Circuit array substrate
View Patent ↗Poly-silicon semiconductor layer 21 and dummy poly-silicon semiconductor layer 25 are formed in insulation from each other on glass substrate. Gate insulation film 31 is formed on poly-silicon semiconductor layer 21 , dummy poly-silicon semiconductor layer 25 and glass substrate and covered with scanning and gate lines 11 , which is overlapped with poly-silicon semiconductor layer 21 and dummy poly-silicon semiconductor layer 25 . Poly-silicon semiconductor layer 21 is coupled with a reference potential to define capacitor Cc and also with scanning and gate line 11 to define capacitor Cd. Likewise, dummy poly-silicon semiconductor layer 25 is coupled with a reference potential to define capacitor Cc and also with scanning and gate line 11 to define capacitor Cd. Capacitors Cc and Cd suppress increase in voltage applied to gate insulation film 31 between scanning and gate line 11 and poly-silicon semiconductor layer 21 due to electrostatic charges.
1. A circuit array substrate, comprising:
an optically transparent substrate;
a thin-film transistor formed on said transparent substrate having a first semiconductor layer, a gate insulation film and a gate line; and
a second semiconductor layer formed on said transparent substrate,
wherein said gate line is overlapped with said first and second semiconductor layers through said gate insulation film, and
an equation Ca/(Ca+Cb)<Cc/(Cc+Cd) is satisfied,
where Ca is a capacitor defined between said first semiconductor layer and a reference potential through said transparent substrate,
Cb is a capacitor defined between said first semiconductor layer and said gate line through said gate insulation film,
Cc is a capacitor defined between said second semiconductor layer and said reference potential through said transparent substrate, and
Cd is a capacitor defined between said second semiconductor layer and said gate line.
2. A circuit array substrate according to claim 1 , wherein said first semiconductor layer is made in a process, and said second semiconductor layer is made in the same process as said first semiconductor layer.
3. A circuit array substrate according to claim 2 , wherein said gate insulation film is formed on said transparent substrate, and said gate line is formed on said gate insulation film.
4. A circuit array substrate according to claim 3 , further comprising a first insulation film covering said gate line and said gate insulation film, wherein said first insulation film is made by applying a plasma chemical vapor deposition,
said transparent substrate is a glass substrate, and
said first and second semiconductor layers are poly-silicon semiconductor layers.
5. A circuit array substrate according to claim 4 , further comprising a video signal line formed on said second semiconductor layer through said first insulation film.
6. A circuit array substrate according to claim 5 , further comprising a protective film formed on said video signal line and said first insulation film, and
a color layer formed on said protective film;
wherein said second semiconductor layer is provided for said color layer.
7. A flat panel display device having a circuit array substrate according to one of claims 1 through 6 , further comprising an optical modulator formed on a main plane of said circuit array substrate.