Loaded line phase shifter having regions of higher and lower impedance
View Patent ↗An embodiment of the present invention provides a phase shifter, comprising: a base dielectric layer; a tunable dielectric layer overlaying at least a portion of the base dielectric layer; and at least two conductors overlaying at least a portion of the tunable dielectric layer, the at least two conductors positioned so as to form a slot-line topology. In an embodiment of the present invention the slot-line may be between 2 μm and 5 μm wide and the tunable dielectric layer may be between 0.3 μm to 1.5 μm thick. Further, the slot-line topology may be a uniform slot-line topology throughout the length of the at least two conductors and the slot-line topology may have an edge ratio defined by r=L low /(L low +L high ). The edge ratio may be optimized for minimizing metal loss and minimizing dielectric loss for a given phase shifter length. In an embodiment of the present invention the value of r may be between 0.1 and 0.2.
1. A phase shifter, comprising:
a base dielectric layer;
a tunable dielectric layer overlaying at least a portion of said base dielectric layer; and
at least two conductors, with one conductor having higher relative impedance than another conductor having lower impedance, overlaying at least a portion of said tunable dielectric layer, said at least two conductors positioned so as to define a slot-line topology, wherein said slot-line topology has an edge ratio defined by r=L low /(L low +L high ), with L high being the impedance of the conductor with higher relative impedance and L low being the impedance of the conductor with lower impedance.
2. The phase shifter of claim 1 , wherein said slot-line topology is between 2 μm and 5 μm wide.
3. The phase shifter of claim 1 , wherein said tunable dielectric layer is between 0.3 μm to 1.5 μm thick.
4. The phase shifter of claim 1 , wherein said slot-line topology includes at least one substantially square portion with a substantially vertically facing corner connected by a horizontally facing corner via a relatively narrower segment to a horizontally facing corner of at least one additional substantially square shaped portion with a vertically facing corner and in a non-linear manner.
5. The phase shifter of claim 1 , wherein said slot-line topology includes at least one substantially rectangular portion connected via a relatively narrower segment to at least one additional substantially rectangular shaped portion and in a vertical and symmetrical manner.
6. The phase shifter of claim 1 , wherein said edge ratio is optimized for minimizing metal loss of both said at least two conductors and minimizing dielectric loss of said tunable dielectric layer for a given phase shifter length.
7. The phase shifter of claim 1 , wherein r is between 0.1 and 0.2.
8. The phase shifter of claim 1 , wherein said slot-line topology is one which includes at least one hexagonal shaped portion connected via a relatively narrower rectangular linear portion to a at least one additional hexagonal shaped portion and in a linear manner.
9. The phase shifter of claim 1 , wherein said slot-line topology includes at least one substantially rectangular portion connected via a relatively narrower segment to at least one additional substantially rectangular shaped portion and in an orthogonal manner.
10. A phase shifter, comprising:
a base dielectric layer;
a first conductor overlaying at least a portion of said base dielectric layer;
a tunable dielectric layer overlaying at least a portion of said base dielectric layer and a portion of said first conductor; and
a second conductor, with higher relative impedance to said first conductor, overlaying at least a portion of said tunable dielectric layer and a portion of said base dielectric layer, wherein said second conductor overlaying at least a portion of said tunable dielectric layer and a portion of said base dielectric layer defines a slot-line topology and wherein said slot-line topology has an edge ratio defined by r=L low /(L low +L high ), with L high being the impedance of said second conductor with the higher relative impedance and L low being the impedance of said first conductor with lower impedance.
11. The phase shifter of claim 10 , wherein r is between 0.1 and 0.2.
12. The phase shifter of claim 10 , wherein said slot-line topology is one which includes at least one hexagonal shaped portion connected via a relatively narrower linear portion to a at least one additional hexagonal shaped portion and in a linear manner.
13. The phase shifter of claim 10 , wherein said edge ratio is optimized for minimizing metal loss of both said first and second conductors and minimizing dielectric loss of said tunable dielectric layer for a given phase shifter length.
14. The phase shifter of claim 10 , wherein said slot-line topology includes at least one substantially rectangular portion connected via a relatively narrower segment to at least one additional substantially rectangular shaped portion and in an orthogonal manner.
15. The phase shifter of claim 10 , wherein a portion of said tunable dielectric layer that said second conductor overlays, is a portion that includes the portion wherein said tunable dielectric layer overlays said first conductor.
16. The phase shifter of claim 10 , wherein said slot-line is between 2 μm and 5 μm wide.
17. The phase shifter of claim 10 , wherein said tunable dielectric layer is between 0.3 μm to 1.5 μm thick.
18. The phase shifter of claim 10 , wherein said slot-line topology includes at least one substantially rectangular portion connected via a relatively narrower segment to at least one additional substantially rectangular shaped portion and in a vertical and symmetrical manner.
19. The phase shifter of claim 10 , wherein said slot-line topology includes at least one substantially square portion with a substantially vertically facing corner connected by a horizontally facing corner via a relatively narrower segment to a horizontally facing corner of at least one additional substantially square shaped portion with a vertically facing corner and in a non-linear manner.
20. A phase shifter, comprising:
a base dielectric layer;
a tunable dielectric layer overlaying at least a portion of said base dielectric layer; and
at least two conductors overlaying at least a portion of said tunable dielectric layer, said at least two conductors positioned so as to define a slot-line topology; and
wherein said slot-line topology includes at least one substantially rectangular portion connected via a relatively narrower segment to at least one additional substantially rectangular shaped portion and in an orthogonal manner.
21. A phase shifter, comprising:
a base dielectric layer;
a tunable dielectric layer overlaying at least a portion of said base dielectric layer; and
at least two conductors overlaying at least a portion of said tunable dielectric layer, said at least two conductors positioned so as to define a slot-line topology; and
wherein said slot-line topology includes at least one substantially rectangular portion connected via a relatively narrower segment to at least one additional substantially rectangular shaped portion and in a vertical and symmetrical manner.
22. A phase shifter, comprising:
a base dielectric layer;
a tunable dielectric layer overlaying at least a portion of said base dielectric layer; and
at least two conductors overlaying at least a portion of said tunable dielectric layer, said at least two conductors positioned so as to define a slot-line topology; and
wherein said slot-line topology includes at least one substantially square portion with a substantially vertically facing corner connected by a horizontally facing corner via a relatively narrower segment to a horizontally facing corner of at least one additional substantially square shaped portion with a vertically facing corner and in a non-linear manner.
23. A method of tuning a phase shifter, comprising:
applying a voltage across a slot-line topology, said slot-line topology formed from:
a base dielectric layer;
a tunable dielectric layer overlaying at least a portion of said base dielectric layer;
at least two conductors, with one conductor having higher relative impedance than another conductor having lower impedance, overlaying at least a portion of said tunable dielectric layer, said at least two conductors positioned so as to define said slot-line topology and wherein said slot-line topology has an edge ratio defined by r=L low /(L low +L high ), with L high being the impedance of the conductor with the higher relative impedance and L low being the impedance of the conductor with the lower impedance.
24. A method of tuning a phase shifter, comprising:
applying a voltage across a slot-line topology, said slot-line topology formed from:
a base dielectric layer;
a first conductor overlaying at least a portion of said base dielectric layer;
a tunable dielectric layer overlaying at least a portion of said base dielectric layer and a portion of said first conductor;
a second conductor, with higher relative impedance to said first conductor, overlaying at least a portion of said tunable dielectric layer and a portion of said base dielectric layer, wherein said second conductor overlaying at least a portion of said tunable dielectric layer and a portion of said base dielectric layer defines a slot-line topology and wherein said slot-line topology has an edge ratio defined by r=L low /(L low +L high ), with L high being the impedance of said second conductor with the higher relative impedance and L low being the impedance of said conductor with lower impedance.
25. A phase shifter, comprising:
a base dielectric layer;
a tunable dielectric layer overlaying at least a portion of said base dielectric layer; and
at least two conductors overlaying at least a portion of said tunable dielectric layer, said at least two conductors positioned so as to define a slot-line topology; and
wherein said slot-line topology is one which includes at least one hexagonal shaped portion connected via a relatively narrower rectangular linear portion to at least one additional hexagonal shaped portion and in a linear manner.