Thin film transistor formed on a transparent substrate
View Patent ↗A thin-film transistor is formed on a transparent substrate and has a gate electrode film layer and a source and drain regions, and further has an alignment mark made of one and the same constituent material as a constituent material of at least one of the gate electrode film layer and source and drain regions and formed at one and the same position as the gate electrode film layer or source and drain region.
1. An apparatus for manufacturing a thin-film transistor, comprising:
a light source means;
a mask means for forming a light beam emitted from said light source means into a prescribed shape and forming a light path directina the shaped beam in a prescribed direction; and
a substrate movement means onto which a substrate including a semiconductor device constituent part rests, movable so as to cause a prescribed location of said semiconductor device constituent part to oppose the light path,
wherein said mask means comprises an alignment mark detection means for detecting an alignment mark provided on said semiconductor device constituent part, and
wherein said alignment mark detection means of said mask means further comprises means for image processing.
2. An apparatus for manufacturing a thin-film transistor, comprising:
a light source means;
a mask means for forming a light beam emitted from said light source means into a prescribed shape and forming a light path directing the shaped beam in a prescribed direction; and
a substrate movement means onto which a substrate including a semiconductor device constituent part rests, movable so as to cause a prescribed location of said semiconductor device constituent part to oppose the light path,
wherein said mask means comprises an alignment mark detection means for detecting an alignment mark provided on said semiconductor device constituent part, and
wherein an operation of aligning a desired light path in said mask means with a desired location in said semiconductor device constituent part is performed by performing control so that an alignment mark provided in said mask means coincides with an alignment mark detecting means provided in said semiconductor device constituent part.
3. An apparatus for manufacturing a thin-film transistor, further comprising:
a light source means;
a mask means for forming a light beam emitted from said light source means into a prescribed shape and forming a light path directing the shaped beam in a prescribed direction;
a substrate movement means onto which a substrate including a semiconductor device constituent part rests, movable so as to cause a prescribed location of said semiconductor device constituent part to oppose the light path; and
a control means connected to said substrate movement means, and performing control so that said alignment mark detection means provided in said mask means coincides with said alignment mark provided in said semiconductor device constituent part,
wherein said mask means comprises an alignment mark detection means for detecting an alignment mark provided on said semiconductor device constituent part.
4. An apparatus for manufacturing a thin-film transistor according to claim 1 , wherein said mask means comprises one or more mask patterns for forming one or more formed light beams having a cross-sectional area smaller than a cross-sectional area of a light beam emitted from said light source means.
5. An apparatus for manufacturing a thin-film transistor according to claim 1 , wherein said mask means comprises one or more mask patterns for forming one or more formed light beams having a cross-sectional area smaller than a cross-sectional area of a light beam emitted from said light source.
6. An apparatus for manufacturing a thin-film transistor according to claim 1 , wherein an operation of aligning a desired light path in said mask means with a desired location on said semiconductor device constituent part is performed by referencing an alignment mark provided on said substrate.
7. An apparatus for manufacturing a thin-film transistor according to claim 1 , wherein said alignment mark formed at a desired location on said semiconductor device constituent part is formed simultaneously with another constituent part in a process step in which said semiconductor device is manufactured.