Semiconductor device and method for manufacturing the same
View Patent ↗A gate insulating film on a silicon substrate includes a SiO 2 film and a high-k film. The high-k film contains a transition metal, aluminum, silicon, and oxygen. The concentration of silicon in the high-k film is higher than the concentrations of the transition metal and aluminum in the vicinity of the interface with the SiO 2 film and the vicinity of the interface with the gate electrode. Furthermore, it is preferable that the concentration of silicon is the highest at least in one of the vicinity of the interface with the SiO 2 film or the vicinity of the interface with the gate electrode, gradually decreases with distance from these interfaces, and becomes the lowest in a central part of the high-k film.
1. A semiconductor device comprising:
a gate insulating film on a silicon substrate; and
a gate electrode on said gate insulating film, wherein
said gate insulating film comprises an oxide film containing silicon, and a high-dielectric-constant film on said oxide film containing silicon;
said high-dielectric-constant film is a film containing a transition metal, aluminum, silicon, and oxygen; and
a concentration of the silicon in said high-dielectric-constant film is larger than a concentration of the transition metal and the aluminum in said high-dielectric-constant film proximate an interface with said gate electrode.
2. The semiconductor device according to claim 1 , wherein the concentration of the silicon is largest at at least one of areas proximate the interface with said oxide film containing silicon and proximate the interface with said gate electrode, gradually decreases with distance from these interfaces and becomes smallest at a central part of said high-dielectric-constant film.
3. The semiconductor device according to claim 1 , wherein said oxide film containing silicon is a silicon oxide film.
4. The semiconductor device according to claim 1 , wherein said high-dielectric-constant film is a film consisting of a mixture of an aluminate of the transition metal and a silicate of the transition metal.
5. The semiconductor device according to claim 1 , wherein the transition metal is an element selected from Group IV elements of the periodic table.
6. The semiconductor device according to claim 1 , wherein said high-dielectric-constant film is a HfAlSiO x film.
7. The semiconductor device according to claim 6 , wherein the concentration of Hf, Al, and Si in said HfAlSiO x film is 25.0% to 35.0%, 32.5% to 37.5%, and 32.5% to 37.5%, respectively.
8. The semiconductor device according to claim 1 , wherein said gate electrode is polysilicon.
9. A semiconductor device comprising:
a gate insulating film on a silicon substrate; and
a gate electrode on said gate insulating film, wherein
said gate insulating film is a high-dielectric-constant film containing a transition metal, aluminum, silicon, and oxygen; and
a concentration of the silicon in said gate insulating film is larger than a concentration of the transition metal and the aluminum in said high-dielectric-constant film proximate an interface with said gate electrode.
10. The semiconductor device according to claim 9 , wherein the concentration of the silicon is largest at at least one of areas proximate the interface with said silicon substrate and proximate the interface with said gate electrode, gradually decreases with distance from these interfaces, and becomes smallest at a central part of said high-dielectric-constant film.
11. The semiconductor device according to claim 9 , wherein said high-dielectric-constant film is a film consisting of a mixture of an aluminate of the transition metal and a silicate of the transition metal.
12. The semiconductor device according to claim 9 , wherein the transition metal is an element selected from Group IV elements of the periodic table.
13. The semiconductor device according to claim 9 , wherein said high-dielectric-constant film is a HfAlSiO x film.
14. The semiconductor device according to claim 13 , wherein the concentration of Hf, Al, and Si in said HfAlSiO x film is 25.0% to 35.0%, 32.5% to 37.5%, and 32.5% to 37.5%, respectively.
15. The semiconductor device according to claim 9 , wherein said gate electrode is polysilicon.