IP Library Granted Patent US 7,150,195
Granted Patent B2
US 7,150,195 · App. 10/915,485 · Granted Dec 19, 2006

Sealed capacitive sensor for physical measurements

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Quick Facts
Patent No.
US 7,150,195
App. No.
10/915,485
Granted
Dec 19, 2006
Kind
B2
Abstract

A capacitive-type sensor comprises a glass plate having an electrode formed thereon, and a micromachined structure formed from a semiconductor material and having an insulating rim formed thereon. A conducting seal is formed on the insulating rim and arranged to be bonded to the glass substrate to define an enclosed cavity containing the electrode, to thereby define a capacitive element, the conducting seal being arranged, in use, to have an electrical signal passed there through to determine a capacitance thereof which is indicative of the parameter to be determined by the sensor.

Claims (32)

1. A capacitive-type sensor comprising:

a glass structure having an electrode thereon;

a micromachined structure formed from a semiconductor material and having an insulating rim formed thereon; and

a conducting seal formed on the insulating rim and arranged to be bonded to the glass structure to define an enclosed cavity containing the electrode, to thereby define a capacitive element, the conducting seal being arranged to have an electrical signal passed there through to determine a capacitance thereof which is indicative of a parameter to be determined by the sensor, wherein the conducting seal surrounds the cavity.

2. The sensor according to claim 1 , wherein the micromachined structure includes a diaphragm.

3. The sensor according to claim 2 , wherein an electrical connector is provided to the diaphragm.

4. The sensor according to claim 3 , wherein the electrical connector for the diaphragm is provided by the semiconductor material.

5. The sensor according to claim 2 , wherein the diaphragm includes a stiff center boss.

6. The capacitive sensor of claim 2 , wherein the conducting seal surrounds the diaphragm.

7. The sensor according to claim 1 , wherein the semiconductor material is silicon.

8. The sensor according to claim 1 , wherein the semiconductor material comprises a rigid support rim.

9. The sensor according to claim 1 , wherein the conducting seal between the glass structure and the semiconductor material is provided by anodic bonding.

10. The sensor according to claim 1 , wherein additional press contacts are provided external to the enclosed cavity to allow for interaction with other devices.

11. The sensor according to claim 1 , wherein the electrode is shaped such that, during manufacture of the sensor, a size of the electrode is adjustable to control the capacitance of the electrode.

12. The sensor according to claim 1 , wherein the sensor is arranged to be a pressure sensor.

13. The sensor according to claim 1 , wherein the sensor is arranged to be an accelerometer.

14. The sensor according to claim 1 , wherein the conducting seal is electrically connected to the electrode on the glass structure.

15. The sensor according to claim 1 , wherein the conducting seal is connected to an electrical bond pad outside the enclosed cavity.

16. A capacitive sensor comprising:

a glass structure having an electrode thereon;

a micromachined structure formed from a semiconductor material;

an insulating rim formed on the micromachined structure; and

a conductive seal ring formed on the insulating rim that bonds the glass structure such that it defines an enclosed cavity containing the electrode, thereby defining a capacitive element;

wherein an electrical signal passes through the conducting seal to determine a capacitance of the seal ring, and wherein the capacitance is indicative of a parameter to be determined by the sensor, and

wherein the conductive seal ring surrounds the cavity.

17. The sensor according to claim 16 , wherein the micromachined structure includes a diaphragm, and the conductive seal ring surrounds the diaphragm.

18. A capacitive sensor comprising:

a glass structure having an electrode thereon;

a micromachined structure formed from a semiconductor material and including a diaphragm;

an insulating rim formed on the micromachined structure; and

a conductive seal ring formed on the insulating rim that bonds the glass structure such that it defines an enclosed cavity containing the electrode, thereby defining a capacitive element,

wherein an electrical signal passes through the conducting seal to determine a capacitance of the seal ring, the capacitance is indicative of a parameter to be determined by the sensor, and the conductive seal ring surrounds the diaphragm.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 14, 2011
From: INFINEON TECHNOLOGIES SENSONOR AS
To: INFINEON TECHNOLOGIES AG
Reel/Frame 025637/0932 →
CORRECTIVE ASSIGNMENT TO CORRECT THE CORRECTIVE ASSIGNMENT TO RE-RECORD ASSIGNMENT PREVIOUSLY RECORDED UNDER PREVIOUSLY RECORDED ON REEL 017278 FRAME 0398. ASSIGNOR(S) HEREBY CONFIRMS THE INFINEON TECHNOLOGIES SENSONOR AS. Recorded Mar 17, 2006
From: SENSONOR AS
To: INFINEON TECHNOLOGIES SENSONOR AS
Reel/Frame 017320/0857 →
CHANGE OF NAME Recorded Mar 9, 2006
From: SENSONOR ASA
To: INFINEON TECHNOLOGIES SENSOROR AS
Reel/Frame 017278/0398 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 11, 2004
From: JAKOBSEN, HENRIK; KVISTEROY, TERJE
To: SENSONOR ASA
Reel/Frame 015683/0730 →