PN diode optical modulators fabricated in rib waveguides
View Patent ↗High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.
1. An optoelectronic device on a substrate comprising a rib waveguide and a lateral PN diode,
where the rib waveguide comprises:
a slab of monocrystalline silicon formed on the substrate, and
a rib formed on the slab of monocrystalline silicon;
the lateral PN diode comprises:
first and second doped regions formed in the slab of monocrystalline silicon, where the second doped region is oppositely charged to the first doped region and first and second electrical contacts formed in the respective first and second doped regions in the slab of monocrystalline silicon,
where a PN junction is formed at the boundary of the first and second doped regions, a depletion region at the PN junction is substantially in the center of a guided optical mode propagating through the rib waveguide; and,
wherein a circuit is coupled to the first and second electrical contacts of the PN diode wherein the circuit comprises a transistor formed from the slab of monocrystalline silicon.
2. The optoelectronic device of claim 1 , wherein the size of the depletion region in the PN diode may be changed by varying an applied reverse bias voltage.
3. The optoelectronic device of claim 2 , wherein changing the size of the depletion region changes the effective index of refraction of the rib waveguide.
4. The optoelectronic device of claim 3 , wherein changing the effective index of refraction of the rib waveguide causes a phase shift in a guided optical wave propagating through the rib waveguide.
5. The optoelectronic device of claim 2 , wherein changing the size of the depletion region changes the absorption of a guided optical wave propagating through the rib waveguide.
6. The optoelectronic device of claim 1 , and further comprising using the optoelectronic device in an optical processing system.
7. The optoelectronic device of claim 6 , wherein the optical processing system is selected from a group comprising: an arrayed waveguide grating (AWG), an optical switch, a laser cavity, a ring resonator based add/drop filter, a Fabry-Perot (FP) cavity based add/drop filter, an MZI based filter, a ring resonator based filter, FP cavity based filter, a periodically perturbed waveguide, a corrugated waveguide, a multi-mode-interference (MMI) splitter/combiner, Y-junction and directional coupler.
8. The optoelectronic device of claim 1 , wherein each of the first and second electrical contacts is comprised of an ohmic contact.
9. The optoelectronic device of claim 1 , and further comprising at least one conductive plug coupling each of the first and second electrical contacts to at least one of a plurality of metal layers of an integrated circuit.
10. The optoelectronic device of claim 1 , and further comprising at least one local interconnect for coupling an electrical contact on the slab of semiconductor with an electrical contact on a device formed on the substrate.
11. The optoelectronic device of claim 1 , wherein the circuit comprises a device selected from the group comprising: a CMOS transistor, a BiCMOS transistor, a bipolar junction transistor (BJT), a junction FET (JFET) transistor, a diode, a resistor, a capacitor and an inductor.
12. The optoelectronic device of claim 1 , wherein the propagation properties of a guided optical wave in the rib waveguide may be modulated by varying an applied reverse bias voltage.
13. The optoelectronic device of claim 1 , and further comprising the longitudinal propagation of a guided optical wave through substantially the central section of the rib waveguide,
where the central section of the rib waveguide guides the substantial majority of the power of the optical wave propagating down the rib waveguide and
where the first and second electrical contacts are formed not in proximity to the guided optical mode propagating in substantially the central section of the rib waveguide.
14. The optoelectronic device of claim 1 , and further comprising using the optoelectronic device in an integrated optical modulation system selected from a group comprising: a Mach-Zehnder Interferometer, a ring modulator and a Fabry-Perot cavity.
15. The optoelectronic device of claim 1 , wherein the silicon of the rib waveguide and the silicon body of the transistor are formed at the same time from the same silicon.
16. The optoelectronic device of claim 1 , wherein the substrate is selected from a group comprised of:
a substrate comprising:
a layer of silicon dioxide disposed on a layer of monocrystalline silicon,
a layer of sapphire and,
an air filled cavity;
a double silicon on insulator (double SOI) substrate comprising:
a first layer comprised of monocrystalline silicon,
a second layer comprised of silicon dioxide disposed on the first layer,
a third layer comprised of monocrystalline silicon disposed on the second layer, and
a fourth layer comprised of silicon dioxide disposed on the third layer,
a fifth layer comprised of silicon;
a silicon on sapphire (SOS) substrate, and
a silicon on insulator (SOI) substrate.
17. The optoelectronic device of claim 1 wherein the circuit comprises a reverse bias voltage source.
18. The optoelectronic device of claim 1 wherein the circuit couples a reverse bias voltage source to the PN diode.