Method of manufacturing a semiconductor integrated circuit device
View Patent ↗A method of manufacturing a semiconductor integrated circuit device comprising forming a silicon oxide film as thin as 5 nm or less on the surfaces of p type wells and n type wells by wet oxidizing a substrate, heating the substrate in an atmosphere containing about 5% of an NO gas to introduce nitrogen into the silicon oxide film so as to form a silicon oxynitride film, exposing the substrate to a nitrogen plasma atmosphere to further introduce nitrogen into the silicon oxynitride film in order to form a silicon oxynitride gate insulating film having a first peak concentration near the interface with the substrate and a second peak concentration near the surface thereof. Thereby, the concentration of nitrogen in the gate insulating film is increased without raising the concentration of nitrogen near the interface between the substrate and the gate insulating film to a higher level than required.
1. A method of manufacturing a semiconductor integrated circuit device having a p-type MISFET, comprising the steps of:
(a) forming a silicon oxide film, for a gate insulating film of said p-type MISFET, on a main surface of a semiconductor substrate made of monocrystalline silicon, by heating the semiconductor substrate;
(b) introducing nitrogen into the silicon oxide film by heating the semiconductor substrate in an atmosphere containing an NO gas or N 2 O gas;
(c) after step (b), introducing nitrogen into the silicon oxide film by exposing the semiconductor substrate to a nitrogen plasma atmosphere; and
(d) forming a gate electrode of said p-type MISFET, doped with a p-type impurity, over the main surface after the steps (b) and (c); and
(e) forming p-type semiconductor areas for source and drain regions of said p-type MISFET, in said semiconductor substrate,
such that, in the semiconductor integrated circuit device formed, the nitrogen introduced into the silicon oxide film has a first peak concentration near the interface between the semiconductor substrate and the gate insulating film and a second peak concentration near the surface of the gate insulating film, and the second peak concentration of nitrogen is made higher than 10 atomic %.
2. A method of manufacturing a semiconductor integrated circuit device according to claim 1 , wherein the first peak concentration of nitrogen is in the range of 1 to 10 atomic %.
3. A method of manufacturing a semiconductor integrated circuit device according to claim 1 , wherein the gate insulating film has a thickness of 5 nm or less.
4. A method of manufacturing a semiconductor integrated circuit device according to claim 1 , wherein the gate electrode contains a silicon film doped with boron.
5. A method of manufacturing a semiconductor integrated circuit device according to claim 1 , wherein the introduction of nitrogen by exposing the semiconductor substrate to a nitrogen plasma atmosphere is carried out at a temperature of 600° C. or less.
6. A method of manufacturing a semiconductor integrated circuit device according to claim 5 , wherein during the introduction of nitrogen by exposing the semiconductor substrate to a nitrogen plasma atmosphere, the semiconductor substrate is heated at a temperature of at least 200° C.
7. A method of manufacturing a semiconductor integrated circuit device according to claim 1 , wherein during the introduction of nitrogen by exposing the semiconductor substrate to a nitrogen plasma atmosphere, the semiconductor substrate is heated at a temperature of at least 200° C.
8. A method of manufacturing a semiconductor integrated circuit device having a p-type MISFET, comprising the steps of:
(a) forming a gate insulating film of the p-type MISFET over a semiconductor substrate, and the gate insulating film is formed of a silicon oxide film,
(b) heating the gate insulating film in an atmosphere containing an NO gas or N 2 O gas;
(c) after step (b), introducing nitrogen radicals to the gate insulating film by a nitrogen plasma treatment;
(d) after the steps (b) and (c), forming a gate electrode of the p-type MISFET, doped with boron, over the gate insulating film; and
(e) after the step (d), forming p-type semiconductor areas for source and drain regions of the p-type MISFET in the semiconductor substrate,
such that, in the semiconductor integrated circuit device formed, the gate insulating film has a first peak concentration of nitrogen near the interface between the semiconductor substrate and the gate insulating film and a second peak concentration of nitrogen near the interface between the gate insulating film and the gate electrode.
9. A method of manufacturing a semiconductor integrated circuit device according to claim 8 , wherein the second peak concentration is higher than the first peak concentration.
10. A method of manufacturing a semiconductor integrated circuit device according to claim 8 , wherein the second peek concentration is made higher than 10 atomic %.
11. A method of manufacturing a semiconductor integrated circuit device according to claim 8 , wherein the first peak concentration of the nitrogen is in the range of 1 to 10 atomic %.
12. A method of manufacturing a semiconductor integrated circuit device according to claim 8 , wherein the step (c) is carried out while the semiconductor substrate is heated at 200 to 600° C.
13. A method of manufacturing a semiconductor Integrated circuit device according to claim 8 , wherein the gate insulating film has a thickness of 5 nm or less.
14. A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:
(a) forming an n-type well in a semiconductor substrate;
(b) forming a silicon oxide film over the n-type well;
(c) heating the silicon oxide film in an atmosphere containing an NO gas or N 2 O gas;
(d) after step (c), introducing nitrogen radicals to the silicon oxide film by a nitrogen plasma treatment;
(e) after the steps (c) and (d), forming a polycrystal silicon film doped with a p-type impurity over the silicon oxide film; and
(f) after the step (e), forming p-type semiconductor areas in the n-type well,
such that, in the semiconductor integrated circuit device formed, the silicon oxide film has a first peak concentration of nitrogen near the interface between the n-type well and the silicon oxide film and a second peak concentration of nitrogen near the interface between the polycrystal silicon film and the silicon oxide film.
15. A method of manufacturing a semiconductor integrated circuit device according to claim 14 , wherein the second peak concentration is higher than the first peak concentration.
16. A method of manufacturing a semiconductor integrated circuit device according to claim 14 , wherein the second peak concentration is made higher than 10 atomic %.
17. A method of manufacturing a semiconductor integrated circuit device according to claim 14 , wherein the first peak concentration of the nitrogen is in the range of 1 to 10 atomic %.
18. A method of manufacturing a semiconductor integrated circuit device according to claim 14 , wherein the step (d) is carried out while the semiconductor substrate is heated at 200 to 600° C.
19. A method of manufacturing a semiconductor integrated circuit device according to claim 14 , wherein the silicon oxide film has a thickness of 5 nm or less.