby generate an entanglement.
12. The device of claim 11 , wherein said pulse signal comprises a voltage pulse.
13. The device of claim 11 , wherein said pulse signal comprises a microwave pulse.
14. A controlled-NOT gate, comprising:
a first superconducting charge quantum bit device;
a second superconducting charge quantum bit device; and
an electric capacitor coupling the first and second superconducting charge quantum bit devices.
15. The controlled-NOT gate of claim 14 , wherein:
each of the first and second superconducting charge quantum bit devices includes a quantum box electrode comprising a superconductor, a counter electrode coupled to the quantum box electrode through a tunnel barrier, and a gate electrode coupled to the quantum box electrode through a gate electrostatic capacitor; and
the quantum box electrode of the first superconducting charge quantum bit device is coupled to the quantum box electrode of the second superconducting charge quantum bit device through the electric capacitor.
16. The controlled-NOT gate of claim 15 , wherein the gate electrode of the second superconducting bit device further includes a pulse supply means for supplying a predetermined pulse.
17. The controlled-NOT gate according to claim 16 , wherein the predetermined pulse includes a voltage, of which a peak value is determined by the first electrostatic capacitor of the second superconducting bit device, and a duration of the peak value is determined by a Josephson coupling energy produced between a corresponding superconducting box electrode and the counter electrode.
18. The controlled-NOT gate of claim 15 , wherein a respective DC bias is applied to the gate electrodes of the first and second superconducting charge quantum bit devices.
19. The controlled-NOT gate of claim 18 , wherein a pulse signal is applied to at least one of the gate electrodes to thereby generate an entanglement.
20. The controlled-NOT gate of claim 19 , wherein said pulse signal comprises a microwave pulse.