IP Library Granted Patent US 7,267,787
Granted Patent B2
US 7,267,787 · App. 10/912,741 · Granted Sep 11, 2007

Phosphor systems for a white light emitting diode (LED)

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,267,787
App. No.
10/912,741
Granted
Sep 11, 2007
Kind
B2
Abstract

Novel phosphor systems for a white LED are disclosed. The phosphor systems are excited by a non-visible to near-UV radiation source having an excitation wavelength ranging from about 250 to 420 nm. The phosphor system may comprise one phosphor, two phosphors, and may include optionally a third and even a fourth phosphor. In one embodiment of the present invention, the phosphor is a two phosphor system having a blue phosphor and a yellow phosphor, wherein the long wavelength end of the blue phosphor is substantially the same wavelength as the short wavelength end of the yellow phosphor. Alternatively, there may be a wavelength gap between the yellow and blue phosphors. The yellow phosphor may be phosphate or silicate-based, and the blue phosphor may be silicate or aluminate-based. Single phosphor systems excited by non-visible radiation are also disclosed. In other embodiments of present invention, a single phosphor is used to produce white light illumination, the single phosphor having a broad emission spectrum with a peak intensity ranging from about 520 to 560 nm.

Claims (81)

1. A white LED comprising:

a radiation source configured to emit radiation having a wavelength ranging from about 250 to 420 nm;

a yellow phosphor configured to absorb at least a portion of the radiation from the radiation source and emit light with peak intensity in a wavelength ranging from about 530 to 590 nm, wherein the yellow phosphor has the formula A 2 SiO 4 :Eu 2+ F and A is at least one of a divalent metal selected from the group consisting of Sr, Ca, Ba, Mg, Zn, and Cd, and wherein the fluorine dopant substitutes for oxygen; and

a blue phosphor configured to absorb at least a portion of the radiation from the radiation source and emit light with peak intensity in a wavelength ranging from about 470 to 530 nm.

2. The white LED of claim 1 , wherein the radiation source comprises a light emitting diode (LED).

3. The white LED of claim 2 , wherein the radiation source comprises at least one semiconductor layer selected from the group consisting of GaN, ZnSe, and SiC, and at least one active region comprising a p-n junction selected from the group consisting of GaN, AlGaN, InGaN, and InAlGaN.

4. The white LED of claim 1 , wherein the yellow phosphor has the formula Sr 1-x-y Ba x Ca y SiO 4 :Eu +2 F; and where

0≦x≦0.8; and

0≦y≦0.8.

5. The white LED of claim 1 , wherein the yellow phosphor has the formula Sr 1-x-y Ba x Ca y SiO 4 :Eu 2+ F; and where

0≦x≦0.5; and

0≦y≦0.3.

6. The white LED of claim 1 , wherein the yellow phosphor has the formula Sr 1-x-y Ba x Ca y SiO 4 : Eu 2+ F; and where

0.5≦x≦0.7; and

0.2≦y≦0.5.

7. A white LED comprising:

a radiation source configured to emit radiation having a wavelength ranging from about 250 to 420 nm;

a yellow phosphor configured to absorb at least a portion of the radiation from the radiation source and emit light with peak intensity in a wavelength ranging from about 530 to 590 nm; and

a blue phosphor configured to absorb at least a portion of the radiation from the radiation source and emit light with peak intensity in a wavelength ranging from about 470 to 530 nm;

wherein the yellow phosphor has the formula (Sr 1-x-y Eu x Mn y ) 2 P 2+z O 7 ; and where

0.03≦x≦0.08;

0.06≦y≦0.16; and

0<z≦0.05.

8. The white LED of claim 1 , wherein the blue phosphor is selected from the group consisting of silicate-based phosphors and aluminate-based phosphors.

9. The white LED of claim 8 , wherein the blue phosphor has the formula Sr 1-x-y Mg x Ba y SiO 4 :Eu 2+ F; and where

0.5≦x≦1.0; and

0≦y≦1.0.

10. The white LED of claim 8 , wherein the blue phosphor has the formula Sr 1-x MgEu x Al 10 O 17 ; and where

0.2<x≦1.0.

11. The white LED of claim 8 , wherein the blue phosphor has the formula Sr x Al 14 O 25 :Eu +2 , where

x<4;

and where the amount of the Eu is limited to 10 mole percent.

12. A white LED comprising:

a radiation source configured to emit radiation having a wavelength ranging from about 250 to 420 nm;

a yellow phosphor configured to absorb at least a portion of the radiation from the radiation source and emit light with a peak intensity in a wavelength ranging from about 550 to 590 nm; wherein the yellow phosphor has the formula A 2 SiO 4 :Eu 2+ F and A is at least one of a divalent metal selected from the group consisting of Sr, Ca, Ba, Mg, Zn, and Cd, and wherein the fluorine dopant substitutes for oxygen and

a blue phosphor configured to absorb at least a portion of the radiation from the radiation source and emit light with a peak intensity in a wavelength ranging from about 480 to 510 nm.

13. The white LED of claim 12 , wherein the radiation source comprises a light emitting diode (LED).

14. The white LED of claim 13 , wherein the radiation source comprises at least one semiconductor layer selected from the group consisting of GaN, ZnSe, and SiC, and at least one active region comprising a p-n junction selected from the group consisting of GaN, AlGaN, InGaN, and InAlGaN.

15. The white LED of claim 12 , wherein the yellow phosphor has the formula

Sr 1-x-y Ba x Ca y SiO 4 :Eu +2 F; and where

0≦x≦0.08; and

0≦y≦0.8.

16. The white LED of claim 12 , wherein the yellow phosphor has the formula

Sr 1-x-y Ba x Ca y SiO 4 :Eu 2+ F; and where

0≦x≦0.5; and

0≦y≦0.3.

17. The white LED of claim 12 , wherein the yellow phosphor has the formula

Sr 1-x-y Ba x Ca y SiO 4 : Eu 2+ F; and where

0.5≦x≦0.7; and

0.2≦y≦0.5.

18. A white LED comprising:

a radiation source configured to emit radiation having a wavelength ranging from about 250 to 420 nm;

a yellow phosphor configured to absorb at least a portion of the radiation from the radiation source and emit light with peak intensity in a wavelength ranging from about 530 to 590 nm; and

a blue phosphor configured to absorb at least a portion of the radiation from the radiation source and emit light with peak intensity in a wavelength ranging from about 470 to 530 nm;

wherein the yellow phosphor has the formula (S 1-x-y Eu x Mn y ) 2 P 2+z O 7 ; and where

0.03≦x≦0.08;

0.06≦y≦0.16; and

0<z≦0.05.

19. The white LED of claim 12 , wherein the blue phosphor is selected from the group consisting of silicate-based phosphors and aluminate-based phosphors.

20. The white LED claim 19 , wherein the blue phosphor has the formula Sr 1-x-y Mg x Ba y SiO 4 :Eu 2+ F; and where

0.5≦x≦1.0; and

0≦y≦1.0.

21. The white LED of claim 19 , wherein the blue phosphor has the formula Sr 1-x MgEu x Al 10 O 17 ; and where

0.2<x≦1.0.

22. The white LED of claim 19 , wherein the blue phosphor has the formula Sr x Al 14 O 25 :Eu +2 , where

x≦4;

and where the amount of the Eu is limited to 10 mole percent.

23. A white LED having a single phosphor system, the phosphor system comprising:

a radiation source configured to emit radiation having a wavelength ranging from about 250 to 420 nm; and

a phosphor configured to absorb at least a portion of the radiation from the radiation source and emit a broad spectrum light with a peak intensity in a wavelength ranging from about 520 to 560 nm, wherein the yellow phosphor has the formula A 2 SiO 4 :Eu 2+ F and A is at least one of a divalent metal selected from the group consisting of Sr, Ca, Ba, Mg, Zn, and Cd, and wherein the fluorine dopant substitutes for oxygen.

24. The white LED of claim 23 , wherein the radiation source comprises a light emitting diode (LED).

25. The white LED of claim 24 , wherein the radiation source comprises at least one semiconductor layer selected from the group consisting of GaN, ZnSe, and SiC, and at least one active region comprising a p-n junction selected from the group consisting of GaN, AlGaN, InGaN, and InAlGaN.

26. The white LED of claim 23 , wherein the single phosphor has the formula

Sr 1-x-y Ba x Ca y SiO 4 :Eu +2 F; and where

0.3≦x≦0.8; and

0.1≦y≦0.5.

27. A method of producing white light illumination from a two-phosphor system, the method comprising:

providing a radiation source configured to emit radiation having a wavelength ranging from about 250 to 420 nm;

exposing a yellow phosphor to at least a portion of the radiation from the radiation source to produce light having a wavelength ranging from about 530 to 590 nm;

exposing a blue phosphor to at least a portion of the radiation from the radiation source to produce light having a wavelength ranging from about 470 to 530 nm; and

mixing the light from the yellow phosphor with the light from the blue phosphor to produce the white illumination.

Assignments (3)
RELEASE OF SECURITY INTEREST Recorded Apr 14, 2022
From: EAST WEST BANK
To: INTEMATIX HONG KONG CO. LIMITED; INTEMATIX CORPORATION
Reel/Frame 059910/0304 →
SECURITY INTEREST Recorded Oct 27, 2015
From: INTEMATIX HONG KONG CO. LIMITED; INTEMATIX CORPORATION
To: EAST WEST BANK
Reel/Frame 036967/0623 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 3, 2004
From: DONG, YI; WANG, NING; CHENG, XHIFAN; LI, YI-QUN
To: INTEMATIX CORPORATION
Reel/Frame 015425/0266 →